Formation of Aluminum Nitride Film for High Power Soft X-Ray Source Using Ion-Beam Assisted Deposition Method

2005 ◽  
pp. 43-46
Author(s):  
Takaomi Matsutani ◽  
Masato Kiuchi ◽  
Kiyotaka Shirouzu ◽  
Akihiro Yoshioka ◽  
Ryuichi Shimizu ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
High Power ◽  
Ion Beam ◽  
Nitride Film ◽  
Deposition Method ◽  
X Ray ◽  
Ion Beam Assisted Deposition

Formation of Aluminum Nitride Film for High Power Soft X-Ray Source Using Ion-Beam Assisted Deposition Method

2005 ◽  
Vol 107 ◽  
pp. 43-46 ◽  
Author(s):  
Takaomi Matsutani ◽  
Masato Kiuchi ◽  
Kiyotaka Shirouzu ◽  
Akihiro Yoshioka ◽  
Ryuichi Shimizu ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Deposition Rate ◽  
High Power ◽  
Ion Beam ◽  
Knoop Hardness ◽  
Nitride Film ◽  
Deposition Method ◽  
Durability Test ◽  
X Ray ◽  
Aln Film

An aluminum nitride (AlN) target for Al-Kα X-ray source with high power and long service life has been developed by N2 + ions assisted Al vapor deposition method (IBAD). The AlN film formations were carried out at the Al deposition rate varied from 2.0 nm/s to 0.15 nm/s with a fixed low-energy N2 + ion of 1 keV. The films were deposited on Cu substrate at room temperature. The AlN films were characterized by an X-ray diffraction, an electron probe X-ray microanalysis and a Knoop-hardness measurement. The AlN deposited at the Al deposition rate of 0.5 nm has a N/Al ratio of 0.4, a Knoop-hardness of ~1500 and a low resistance of ~0.2 . Comparison of durability test between the AlN target and a conventional Al target was performed. It has been revealed, after 500 hours under an electron bombardment of 300 mA at 20 kV, that there were no change of morphology and X-ray intensity on the AlN-surface whilst cracks due to the heat-cycle fatigue covered the Al-surface.

Al / Al-N / Ain Compositional Gradient Film Synthesized by Ion-Beam Assisted Deposition Method

1996 ◽  
Vol 438 ◽  
Author(s):  
Yoshiki Amamoto ◽  
Shingo Uchiyama ◽  
Yoshihisa Watanabe ◽  
Yoshikazu Nakamura
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Beam Current ◽  
Deposition Method ◽  
Si Substrate ◽  
Compositional Gradient ◽  
Cross Sectional ◽  
X Ray ◽  
Ion Beam Assisted Deposition ◽  
The Cross

AbstractAl / AI-N / AIN compositional gradient thin film was deposited on a Si(100) substrate at room temperature by ion-beam assisted deposition method, with a diminishing ion beam current from 1.4 to 0 mA at increments of 0.3 mA in order to gradually decrease the nitrogen to aluminum ratio at the substrate. The gradual Al and AIN variation in composition was shown by the change of the Al / N atomic ratio analysed by the energy dispersive X-ray spectroscopy(EDX) and the X-ray photoelectron spectroscopy (XPS) in the cross section of the film. The formation of crystalline Al metal and AIN ceramic layer on the Si substrate was revealed by X-ray diffraction(XRD). The cross sectional image taken by high resolution transmission electron microscope (HRTEM) showed a nano-sized crystalline AI-N ceramic material and the flat interface between the Si substrate and the AIN film.

Ion Beam Deposition of Boron-Aluminum Nitride Thin Films

1995 ◽  
Vol 388 ◽  
Author(s):  
J.H. Edgar ◽  
C.R. Eddy ◽  
J.A. Sprague ◽  
B.D. Sartwell
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Electron Spectroscopy ◽  
Boron Content ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Beam Deposition ◽  
Ion Beam Assisted Deposition ◽  
Beam Deposition

AbstractAnalysis of the phase behavior, structure, and composition of aluminum nitride thin films with up to 22% boron prepared by ion-beam assisted deposition is presented. the c-lattice constant of the film decreased with increasing boron content as expected from the formation of an aIN - wurtzite BN alloy. there was no evidence for separate boron nitride precipitation from either X-ray diffraction or FTIR. IN contrast, auger electron spectroscopy of the boron present in the films suggested that two types of boron bonding was present.

Formation of Aluminum Nitride Films by Gas Nitriding

2014 ◽  
Vol 625 ◽  
pp. 651-656 ◽  
Author(s):  
Masashi Yoshida ◽  
Zhou Tao ◽  
Noah Utsumi
Keyword(s):  
Aluminum Alloys ◽  
Aluminum Nitride ◽  
Electron Probe ◽  
Treatment Time ◽  
Film Surface ◽  
Nitride Film ◽  
X Ray Diffraction ◽  
Good Adhesion ◽  
X Ray ◽  
Gas Nitriding

In this study, aluminum alloys were subjected to nitriding at 823 K for 0–18.0 ks using alumina and magnesium powders for improving their radiation performance. After nitriding, aluminum nitride films were formed on the aluminum substrate. The thickness of the formed films varied from 1.5 to 11 μm, and the color of the film surface was dark brown or black. The thickness of the aluminum nitride film increased with an increase in the treatment time. X-ray diffraction and electron probe microanalysis results showed that the film was composed of aluminum nitride, alumina, aluminum, and magnesium. Further, the film showed good adhesion at 0 ks.

High-Jc YBCO Conductors Fabricated By Magnetron Deposition

2000 ◽  
Vol 616 ◽  
Author(s):  
N. Savvides ◽  
S. Gnanarajan ◽  
J. Herrmann ◽  
A. Thorley ◽  
A. Katsaros ◽  
...  
Keyword(s):  
Ion Beam ◽  
Coated Conductors ◽  
Buffer Layers ◽  
Similar Degree ◽  
Magnetron Deposition ◽  
X Ray ◽  
Ion Beam Assisted Deposition ◽  
Pole Figures ◽  
Ybco Tapes ◽  
Biaxial Alignment

AbstractSuperconducting YBCO/YSZ/Hastelloy tapes or coated conductors were fabricated by combining ion beam assisted deposition (ILBAD) and magnetron sputtering techniques. The degree of biaxial alignment of the YSZ buffer layers and the epitaxial YBCO films was determined from x-ray pole figures and ø-scans. The best YSZ buffer layers had FWHFM δø= 7°- 10°. The corresponding YBCO tapes achieved a similar degree of biaxial alignment and high critical current density, Jc(77K,0T) = (0.9 – l.25)×106 A cm−2.

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