Effect of a rapid thermal annealing process on the electrical properties of an aluminum-doped indium zinc tin oxide thin film transistor
2016 ◽
Vol 214
(1)
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pp. 1600490
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2010 ◽
Vol 31
(8)
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pp. 836-838
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2000 ◽
Vol 39
(Part 1, No. 10)
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pp. 5773-5775
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2004 ◽
Vol 17
(1)
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pp. 7-15
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2014 ◽
Vol 35
(11)
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pp. 1103-1105
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