scholarly journals Field-Effect Transistors: Threshold Voltage Control of Multilayered MoS2 Field-Effect Transistors via Octadecyltrichlorosilane and their Applications to Active Matrixed Quantum Dot Displays Driven by Enhancement-Mode Logic Gates (Small 7/2019)

Small ◽  
2019 ◽  
Vol 15 (7) ◽  
pp. 1970037
Author(s):  
Jeongkyun Roh ◽  
Jae Hyeon Ryu ◽  
Geun Woo Baek ◽  
Heeyoung Jung ◽  
Seung Gi Seo ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Voltage Control ◽  
Logic Gates ◽  
Enhancement Mode

Simulation of Stacked Quantum Dot Channels SWS-FET Using Multi-FET ABM Modeling

2019 ◽  
Vol 28 (03n04) ◽  
pp. 1940025
Author(s):  
H. Salama ◽  
B. Saman ◽  
R. H. Gudlavalleti ◽  
P-Y. Chan ◽  
R. Mays ◽  
...  
Keyword(s):  
Experimental Data ◽  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Simulation Models ◽  
Logic Gates ◽  
Behavior Model ◽  
Analog Behavior

This paper presents simulation of spatial wavefunction switched (SWS) field-effect transistors (FETs) comprising of two vertically stacked quantum dot channels. An analog behavior model (ABM) was used to compare the experimental I-V characteristics of a fabricated QD-SWS-FET. Each channel consists of two quantum dot layers and are connected to the dedicated drains D2 and D1, respectively. The fabricated SWS-FET has one source and one gate. The ABM simulation models SWS-FET comprising of two independent conventional BSIM FETs with their (W/L) ratios, capacitances and other device parameters. The agreement in simulation and experimental data will advance modeling of SWS based adders, logic gates and SRAMs.

Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment

2019 ◽  
Vol 7 (29) ◽  
pp. 8855-8860 ◽  
Author(s):  
Janghyuk Kim ◽  
Marko J. Tadjer ◽  
Michael A. Mastro ◽  
Jihyun Kim
Keyword(s):  
Plasma Treatment ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Double Gate ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Enhancement Mode ◽  
Mode Operation

The threshold voltage of β-Ga2O3 metal–insulator–semiconductor field-effect transistors is controlled via remote fluorine plasma treatment, enabling an enhancement-mode operation under double gate condition.

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