A study on the high temperature-dependence of the electrical properties in a solution-deposited zinc-tin-oxide thin-film transistor operated in the saturation region

2016 ◽  
Vol 68 (12) ◽  
pp. 1375-1380
Author(s):  
Kyeong Min Yu ◽  
Byung Seong Bae ◽  
Myunghee Jung ◽  
Eui-Jung Yun
2020 ◽  
Vol 20 (3) ◽  
pp. 1704-1708
Author(s):  
Wei Lun Huang ◽  
Chen-Chuan Yang ◽  
Sheng-Po Chang ◽  
Shoou-Jinn Chang

In this study, the optical and electrical properties of a zinc tin oxide (ZTO) thin-film transistor (TFT) were investigated. The TFT was fabricated using ZTO as the active layer, which was deposited by a radio frequency magnetron sputtering system, to form an ultraviolet (UV) photodetector. The device has a threshold voltage of 0.48 V, field-effect mobility of 1.47 cm2/Vs in the saturation region, on/off drain current ratio of 2×106, and subthreshold swing of 0.45 V/decade in a dark environment. Moreover, as a UV photodetector, the device has a long photoresponse time, responsivity of 0.329 A/W, and rejection ratio of 3.19×104 at a gate voltage of -15 V under illumination of wavelength 300 nm.


2011 ◽  
Vol 50 (7R) ◽  
pp. 070201 ◽  
Author(s):  
Jee Ho Park ◽  
Won Jin Choi ◽  
Jin Young Oh ◽  
Soo Sang Chae ◽  
Woo Soon Jang ◽  
...  

Langmuir ◽  
2009 ◽  
Vol 25 (18) ◽  
pp. 11149-11154 ◽  
Author(s):  
Dongjo Kim ◽  
Youngmin Jeong ◽  
Keunkyu Song ◽  
Seong-Kee Park ◽  
Guozhong Cao ◽  
...  

2015 ◽  
Vol 4 (12) ◽  
pp. Q59-Q62 ◽  
Author(s):  
L.-C. Liu ◽  
J.-S. Chen ◽  
J.-S. Jeng

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