Threshold voltage control of InAlN/GaN heterostructure field-effect transistors for depletion- and enhancement-mode operation

2010 ◽  
Vol 96 (24) ◽  
pp. 243506 ◽  
Author(s):  
Suk Choi ◽  
Hee Jin Kim ◽  
Zachary Lochner ◽  
Yun Zhang ◽  
Yi-Che Lee ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Voltage Control ◽  
Enhancement Mode ◽  
Mode Operation ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment

2019 ◽  
Vol 7 (29) ◽  
pp. 8855-8860 ◽  
Author(s):  
Janghyuk Kim ◽  
Marko J. Tadjer ◽  
Michael A. Mastro ◽  
Jihyun Kim
Keyword(s):  
Plasma Treatment ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Double Gate ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Enhancement Mode ◽  
Mode Operation

The threshold voltage of β-Ga2O3 metal–insulator–semiconductor field-effect transistors is controlled via remote fluorine plasma treatment, enabling an enhancement-mode operation under double gate condition.

scholarly journals Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors

2018 ◽  
Vol 123 (2) ◽  
pp. 024902 ◽  
Author(s):  
Fengzai Tang ◽  
Kean B. Lee ◽  
Ivor Guiney ◽  
Martin Frentrup ◽  
Jonathan S. Barnard ◽  
...  
Keyword(s):  
Chemical Analysis ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Enhancement Mode ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

Control of Threshold Voltage of Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors Using p-GaN Gate Contact

2007 ◽  
Vol 46 (1) ◽  
pp. 115-118 ◽  
Author(s):  
Takahiro Fujii ◽  
Norio Tsuyukuchi ◽  
Yoshikazu Hirose ◽  
Motoaki Iwaya ◽  
Satoshi Kamiyama ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Enhancement Mode ◽  
Heterostructure Field Effect Transistors
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