Enhancement of photodetectors devices for silicon nanostructure from study effect of etching time by photoelectrochemical etching technique

Photoluminescent (PL) porous layers were formed on p-type silicon by a metal-assisted chemical etching method using H2O2 as an oxidizing agent. Silver particles were deposited on the (100) Si surface prior to immersion in a solution of HF and H2O2. The morphology of the porous silicon (PS) layer formed by this method was investigated by atomic force microscopy (AFM). Depending on the metal-assisted chemical etching conditions, the macro- or microporous structures could be formed. Luminescence from metal-assisted chemically etched layers was measured. It was found that the PL intensity increases with increasing etching time. This behaviour is attributed to increase of the density of the silicon nanostructure. It was found the shift of PL peak to a green region with increasing of deposition time can be attributed to the change in porous morphology. Finally, the PL spectra of samples formed by high concentrated solution of AgNO3 showed two narrow peaks of emission at 520 and 550 nm. These peaks can be attributed to formation of AgF and AgF2 on a silicon surface.

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Fabrication of Micro-Gap Structure by Reactive Ion Etching Technique (RIE) for Future Reproductivity of Nanogap Biosensor

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.1109.64 ◽

2015 ◽

Vol 1109 ◽

pp. 64-68

Author(s):

Q. Humayun ◽

U. Hashim

Keyword(s):

Reactive Ion Etching ◽

Electrical Characterization ◽

Coated Sample ◽

Etching Time ◽

Semiconductor Surface ◽

Etching Technique ◽

Ion Etching ◽

Gap Spacing ◽

Gap Structure

The important role of reactive ion etching (RIE) technique is to etch the semiconductor surface directionally. The purpose of the current research is to fabricate polysilicon micro-gap structures by RIE technique for future biosensing application. Therefore zero-gap microstructure of butterfly topology was designed by using AutoCAD software and finally the designed was transferred to commercial chrome glass photomask. Ploysilicon wafer samples were selected to achieve high conductivity during electrical characterization measurement. The fabrication process starts from samples resist coating and then by employing photolithography through chrome glass photomask the zero-gap pattern of butterfly topology was transferred to resist coated sample wafer followed by resist stripping from exposed area and finally by reactive ion etching (RIE) technique the open area of polysilicon was etched directionally at different etching time to fabricate micro-gap structure on wafer samples. The spacing of fabricated micro-gap structures will be further shrink by thermal oxidation (size reduction technique) until to nanosize gap spacing. The proposed nanospacing gap will definitely show the capability to detect the bio molecule when inserted into the gap spacing.

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Preparation of Nanorod Structure of TiO2 by the Use of Photoelectrochemical Etching Technique

Journal of the Japan Society of Colour Material ◽

10.4011/shikizai1937.77.64 ◽

2004 ◽

Vol 77 (2) ◽

pp. 64-68 ◽

Cited By ~ 1

Author(s):

Takashi SUGIURA ◽

Han Jin RYU ◽

Satoshi YASUNO ◽

Hideki MINOURA

Keyword(s):

Etching Technique ◽

Photoelectrochemical Etching

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Structural and Morphological Properties of Nano Photonic Silicon Structure for Photonics Applications

Defect and Diffusion Forum ◽

10.4028/www.scientific.net/ddf.398.29 ◽

2020 ◽

Vol 398 ◽

pp. 29-33 ◽

Cited By ~ 2

Author(s):

Mariam M. Hassan ◽

Makram A. Fakhri ◽

Salah Aldeen Adnan

Keyword(s):

Porous Silicon ◽

Surface Morphology ◽

Pore Diameter ◽

Electrochemical Etching ◽

Morphological Properties ◽

Etching Time ◽

Silicon Structure ◽

Si Substrate ◽

Etching Technique ◽

Structure Surface

Porous silicon (n-PS) with diverse morphologies was prepared on silicon (Si) substrate via photo-electrochemical etching technique. We studies the structure, surface morphology, pore diameter, roughness, based on (XRD), (AFM), (SEM) at different etching time (5, 10 min) and current (10mA/cm2).

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Investigation on the Effect of Crystal Orientation Dependence of Pulse Porous Silicon for White Light Emission

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.701.164 ◽

2016 ◽

Vol 701 ◽

pp. 164-176 ◽

Cited By ~ 1

Author(s):

Nurul Hanida Abd Wahab ◽

Alhan Farhanah Abd Rahim ◽

Fatin Izzanis Mohamad Latar ◽

Ainorkhilah Mahmood

Keyword(s):

Porous Silicon ◽

Light Emission ◽

Visible Spectrum ◽

Orientation Dependence ◽

Etching Time ◽

No Emission ◽

Etching Technique ◽

Three Samples ◽

A Current

Porous silicon (PS) was formed by using an electrochemical pulse etching (PC) and conventional direct current (DC) etching techniques. The study aims to compare the effect of crystal orientations (n-type (100) and n-type (111)) on the formation of the PS under various conditions. For DC etching technique, the silicon wafers were etched in Hydrofluoric (HF) based solution with a current density of J=10 mA/cm2 for 30 minutes. While for the PC process, an electroless chemical etching with a different delay time (Td) of 0 min and 2 min were imposed before PC process starts. After that, the pulse current of J=10 mA/cm2 with the cycle time (T) of 10 ms and pause time (Toff) of 4ms were supplied in 30 min etching time in HF based electrolyte. Three samples from n-type (100) are DC1, PC1 and PC2 while the three samples from n-type (111) are DC2, PC3, and PC4 respectively. Field Emission Scanning Electron Microscopy (FESEM) images showed that the samples from n-type (100) produce more uniform circular structures and dense compared to n-type (111). The introduction of 2 minutes delay during PC process resulted in better structural of PS formation and also the optical properties shown by the Raman and Photoluminescence (PL) spectroscopies. For PL observation, the as grown Si shows no emission at the visible spectrum while all the PS samples (DC and PC techniques) exhibited significant broad spectrum between 500 nm to 900 nm respectively. It can be seen that the uniform circular pore of n-type (100) enhanced the PL emission indicated by the higher PL intensity (PC1 and PC2) compared to PC3 and PC4 from n-type (111). Raman spectroscopy showed that an improvement in the crystalline quality of PS in PC technique compared to DC indicated by the reduction of full width at half maximum (FWHM).

