New Structures and Materials for Next Generation Photonic Technology

2011 ◽  
Vol 120 ◽  
pp. 556-560
Author(s):  
D. H Zhang ◽  
T. Mei ◽  
D.Y. Tang ◽  
X. C. Yuan ◽  
T. P. Chen
Keyword(s):  
Light Source ◽  
Silicon On Insulator ◽  
Visible Range ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Light Manipulation ◽  
Loss Compensation ◽  
Photonic Circuit ◽  
Nano Crystal ◽  
First Time

We present the main results achieved in light source, light manipulation and imaging and sensing in our competitive research program. In light source, we have for the first time developed grapheme mode-locked lasers and dark pause lasers as well as nano-crystal Si based light emitting devices with colour tunable. In light manipulation, loss compensation of surface plasmon polaritons (SPPs) using semiconductor gain media was studied theoretically and demonstrated experimentally and the SPP propagation can be controlled through electrical pumping. Microring resonators based on silicon on insulator and III-V semiconductors technologies have been successfully fabricated and they can be used as filter and switch in the photonic circuit. In imaging and sensing, both SPP and metamaterial based lenses are developed and resolution far beyond diffraction limit in visible range has been realized. Broadband photodetectors based on dilute nitrides are also demonstrated.

Electrochemically triggered upconverted luminescence for light-emitting devices

2019 ◽  
Vol 55 (84) ◽  
pp. 12611-12614 ◽  
Author(s):  
Haruki Minami ◽  
Takuya Ichikawa ◽  
Kazuki Nakamura ◽  
Norihisa Kobayashi
Keyword(s):  
Energy Transfer ◽  
Triplet Energy ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Triplet Energy Transfer ◽  
First Time ◽  
Triplet Triplet Annihilation

Electrochemically triggered upconverted luminescence through triplet–triplet energy transfer (TTET) and subsequent triplet–triplet annihilation upconversion (TTA-UC) is observed for the first time.

Influence of Different Atmospheres on the Life Time of Porous Silicon Light-Emitting Devices

2002 ◽  
Vol 737 ◽  
Author(s):  
B.R. Jumayev ◽  
H.L. Tam ◽  
K.W. Cheah ◽  
N.E. Korsunska
Keyword(s):  
Porous Silicon ◽  
Reverse Bias ◽  
Present Report ◽  
Forward Bias ◽  
Life Time ◽  
Visible Range ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Cu Alloy ◽  
Metal Diffusion

ABSTRACTIn present report, we investigated the degradation processes in porous silicon light-emitting devices (LED) in different atmospheres (O2, N2, air and vacuum) by photoluminescence (PL), electroluminescence (EL), lifetime (LT) and I-V characteristic measurements as well as by Energy Dispersive X-ray Spectroscopy (EDS). The contacts were made by evaporation of Au and Au/Cu alloy. The LEDs emit in visible range at forward and reverse bias. As a rule, full width at half maximum of EL spectrum is wider than that of PL spectrum. The bias direction of applied voltage during degradation change EL, PL, I-V characteristics, and LT of the LEDs. At forward bias, LT degradation is less than that in reverse bias.The degradation of LEDs during forward bias did not produce any change in the spectral shape of EL and PL. At reverse bias, degradation led to red shift in the peak of EL and PL. The results show that the lifetime of LEDs with Au contact is longer than Au-Cu. Operating in different atmospheres, the LT in vacuum is longest and is more than 100 hours in reverse bias at room temperature.Possible mechanisms of degradation of LEDs are discussed. It is proposed that degradation is connected mainly with two processes: oxidation and metal diffusion. It is shown that the oxygen and metal in ionic state can diffuse quickly. Hence, in forward bias, the diffusion of metal would dominate, and in reverse bias, diffusion of oxygen dominates.

scholarly journals Expanded Electroluminescence in High Load CdS Nanocrystals PVK-Based LEDs

Nanomaterials ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 1212 ◽  
Author(s):  
Fernando Rodríguez-Mas ◽  
Juan Carlos Ferrer ◽  
José Luis Alonso ◽  
Susana Fernández de Ávila
Keyword(s):  
Active Layer ◽  
Light Emission ◽  
Visible Range ◽  
Cds Nanoparticles ◽  
Polar Solvents ◽  
Light Emitting ◽  
White Leds ◽  
Light Emitting Devices ◽  
Zinc Blende ◽  
Hybrid Devices

