Effective threshold voltage control in GaN nanowire field-effect transistors with a dual-gate structure

Journal of the Korean Physical Society ◽

10.3938/jkps.61.2100 ◽

2012 ◽

Vol 61 (12) ◽

pp. 2100-2103

Author(s):

Hyo-Suk Kim ◽

J. -R. Kim ◽

Ju-Jin Kim ◽

Jeong-O. Lee

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Voltage Control ◽

Effective Threshold ◽

Gate Structure ◽

Dual Gate ◽

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Threshold-voltage control and enhancement-mode characteristics in multilayer tin disulfide field-effect transistors by gate-oxide passivation with an alkylphosphonic acid self-assembled monolayer

Journal of Applied Physics ◽

10.1063/1.4914488 ◽

2015 ◽

Vol 117 (10) ◽

pp. 104509 ◽

Author(s):

Ute Zschieschang ◽

Tanja Holzmann ◽

Alexander Kuhn ◽

Mahdieh Aghamohammadi ◽

Bettina V. Lotsch ◽

...

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Voltage Control ◽

Self Assembled Monolayer ◽

Enhancement Mode ◽

Tin Disulfide ◽

Mode Characteristics ◽

Alkylphosphonic Acid

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Threshold voltage control of copper phthalocyanine based organic field-effect transistors with a poly (N-vinylcarbazole) buffer layer

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ◽

10.1109/icsict.2010.5667637 ◽

2010 ◽

Author(s):

Ying Wang ◽

Yunqi Liu ◽

Yabin Song ◽

Chong-an Di ◽

Yanming Sun ◽

...

Keyword(s):

Buffer Layer ◽

Threshold Voltage ◽

Field Effect ◽

Copper Phthalocyanine ◽

Field Effect Transistors ◽

Voltage Control ◽

Organic Field Effect Transistors

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Threshold voltage control of InAlN/GaN heterostructure field-effect transistors for depletion- and enhancement-mode operation

Applied Physics Letters ◽

10.1063/1.3446891 ◽

2010 ◽

Vol 96 (24) ◽

pp. 243506 ◽

Author(s):

Suk Choi ◽

Hee Jin Kim ◽

Zachary Lochner ◽

Yun Zhang ◽

Yi-Che Lee ◽

...

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Voltage Control ◽

Enhancement Mode ◽

Mode Operation ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Modulation Doping for Threshold Voltage Control in Organic Field-Effect Transistors

ACS Applied Materials & Interfaces ◽

10.1021/acsami.0c22224 ◽

2021 ◽

Vol 13 (7) ◽

pp. 8664-8671

Author(s):

Ilia Lashkov ◽

Kevin Krechan ◽

Katrin Ortstein ◽

Felix Talnack ◽

Shu-Jen Wang ◽

...

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Voltage Control ◽

Organic Field Effect Transistors ◽

Modulation Doping

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Polycrystalline silicon/metal stacked gate for threshold voltage control in metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.126218 ◽

2000 ◽

Vol 76 (14) ◽

pp. 1938-1940 ◽

Author(s):

Igor Polishchuk ◽

Chenming Hu

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Voltage Control ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Threshold voltage control of Pt-Ti-O gate Si-metal-insulator semiconductor field-effect transistors hydrogen gas sensors by using oxygen invasion into Ti layers

Journal of Applied Physics ◽

10.1063/1.3645028 ◽

2011 ◽

Vol 110 (7) ◽

pp. 074515 ◽

Author(s):

Toshiyuki Usagawa ◽

Yota Kikuchi

Keyword(s):

Gas Sensors ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Voltage Control ◽

Hydrogen Gas ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Hydrogen Gas Sensors

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Threshold Voltage Control in Organic Field-Effect Transistors by Surface Doping with a Fluorinated Alkylsilane

ACS Applied Materials & Interfaces ◽

10.1021/acsami.8b12346 ◽

2018 ◽

Vol 11 (2) ◽

pp. 2177-2188 ◽

Author(s):

Jakob Zessin ◽

Zheng Xu ◽

Nara Shin ◽

Mike Hambsch ◽

Stefan C. B. Mannsfeld

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Voltage Control ◽

Organic Field Effect Transistors ◽

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Study on Threshold Voltage Control of Tunnel Field-Effect Transistors Using VT-Control Doping Region

IEICE Transactions on Electronics ◽

10.1587/transele.e95.c.820 ◽

2012 ◽

Vol E95.C (5) ◽

pp. 820-825 ◽

Author(s):

Hyungjin KIM ◽

Min-Chul SUN ◽

Hyun Woo KIM ◽

Sang Wan KIM ◽

Garam KIM ◽

...

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Voltage Control

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Field-Effect Transistors: Threshold Voltage Control of Multilayered MoS2 Field-Effect Transistors via Octadecyltrichlorosilane and their Applications to Active Matrixed Quantum Dot Displays Driven by Enhancement-Mode Logic Gates (Small 7/2019)

Small ◽

10.1002/smll.201970037 ◽

2019 ◽

Vol 15 (7) ◽

pp. 1970037

Author(s):

Jeongkyun Roh ◽

Jae Hyeon Ryu ◽

Geun Woo Baek ◽

Heeyoung Jung ◽

Seung Gi Seo ◽

...

Keyword(s):

Quantum Dot ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Voltage Control ◽

Logic Gates ◽

Enhancement Mode

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Mesoscopic transport in Si metal‐oxide‐semiconductor field‐effect transistors with a dual‐gate structure

Journal of Applied Physics ◽

10.1063/1.357159 ◽

1994 ◽

Vol 76 (9) ◽

pp. 5561-5566 ◽

Author(s):

Hideyuki Matsuoka ◽

Tsuneo Ichiguchi ◽

Toshiyuki Yoshimura ◽

Eiji Takeda

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Mesoscopic Transport ◽

Gate Structure ◽

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