Co/CoO Hybrid Film by Post Annealing

Author(s):  
J.B. Yi ◽  
J. Ding
Keyword(s):  
2006 ◽  
Vol 111 ◽  
pp. 175-178 ◽  
Author(s):  
J.B. Yi ◽  
J. Ding

Co/CoO hybrid films are prepared by annealing Co films with various ratio of oxygen of O2/Ar mixture. The nanocomposite film shows a relatively large exchange bias (5.32 kOe) and coercivity (HC-: 6.17 kOe) taken at 80 K when formed by post annealing at 473 K under 3% O2 for 1h. Both are much larger than that of Co/CoO nanocomposite by reactive sputtering with an oxygen partial pressure. Investigation shows that the formation of interface by post annealing is of importance for the large exchange bias and enhanced coercivity. The surface CoO, grain size of CoO and composition may also contribute to magnetic properties of the post annealing film.


2019 ◽  
Vol 9 (4) ◽  
pp. 486-493 ◽  
Author(s):  
S. Sahoo ◽  
P. Manoravi ◽  
S.R.S. Prabaharan

Introduction: Intrinsic resistive switching properties of Pt/TiO2-x/TiO2/Pt crossbar memory array has been examined using the crossbar (4×4) arrays fabricated by using DC/RF sputtering under specific conditions at room temperature. Materials and Methods: The growth of filament is envisaged from bottom electrode (BE) towards the top electrode (TE) by forming conducting nano-filaments across TiO2/TiO2-x bilayer stack. Non-linear pinched hysteresis curve (a signature of memristor) is evident from I-V plot measured using Pt/TiO2-x /TiO2/Pt bilayer device (a single cell amongst the 4×4 array is used). It is found that the observed I-V profile shows two distinguishable regions of switching symmetrically in both SET and RESET cycle. Distinguishable potential profiles are evident from I-V curve; in which region-1 relates to the electroformation prior to switching and region-2 shows the switching to ON state (LRS). It is observed that upon reversing the polarity, bipolar switching (set and reset) is evident from the facile symmetric pinched hysteresis profile. Obtaining such a facile switching is attributed to the desired composition of Titania layers i.e. the rutile TiO2 (stoichiometric) as the first layer obtained via controlled post annealing (650oC/1h) process onto which TiO2-x (anatase) is formed (350oC/1h). Results: These controlled processes adapted during the fabrication step help manipulate the desired potential barrier between metal (Pt) and TiO2 interface. Interestingly, this controlled process variation is found to be crucial for measuring the switching characteristics expected in Titania based memristor. In order to ensure the formation of rutile and anatase phases, XPS, XRD and HRSEM analyses have been carried out. Conclusion: Finally, the reliability of bilayer memristive structure is investigated by monitoring the retention (104 s) and endurance tests which ensured the reproducibility over 10,000 cycles.


2014 ◽  
Vol 504 ◽  
pp. 8-11 ◽  
Author(s):  
Takashi Noji ◽  
Takehiro Hatakeda ◽  
Shohei Hosono ◽  
Takayuki Kawamata ◽  
Masatsune Kato ◽  
...  

RSC Advances ◽  
2015 ◽  
Vol 5 (107) ◽  
pp. 88471-88476 ◽  
Author(s):  
Tianqi Guo ◽  
Keyu Han ◽  
Liping Heng ◽  
Moyuan Cao ◽  
Lei Jiang

A highly ordered open-pore hybrid film was fabricated by controlling the substrate roughness and wettability. The composite with different wettability on the two side resulted in an attractive unidirectional water-penetration function (see figure).


2021 ◽  
Vol 45 (14) ◽  
pp. 6424-6431
Author(s):  
Jingjing Ju ◽  
Jiajia Lu ◽  
Xiaoyue Shi ◽  
Hongwei Zhu ◽  
Han-Pu Liang

An efficient binder-free OER electrode CoNiFeOx/NF with mesoporous structure was synthesized by a facile strategy of hydrothermal method and post-annealing.


2021 ◽  
Vol 64 (6) ◽  
Author(s):  
Zhiqiang Cao ◽  
Yiming Wei ◽  
Wenjing Chen ◽  
Shaohua Yan ◽  
Lin Lin ◽  
...  

2021 ◽  
Vol 35 (5) ◽  
pp. 4587-4595
Author(s):  
Shiyang Wang ◽  
Yang Liu ◽  
Ke Lu ◽  
Wenbin Cai ◽  
Yulin Jie ◽  
...  
Keyword(s):  

2002 ◽  
Vol 378-381 ◽  
pp. 527-530 ◽  
Author(s):  
H Sato ◽  
N Ishikawa ◽  
A Iwase ◽  
Y Chimi ◽  
T Hashimoto ◽  
...  

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