Immiscibility between dimethyl sulfoxide (DMSO) and polar solvents used for poly(N-vinylcarbazole) (PVK) solutions, leads to failed light-emitting diodes when colloidal cadmium sulfide (CdS) nanoparticles capped with thiophenol are incorporated to their active layer. To prevent this, a heat treatment is applied to the CdS nanoparticles in order to evaporate DMSO solvent. After evaporation most of the nanoparticles increased their size, and some of them show hexagonal crystalline structure instead of the original cubic zinc-blende observed in colloidal pre-treated nanoparticles. Nevertheless, enhanced electronic properties are measured in light-emitting devices when DMSO-free nanoparticles are embedded in the poly(N-vinylcarbazole) active layer. Light emission from these hybrid devices comprises the whole visible range of wavelengths as searched for white LEDs. Moreover, electroluminescence from both types of CdS nanoparticles (smaller cubic and bigger hexagonal) has been discriminated and interpreted through Gaussian deconvolution.

Evolution of white organic light-emitting devices: from academic research to lighting and display applications

2019 ◽  
Vol 3 (6) ◽  
pp. 970-1031 ◽  
Author(s):  
Yongming Yin ◽  
Muhammad Umair Ali ◽  
Wenfa Xie ◽  
Huai Yang ◽  
Hong Meng
Keyword(s):  
Academic Research ◽  
Active Matrix ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Organic Light ◽  
Organic Light Emitting Devices ◽  
First Time

Recently, Apple Inc. launched the highly anticipated cellphone, the iPhone X, which adopts an active-matrix organic light-emitting display (AMOLED) for the first time.

Conductivity Control of AlGaN. Fabrication of AlGaN/GaN Multi-Heterośtructure and their Application to UV/Blue Light Emitting Devices

1992 ◽  
Vol 242 ◽  
Author(s):  
I. Akasaki ◽  
H. Amano
Keyword(s):  
Electrical Properties ◽  
Size Effect ◽  
High Quality ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Quantum Size ◽  
Junction Type ◽  
P Type ◽  
First Time ◽  
Type Conduction

ABSTRACTThe method for controlling the electrical properties of n-type GaN and AIGaN have been established. Both GaN and AIGaN films having p - type conduction have been realized for the first time. High quality AIGaN/GaN mu I t i-he t er ostrueture showing clear quantum size effect has been fabricated. P-n junction type UV/blue LED with double he t e ros t rue ture have been developed for the first time.

Efficient hybrid white polymer light-emitting devices with electroluminescence covered the entire visible range and reduced efficiency roll-off

2012 ◽  
Vol 100 (6) ◽  
pp. 063304 ◽  
Author(s):  
Sujun Hu ◽  
Minrong Zhu ◽  
Qinghua Zou ◽  
Hongbin Wu ◽  
Chuluo Yang ◽  
...  
Keyword(s):  
Visible Range ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Polymer Light Emitting Devices

scholarly journals Large-Area Binary Blazed Grating Coupler between Nanophotonic Waveguide and LED

2014 ◽  
Vol 2014 ◽  
pp. 1-6
Author(s):  
Hongqiang Li ◽  
Wenqian Zhou ◽  
Meiling Zhang ◽  
Yu Liu ◽  
Cheng Zhang ◽  
...  
Keyword(s):  
Incident Angle ◽  
Coupling Efficiency ◽  
Silicon On Insulator ◽  
Grating Coupler ◽  
Large Area ◽  
Blazed Grating ◽  
Light Emitting ◽  
Arrayed Waveguide ◽  
First Time ◽  
Difference Time

A large-area binary blazed grating coupler for the arrayed waveguide grating (AWG) demodulation integrated microsystem on silicon-on-insulator (SOI) was designed for the first time. Through the coupler, light can be coupled into the SOI waveguide from the InP-based C-band LED for the AWG demodulation integrated microsystem to function. Both the length and width of the grating coupler are 360 μm, as large as the InP-based C-band LED light emitting area in the system. The coupler was designed and optimized based on the finite difference time domain method. When the incident angle of the light source is0°, the coupling efficiency of the binary blazed grating is 40.92%, and the 3 dB bandwidth is 72 nm at a wavelength of 1550 nm.

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