Hole Diffusion Length Measurement for n‐type Semiconductors by Using Photoelectrochemical Etching Technique

1991 ◽  
Vol 138 (7) ◽  
pp. 2022-2026 ◽  
Author(s):  
Akio Yamamoto ◽  
Hideki Okada ◽  
Tadao Ikejiri
2002 ◽  
Vol 95 (1) ◽  
pp. 73-76 ◽  
Author(s):  
Jong-Wook Kim ◽  
Jae-Seung Lee ◽  
Won-Sang Lee ◽  
Jin-Ho Shin ◽  
Doo-Chan Jung ◽  
...  

2020 ◽  
Vol 10 (16) ◽  
pp. 5553
Author(s):  
Zhigang Lou ◽  
Shuyan Liang ◽  
Jiabei Yuan ◽  
Kang Ji ◽  
Jianyu Yuan ◽  
...  

In this work, the ultrafast transient absorption spectroscopy (TAs) was utilized to first investigate the charge transfer from the emerging FAPbI3 (FA = CH(NH2)2) perovskite quantum dots (PQDs) to charge transport layers. Specifically, we compared the TAs in pure FAPbI3 PQDs, PQDs grown with both electron and hole transfer layers (ETL and HTL), and PQDs with only ETL or HTL. The TA signals induced by photoexcited electrons decay much faster in PQDs samples with the ETL (~20 ps) compared to the pure FAPbI3 PQDs (>1 ns). These results reveal that electrons can effectively transport between coupled PQDs and transfer to the ETL (TiO2) at a time scale of 20 ps, much faster than the bimolecular charge recombination inside the PQDs (>1 ns), and the electron transfer efficiency is estimated to be close to 100%. In contrast, the temporal evolution of the TA signals in the PQDs with and without HTL exhibit negligible change, and no substantive hole transfer to the HTL (poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], PTAA) occurs within 1 ns. The much slower hole transfer implies the further potential of increasing the overall photo-carrier conversion efficiency through enhancing the hole diffusion length and fine-tuning the coupling between the HTL and PQDs.


Nano Letters ◽  
2016 ◽  
Vol 16 (5) ◽  
pp. 2938-2944 ◽  
Author(s):  
F. Donatini ◽  
Andres de Luna Bugallo ◽  
Pierre Tchoulfian ◽  
Gauthier Chicot ◽  
Corinne Sartel ◽  
...  

2016 ◽  
Vol 858 ◽  
pp. 345-348 ◽  
Author(s):  
Anatoly M. Strel'chuk ◽  
Baptiste Berenguier ◽  
Eugene B. Yakimov ◽  
Laurent Ottaviani

Commercial 4H-SiC p+n structures with an uncompensated donor concentration (Nd-Na) of ~1.5∙1015 cm-3 in the n-type epitaxial layer are studied. The measurement of the photocurrent, electron beam induced current and transient switching characteristics (from forward to reverse voltage), altogether showed that the value of the hole diffusion length, about 2 μm at room temperature, increases to at least 7 μm at 620 K.


1972 ◽  
Vol 15 (8) ◽  
pp. 865-868 ◽  
Author(s):  
R.D. Ryan ◽  
J.E. Eberhardt

Sign in / Sign up

Export Citation Format

Share Document