Recent Progress in Microcrystalline Semiconductor Thin Films

1996 ◽  
Vol 452 ◽  
Author(s):  
K. Tanaka
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Recent Progress ◽  
Thin Film Transistor ◽  
Chemical Vapor ◽  
Film Structure ◽  
Preparation Methods ◽  
Active Layers ◽  
Semiconductor Thin Films ◽  
Si Films

AbstractNanocrystalline/microcrystalline thin films prepared at relatively low temperatures by plasma-enhanced chemical vapor deposition (PECVD), in particular hydrogenated microcrystalline Si films (μc-Si:H), have attracted an increasing attention not only as potential materials for thin film solar cells, but also as active layers in thin film transistor arrays for flat panel displays. This paper reviews recent progress in the investigation of these materials; preparation methods, structural and optical properties, and electronic transports. Emphasis is placed on the understanding of the growth mechanism of μc-Si:H films as well as the microscopic characterization of the film structure.

Potential of Hot Wire CVD for Active Matrix TFT Manufacturing

2009 ◽  
Vol 1153 ◽  
Author(s):  
Ruud E.I. Schropp ◽  
Zomer Silvester Houweling ◽  
Vasco Verlaan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mass Density ◽  
Thin Film Transistor ◽  
Chemical Vapor ◽  
High Mass ◽  
Hot Wire ◽  
Large Area ◽  
Active Matrix ◽  
Electrical Fields

AbstractHot Wire Chemical Vapor Deposition (HWCVD) is a fast deposition technique with high potential for homogeneous deposition of thin films on large area panels or on continuously moving substrates in an in-line manufacturing system. As there are no high-frequency electromagnetic fields, scaling up is not hampered by finite wavelength effects or the requirement to avoid inhomogeneous electrical fields. Since 1996 we have been investigating the application of the HWCVD process for thin film transistor manufacturing. It already appeared then that these Thin Film Transistors (TFTs) were electronically far more stable than those with Plasma Enhanced (PE) CVD amorphous silicon. Recently, we demonstrated that very compact SiNx layers can be deposited at high deposition rates, up to 7 nm/s. The utilization of source gases in HWCVD of a-Si3N4 films deposited at 3 nm/s is 75 % and 7 % for SiH4 and NH3, respectively. Thin films of stoichiometric a-Si3N4 deposited at this rate have a high mass-density of 3.0 g/cm3. The dielectric properties have been evaluated further in order to establish their suitability for incorporation in TFTs. Now that all TFT layers, namely, the SiNx insulator, the a-Si:H or μc Si:H layers, and the n-type doped thin film silicon can easily be manufactured by HWCVD, the prospect of “all HWCVD” TFTs for active matrix production is within reach. We tested the 3 nm/s SiNx material combined with our protocrystalline Si:H layers deposited at 1 nm/s in ‘all HW’ TFTs. Results show that the TFTs are state of the art with a field-effect mobility of 0.4 cm2/Vs. In order to assess the feasibility of large area deposition we are investigating in-line HWCVD for displays and solar cells.

Taper Angle of Silicon Nitride Thin Film Control by Laser Direct Pattern for Transistors Fabrication

2013 ◽  
Vol 284-287 ◽  
pp. 225-229 ◽  
Author(s):  
Chao Nan Chen ◽  
Jung Jie Huang ◽  
Gwo Mei Wu ◽  
How Wen Chien
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Nitride ◽  
Laser Irradiation ◽  
Vapor Deposition ◽  
Liquid Crystal Display ◽  
Thin Film Transistor ◽  
Chemical Vapor ◽  
Taper Angle ◽  
Shot Number

Silicon nitride (SiNx), an important material used as a dielectric layer and passivation layer in thin film transistor liquid crystal display (TFT LCD) was patterned by a non-lithographic process. SiNx was deposited by plasma enhanced chemical vapor deposition (PECVD) on glass substrate. Laser photoablation can effectively pattern 5 µm diameter with 200 nm depth hole in SiNx thin films with laser photoablation. The threshold remove fluence is 1350 mJ/cm2 with 1 laser irradiation shot. The contact-hole taper angle as a function of the laser irradiation shot number. The taper angle increased with increasing the laser irradiation shot number. The contact-hole taper angle etched profile was successfully controlled by vary the laser irradiation shot number.

The Research and Application Progress of Vanadium Dioxide Thin Films

2013 ◽  
Vol 320 ◽  
pp. 287-295
Author(s):  
Jian Ping Long ◽  
Mi Jiang ◽  
Xin Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Material ◽  
Sol Gel ◽  
Chemical Vapor ◽  
Preparation Methods ◽  
Smart Windows ◽  
Protective Films ◽  
Thin Film Preparation ◽  
Application Fields

The VO2thin film is a kind of functional material with phase transition properties, and has broad application prospects. In this paper, the main VO2thin film preparation methods of sputtering, chemical vapor deposition, sol-gel method and the research status of electrical properties, optical properties , phase change properties and the calculation theory study were summarized. The main application fields and application progress of the VO2thin films in the smart windows, the infrared pulse laser protective films, the photonic crystal, the dielectric material of CD, the material of optical and electrical switch were introduced.

Microstructural characterization of YBa2Cu3O7-x thin films formed by metalorganic CVD

1991 ◽  
Vol 49 ◽  
pp. 1080-1081
Author(s):  
P. Lu ◽  
W. Huang ◽  
C.S. Chern ◽  
Y.Q. Li ◽  
J. Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Film Growth ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Ion Milling ◽  
Conventional Grinding

The YBa2Cu3O7-x thin films formed by metalorganic chemical vapor deposition(MOCVD) have been reported to have excellent superconducting properties including a sharp zero resistance transition temperature (Tc) of 89 K and a high critical current density of 2.3x106 A/cm2 or higher. The origin of the high critical current in the thin film compared to bulk materials is attributed to its structural properties such as orientation, grain boundaries and defects on the scale of the coherent length. In this report, we present microstructural aspects of the thin films deposited on the (100) LaAlO3 substrate, which process the highest critical current density.Details of the thin film growth process have been reported elsewhere. The thin films were examined in both planar and cross-section view by electron microscopy. TEM sample preparation was carried out using conventional grinding, dimpling and ion milling techniques. Special care was taken to avoid exposure of the thin films to water during the preparation processes.

