Single-Crystal SiC Resonators by Photoelectrochemical Etching
2012 ◽
Vol 717-720
◽
pp. 529-532
◽
Keyword(s):
In this paper, we report single-crystal 4H-SiC resonant structures fabricated by dopant-selective photoelectrochemical etching. The frequency response of the resonant beams was characterized by a dynamic scanning method using AFM with the beams excited by a piezoelectric actuator under atmosphere pressure and room temperature. The beam with a length of 35 μm shows mechanical resonance at 945 kHz. The Young’s modulus of single-crystal SiC was derived from the measured resonant frequency. Single-crystal 4H-SiC resonators developed in this study fully exploit the excellent electrical, mechanical, and chemical properties of SiC, while dopant-selective photoelectrochemical etching technique significantly simplifies the fabrication process.
Keyword(s):
2011 ◽
Vol 287-290
◽
pp. 294-297
2009 ◽
Vol 83-86
◽
pp. 953-958
2008 ◽
Vol 8
(6)
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pp. 2793-2810
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1972 ◽
Vol 27
(3)
◽
pp. 296-301
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2015 ◽
Vol 1107
◽
pp. 137-141