Excitation Mechanism of Eu3+ Photoluminescence from Eu Doped Silicon Oxycarbide Film

2017 ◽  
Vol 38 (8) ◽  
pp. 1010-1014
Author(s):  
王岩 WANG Yan ◽  
林圳旭 LIN Zhen-xu ◽  
宋捷 SONG Jie ◽  
张文星 ZHANG Wen-xing ◽  
王怀佩 WANG Huai-pei ◽  
...  
Keyword(s):  
Silicon Oxycarbide ◽  
Excitation Mechanism ◽  
Doped Silicon

Synthesis and luminescent properties of novel Eu2+-doped silicon oxycarbide glasses

2004 ◽  
Vol 24 (4) ◽  
pp. 601-605 ◽  
Author(s):  
Yujun Zhang ◽  
Alberto Quaranta ◽  
Gian Domenico Soraru
Keyword(s):  
Luminescent Properties ◽  
Silicon Oxycarbide ◽  
Doped Silicon ◽  
Silicon Oxycarbide Glasses

Dense nanosized europium silicate clusters induced light emission enhancement in Eu-doped silicon oxycarbide films

2017 ◽  
Vol 694 ◽  
pp. 946-951 ◽  
Author(s):  
Zhenxu Lin ◽  
Rui Huang ◽  
Huaipei Wang ◽  
Yan Wang ◽  
Yi Zhang ◽  
...  
Keyword(s):  
Light Emission ◽  
Silicon Oxycarbide ◽  
Emission Enhancement ◽  
Doped Silicon

Enhanced electromagnetic wave absorption of Fe‐doped silicon oxycarbide nanocomposites

2019 ◽  
Vol 103 (3) ◽  
pp. 1732-1743 ◽  
Author(s):  
Bin Du ◽  
Junjie Qian ◽  
Ping Hu ◽  
Chao He ◽  
Mei Cai ◽  
...  
Keyword(s):  
Electromagnetic Wave ◽  
Silicon Oxycarbide ◽  
Electromagnetic Wave Absorption ◽  
Wave Absorption ◽  
Doped Silicon

Preparation of low leakage current fluorine-doped silicon-oxycarbide by PECVD

2008 ◽  
Vol 69 (2-3) ◽  
pp. 742-746
Author(s):  
C.C. Huang ◽  
J.L. Huang ◽  
Y.L. Wang ◽  
Y.D. Juang ◽  
Y.S. Ho ◽  
...  
Keyword(s):  
Leakage Current ◽  
Silicon Oxycarbide ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Doped Silicon

The Structure and Composition of Doped Silicon Oxycarbide Microcrystalline Layers Produced by Spatial Separation Techniques

1994 ◽  
Vol 358 ◽  
Author(s):  
R. Martins ◽  
M. Vieira ◽  
I. Ferreira ◽  
E. Fortunato
Keyword(s):  
Experimental Data ◽  
Spatial Separation ◽  
Wide Band ◽  
Silicon Oxycarbide ◽  
Preparation Process ◽  
Microcrystalline Silicon ◽  
Wide Band Gap ◽  
Doped Silicon ◽  
System 1

ABSTRACTThis work presents experimental data concerning the role of the oxygen partial pressure used during the preparation process, on the structure, composition and optoelectronic properties of wide band gap doped microcrystalline silicon oxycarbide films produced by a TCDDC system [1].

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