Quantitative Image Analysis of Fractal-like Thin Films of Organic Semiconductors

2018 ◽  
Author(s):  
Weikun Zhu ◽  
Erfan Mohammadi ◽  
Ying Diao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Image Analysis ◽  
Fractal Dimension ◽  
Organic Semiconductors ◽  
Film Growth ◽  
Electronic Device ◽  
Significant Control ◽  
Semiconductor Thin Films ◽  
Two Parameters

Morphology modulation offers significant control over organic electronic device performance. However, morphology quantification has been rarely carried out via image analysis. In this work, we designed a MATLAB program to evaluate two key parameters describing morphology of small molecule semiconductor thin films: fractal dimension and film coverage. We then employ this program in a case study of meniscus-guided coating of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C<sub>8</sub>-BTBT) under various conditions to analyze a diverse and complex morphology set. The evolution of morphology in terms of fractal dimension and film coverage was studied as a function of coating speed. We discovered that combined fractal dimension and film coverage can quantitatively capture the key characteristics of C<sub>8</sub>-BTBT thin film morphology; change of these two parameters further inform morphology transition. Furthermore, fractal dimension could potentially shed light on thin film growth mechanisms.

Growth, Structural and Mechanical Characterization and Reliability of Chemical Vapor Deposited Co and Co3O4 Thin Films as Candidate Materials for Sensing Applications

2011 ◽  
Vol 495 ◽  
pp. 108-111 ◽  
Author(s):  
Vasiliki P. Tsikourkitoudi ◽  
Elias P. Koumoulos ◽  
Nikolaos Papadopoulos ◽  
Costas A. Charitidis
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Elastic Modulus ◽  
Data Storage ◽  
Mechanical Stability ◽  
Chemical Vapor ◽  
Magnetic Sensors ◽  
Functional Coatings ◽  
Sensing Applications ◽  
Chemical Vapor Deposited

The adhesion and mechanical stability of thin film coatings on substrates is increasingly becoming a key issue in device reliability as magnetic and storage technology driven products demand smaller, thinner and more complex functional coatings. In the present study, chemical vapor deposited Co and Co3O4thin films on SiO2and Si substrates are produced, respectively. Chemical vapor deposition is the most widely used deposition technique which produces thin films well adherent to the substrate. Co and Co3O4thin films can be used in innovative applications such as magnetic sensors, data storage devices and protective layers. The produced thin films are characterized using nanoindentation technique and their nanomechanical properties (hardness and elastic modulus) are obtained. Finally, an evaluation of the reliability of each thin film (wear analysis) is performed using the hardness to elastic modulus ratio in correlation to the ratio of irreversible work to total work for a complete loading-unloading procedure.

Fabrication and Characterization of Hydrogenated Amorphous Silicon Bipolar Thin Film Transistor (B-TFT)

2004 ◽  
Vol 808 ◽  
Author(s):  
Yue Kuo ◽  
Yu Lei ◽  
Helinda Nominanda
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Chemical Vapor ◽  
Base Layer ◽  
Current Gain ◽  
Collector Current ◽  
Literature Report ◽  
Small Current ◽  
Operation Speed ◽  
Driving Capability

ABSTRACTThe conventional a-Si:H thin film transistor (TFT) is a field effect transistor (FET), which has disadvantages of a low operation speed and a small current driving capability. To achieve a higher speed and larger current driving capability, a potential solution is to fabricate the a-Si:H-based bipolar thin film transistor (B-TFT). In this study, a-Si:H p-i-n junctions were prepared and studied in order to determine the proper layer thickness for good junction behaviors. B-TFTs composed of a stacked structure of n+/i/p/i/n+ were then fabricated. The complete B-TFT was made using plasma enhanced chemical vapor deposition (PECVD) to deposit all doped and undoped a-Si:H layers and SiNx dielectrics at 250°C. Reactive ion etching (RIE) and wet etching methods were used to define base and emitter regions and contacts. The I-V characteristics of the complete B-TFT were investigated. The common-emitter current gain is 3∼6, which is larger than the literature report of 2∼3. In addition, a collector current larger than the literature value was obtained. A significant current noise was observed, which may be contributed to the high series resistance of the base layer and defective junction interfaces. In this paper, process and structure influences on the a-Si:H junction and B-TFT performances are discussed.

Dynamics of Microstructure in the Early Stages of Ion Beam Assisted Film Growth

1991 ◽  
Vol 237 ◽  
Author(s):  
Harry A. Atwater ◽  
C. J. Tsai ◽  
S. Nikzad ◽  
M.V.R. Murty
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Recent Progress ◽  
Film Growth ◽  
Ion Beam ◽  
Surface Interactions ◽  
Low Energy ◽  
Early Stages ◽  
Semiconductor Thin Films ◽  
Nucleation Mechanisms

ABSTRACTRecent progress in low energy ion-surface interactions, and the early stages of ion-assisted epitaxy of semiconductor thin films is described. Advances in three areas are discussed: dynamics of displacements and defect incorporation, nucleation mechanisms, and the use of ion bombardment to modify epitaxial growth kinetics in atrulysurface-selective manner.

Sign in / Sign up

Export Citation Format

Share Document