Preparation of Nanorod Structure of TiO2 by the Use of Photoelectrochemical Etching Technique

AbstractPhotoelectrochemical (PEC) etching technique has been proven to be an effective method to etch GaN. Despite its success, investigations on etching-induced damage are still scare. In this work, the damage induced by PEC etching of GaN in KOH electrolyte was studied. Photoluminescence (PL) spectroscopy was used to explore the origin of etching-induced damaged layer. From the variable temperature PL measurements, the origin of etching-induced damage was attributed to be the defect complex of VGa-ON (gallium vacancy bonds to oxygeon on nitrogen antisite). With determination of the defect origin, the electronic transition in the etch damage-related yellow luminescence (YL) band was suggested to be deep donor-like state to shallow-acceptor transition. In addition, a post-treatment method with boiled KOH chemical etching was developed to remove the thin damaged layer. In this method, crystallographic etching characteristics of boiled KOH was observed to assist in the formation of smooth sidewall facets. As revealed by the reduction of yellow luminescence, we propose this novel technique as a near damage-free etching method.

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A damage-reduced process revealed by photoluminescence in photoelectrochemical etching GaN

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300005202 ◽

2000 ◽

Vol 5 (S1) ◽

pp. 873-879 ◽

Cited By ~ 1

Author(s):

J. M. Hwang ◽

J. T. Hsieh ◽

H. L. Hwang ◽

W. H. Hung

Keyword(s):

Chemical Etching ◽

Variable Temperature ◽

Treatment Method ◽

Yellow Luminescence ◽

Etching Technique ◽

Photoelectrochemical Etching ◽

Shallow Acceptor ◽

Novel Technique ◽

Deep Donor

Photoelectrochemical (PEC) etching technique has been proven to be an effective method to etch GaN. Despite its success, investigations on etching-induced damage are still scare. In this work, the damage induced by PEC etching of GaN in KOH electrolyte was studied. Photoluminescence (PL) spectroscopy was used to explore the origin of etching-induced damaged layer. From the variable temperature PL measurements, the origin of etching-induced damage was attributed to be the defect complex of VGa-ON (gallium vacancy bonds to oxygeon on nitrogen antisite). With determination of the defect origin, the electronic transition in the etch damage-related yellow luminescence (YL) band was suggested to be deep donor-like state to shallow-acceptor transition. In addition, a post-treatment method with boiled KOH chemical etching was developed to remove the thin damaged layer. In this method, crystallographic etching characteristics of boiled KOH was observed to assist in the formation of smooth sidewall facets. As revealed by the reduction of yellow luminescence, we propose this novel technique as a near damage-free etching method.

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Single-Crystal SiC Resonators by Photoelectrochemical Etching

Materials Science Forum ◽

10.4028/www.scientific.net/msf.717-720.529 ◽

2012 ◽

Vol 717-720 ◽

pp. 529-532 ◽

Cited By ~ 6

Author(s):

Mohammad M. Islam ◽

Chih Fang Huang ◽

Feng Zhao

Keyword(s):

Single Crystal ◽

Room Temperature ◽

Chemical Properties ◽

Etching Technique ◽

Scanning Method ◽

Photoelectrochemical Etching ◽

Resonant Structures ◽

Single Crystal Sic ◽

Dynamic Scanning ◽

And Chemical Properties

In this paper, we report single-crystal 4H-SiC resonant structures fabricated by dopant-selective photoelectrochemical etching. The frequency response of the resonant beams was characterized by a dynamic scanning method using AFM with the beams excited by a piezoelectric actuator under atmosphere pressure and room temperature. The beam with a length of 35 μm shows mechanical resonance at 945 kHz. The Young’s modulus of single-crystal SiC was derived from the measured resonant frequency. Single-crystal 4H-SiC resonators developed in this study fully exploit the excellent electrical, mechanical, and chemical properties of SiC, while dopant-selective photoelectrochemical etching technique significantly simplifies the fabrication process.

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The Formation, Structure, Distribution and Frequency of Nuclear Pores

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100066644 ◽

1971 ◽

Vol 29 ◽

pp. 518-519

Author(s):

G. G. Maul

Keyword(s):

Nuclear Pore Complex ◽

Nuclear Membrane ◽

Dynamic Structure ◽

Nuclear Pore ◽

Nuclear Pores ◽

Filter Function ◽

Etching Technique ◽

Selective Filter ◽

Membranous Part

The chromatin of eukaryotic cells is separated from the cytoplasm by a double membrane. One obvious structural specialization of the nuclear membrane is the presence of pores which have been implicated to facilitate the selective nucleocytoplasmic exchange of a variety of large molecules. Thus, the function of nuclear pores has mainly been regarded to be a passive one. Non-membranous diaphragms, radiating fibers, central rings, and other pore-associated structures were thought to play a role in the selective filter function of the nuclear pore complex. Evidence will be presented that suggests that the nuclear pore is a dynamic structure which is non-randomly distributed and can be formed during interphase, and that a close relationship exists between chromatin and the membranous part of the nuclear pore complex.Octagonality of the nuclear pore complex has been confirmed by a variety of techniques. Using the freeze-etching technique, it was possible to show that the membranous part of the pore complex has an eight-sided outline in human melanoma cells in vitro. Fibers which traverse the pore proper at its corners are continuous and indistinguishable from chromatin at the nucleoplasmic side, as seen in conventionally fixed and sectioned material. Chromatin can be seen in octagonal outline if serial sections are analyzed which are parallel but do not include nuclear membranes (Fig. 1). It is concluded that the shape of the pore rim is due to fibrous material traversing the pore, and may not have any functional significance. In many pores one can recognize a central ring with eight fibers radiating to the corners of the pore rim. Such a structural arrangement is also found to connect eight ribosomes at the nuclear membrane.

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Structures Formed by Cryoprotective Agents Used in Freezc-Etching

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100066292 ◽

1971 ◽

Vol 29 ◽

pp. 448-449

Author(s):

G. G. Cocks ◽

C. E. Cluthe

Keyword(s):

Aqueous Solution ◽

Polyethylene Oxide ◽

Liquid Nitrogen Temperature ◽

Ice Crystals ◽

Etching Technique ◽

Structural Constituent ◽

Cryoprotective Agents ◽

Quick Freezing ◽

Freeze Etching ◽

Fractured Surface

The freeze etching technique is potentially useful for examining dilute solutions or suspensions of macromolecular materials. Quick freezing of aqueous solutions in Freon or propane at or near liquid nitrogen temperature produces relatively large ice crystals and these crystals may damage the structures to be examined. Cryoprotective agents may reduce damage to the specimem, hut their use often results in the formation of a different set of specimem artifacts.In a study of the structure of polyethylene oxide gels glycerol and sucrose were used as cryoprotective agents. The experiments reported here show some of the structures which can appear when these cryoprotective agents are used.Figure 1 shows a fractured surface of a frozen 25% aqueous solution of sucrose. The branches of dendritic ice crystals surrounded hy ice-sucrose eutectic can be seen. When this fractured surface is etched the ice in the dendrites sublimes giving the type of structure shown in Figure 2. The ice-sucrose eutectic etches much more slowly. It is the smooth continuous structural constituent surrounding the branches of the dendrites.

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