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Surface Morphology and Si 2p Binding Energy Investigation of Multilayer Porous Silicon Nanostructure

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.620.17 ◽

2012 ◽

Vol 620 ◽

pp. 17-21 ◽

Cited By ~ 1

Author(s):

Ahmad Afif Safwan Mohd Radzi ◽

M.A. Yarmo ◽

M. Rusop ◽

Saifollah Abdullah

Keyword(s):

Porous Silicon ◽

Surface Morphology ◽

Photoelectron Spectroscopy ◽

Multilayer Structure ◽

Electrochemical Etching ◽

Binding Energies ◽

Etching Time ◽

Potential Candidate ◽

Silicon Nanostructure ◽

Porous Silicon Nanostructure

Multilayer structure of porous silicon was fabricated using electrochemical etching method. Average thickness of multilayer structure was verified. Surface morphology from Atomic Force Microscopy (AFM) shows that surface roughness was decreased when higher etching time applied to the samples. Si 2p binding energies were corresponded to the composition of void within the silicon which prompted the formation of porous silicon nanostructure. Depth profiling technique from X-Ray photoelectron spectroscopy (XPS) was used for compositional determination of porous silicon layers since samples porosity varied according to current density applied during the electrochemical etching process. Multilayer porous silicon is a high potential candidate for Bragg grating waveguide device.

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The Effect of Etching Time On Structural Properties of Porous Quaternary AlInGaN Thin Films

Iraqi Journal of Physics (IJP) ◽

10.30723/ijp.v19i50.665 ◽

2021 ◽

Vol 19 (50) ◽

pp. 77-83

Author(s):

Ghasaq Ali Tomaa ◽

Alaa Jabbar Ghazai

Keyword(s):

Porous Silicon ◽

Crystal Size ◽

Electrochemical Etching ◽

Silicon Layer ◽

Porous Silicon Layer ◽

Etching Time ◽

Etching Technique ◽

Force Microscopy ◽

Atomic Force ◽

Homogeneous Pattern

Using photo electrochemical etching technique (PEC), porous silicon (PS) layers were produced on n-type silicon (Si) wafers to generate porous silicon for n-type with an orientation of (111) The results of etching time were investigated at: (5,10,15 min). X-ray diffraction experiments revealed differences between the surface of the sample sheet and the synthesized porous silicon. The largest crystal size is (30 nm) and the lowest crystal size is (28.6 nm) The analysis of Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscope (FESEM) were used to research the morphology of porous silicon layer. As etching time increased, AFM findings showed that root mean square (RMS) of roughness and porous silicon grain size decreased and FESEM showed a homogeneous pattern and verified the formation of uniform porous silicon.

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Hole Diffusion Length Measurement for n‐type Semiconductors by Using Photoelectrochemical Etching Technique

Journal of The Electrochemical Society ◽

10.1149/1.2087307 ◽

1991 ◽

Vol 138 (7) ◽

pp. 2022-2026 ◽

Cited By ~ 2

Author(s):

Akio Yamamoto ◽

Hideki Okada ◽

Tadao Ikejiri

Keyword(s):

Diffusion Length ◽

Length Measurement ◽

Etching Technique ◽

Photoelectrochemical Etching ◽

Hole Diffusion Length

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A Damage-Reduced Process Revealed by Photoluminescence in Photoelectrochemical Etching GaN

MRS Proceedings ◽

10.1557/proc-595-f99w11.73 ◽

1999 ◽

Vol 595 ◽

Author(s):

J. M. Hwang ◽

J. T. Hsieh ◽

H. L. Hwang ◽

W. H. Hung

Keyword(s):

Chemical Etching ◽

Variable Temperature ◽

Treatment Method ◽

Yellow Luminescence ◽

Etching Technique ◽

Photoelectrochemical Etching ◽

Shallow Acceptor ◽

Novel Technique ◽

Deep Donor

AbstractPhotoelectrochemical (PEC) etching technique has been proven to be an effective method to etch GaN. Despite its success, investigations on etching-induced damage are still scare. In this work, the damage induced by PEC etching of GaN in KOH electrolyte was studied. Photoluminescence (PL) spectroscopy was used to explore the origin of etching-induced damaged layer. From the variable temperature PL measurements, the origin of etching-induced damage was attributed to be the defect complex of VGa-ON (gallium vacancy bonds to oxygeon on nitrogen antisite). With determination of the defect origin, the electronic transition in the etch damage-related yellow luminescence (YL) band was suggested to be deep donor-like state to shallow-acceptor transition. In addition, a post-treatment method with boiled KOH chemical etching was developed to remove the thin damaged layer. In this method, crystallographic etching characteristics of boiled KOH was observed to assist in the formation of smooth sidewall facets. As revealed by the reduction of yellow luminescence, we propose this novel technique as a near damage-free etching method.

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