Simulation and Experimental Verification of Organic Field Effect Transistor Characteristic Based on Finite Element Method

2016 ◽  
Vol 37 (10) ◽  
pp. 1245-1252
Author(s):  
王倩 WANG Qian ◽  
吴仁磊 WU Ren-lei ◽  
吴峰 WU Feng ◽  
程晓曼 CHENG Xiao-man
Nanoscale ◽  
2015 ◽  
Vol 7 (43) ◽  
pp. 18188-18197 ◽  
Author(s):  
Sebastian Heedt ◽  
Isabel Otto ◽  
Kamil Sladek ◽  
Hilde Hardtdegen ◽  
Jürgen Schubert ◽  
...  

The profound impact of InAs nanowire surface states on transistor functionality is quantified using a novel dual-gate FET evaluation method in conjunction with finite element method simulations of nanowire electrostatics.


ACS Photonics ◽  
2021 ◽  
Author(s):  
Haripriya Kesavan ◽  
Subhamoy Sahoo ◽  
Sanjoy Jena ◽  
Jayeeta Bhattacharyya ◽  
Debdutta Ray

Author(s):  
Raka Ahmed ◽  
Arun Manna

Air-stable perylenediimide (PDI) and its derivatives, in particularly the cyano-functionalized ones have attracted great research attention for their potential use in flexible optoelectronics, organic field-effect-transistor (OFET) as n-type transport materials...


2006 ◽  
Vol 88 (12) ◽  
pp. 121907 ◽  
Author(s):  
Chong-an Di ◽  
Gui Yu ◽  
Yunqi Liu ◽  
Xinjun Xu ◽  
Yabin Song ◽  
...  

2016 ◽  
Vol 52 (11) ◽  
pp. 2370-2373 ◽  
Author(s):  
Jian Deng ◽  
Yuanxiang Xu ◽  
Liqun Liu ◽  
Cunfang Feng ◽  
Jia Tang ◽  
...  

Ambipolar OFETs based on AIE-active materials were demonstrated to have a high and balanced mobility level of 2.0 cm2 V−1 s−1.


2015 ◽  
Vol E98.C (2) ◽  
pp. 98-103 ◽  
Author(s):  
Masahiro MINAGAWA ◽  
Hidetsugu TAMURA ◽  
Ryo SAKIKAWA ◽  
Itsuki IKARASHI ◽  
Akira BABA ◽  
...  

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