Stacking Fault Substructure of Martensite in Steel

2011 ◽  
Vol 121-126 ◽  
pp. 3493-3497
Author(s):  
Yun Ping Ji ◽  
Zong Chang Liu ◽  
Hui Ping Ren
Keyword(s):  
Electron Microscope ◽  
Crystal Lattice ◽  
Formation Mechanism ◽  
Transmission Electron Microscope ◽  
Stacking Faults ◽  
Stacking Fault ◽  
High Density ◽  
Shear Mechanism ◽  
Transmission Electron

The stacking fault substructure was observed in the quenched martensite of 35CrMo, 2Cr13 and W6Mo5Cr4V2 steels by JEM-2100 transmission electron microscope. It is significant theoretically to discovery the stacking fault substructure and then to study its formation mechanism. The results show that the stacking faults in the martensite of steels are superfine with a few nanometers spacings, which are often concomitant with the high-density dislocations. It is considered that the stacking fault results from the crystal lattice misarrangement during the crystal lattice reconstruction from austenite to martensite in steels. The shear mechanism cannot explain the formation of the stacking fault.

Formation mechanism of Sn-patch between SnAgCu solder and Ti/Ni(V)/Cu under bump metallization

2009 ◽  
Vol 24 (8) ◽  
pp. 2638-2643 ◽  
Author(s):  
Kai-Jheng Wang ◽  
Yan-Zuo Tsai ◽  
Jenq-Gong Duh ◽  
Toung-Yi Shih
Keyword(s):  
Electron Microscope ◽  
Field Emission ◽  
Formation Mechanism ◽  
Transmission Electron Microscope ◽  
Electron Probe ◽  
Under Bump Metallization ◽  
Rich Phase ◽  
Snagcu Solder ◽  
Electron Probe Microanalyzer ◽  
Transmission Electron

An Sn-patch formed in Ni(V)-based under bump metallization during reflow and aging. To elucidate the evolution of the Sn-patch, the detailed compositions and microstructure in Sn–Ag–Cu and Ti/Ni(V)/Cu joints were analyzed by a field emission electron probe microanalyzer (EPMA) and transmission electron microscope (TEM), respectively. There existed a concentration redistribution in the Sn-patch, and its microstructure also varied with aging. The Sn-patch consisted of crystalline Ni and an amorphous Sn-rich phase after reflow, whereas V2Sn3 formed with amorphous an Sn-rich phase during aging. A possible formation mechanism of the Sn-patch was proposed.

Fine crystal lattice fringes observed using a transmission electron microscope with 1 MeV coherent electron waves

2000 ◽  
Vol 76 (10) ◽  
pp. 1342-1344 ◽  
Author(s):  
T. Kawasaki ◽  
T. Yoshida ◽  
T. Matsuda ◽  
N. Osakabe ◽  
A. Tonomura ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Crystal Lattice ◽  
Transmission Electron Microscope ◽  
Fine Crystal ◽  
Transmission Electron

Observations of Defect Generation at Stacking Faults in Boron Diffused and Oxidized Silicon Films

1973 ◽  
Vol 31 ◽  
pp. 128-129 ◽  
Author(s):  
A. G. Cullis ◽  
D. M. Maher ◽  
C. M. Hsieh
Keyword(s):  
Electron Microscope ◽  
Oxide Layer ◽  
Silicon Wafer ◽  
Transmission Electron Microscope ◽  
Defect Formation ◽  
Stacking Faults ◽  
Epitaxial Silicon ◽  
Partial Dislocations ◽  
Substrate Side ◽  
Transmission Electron

Recently, the transmission electron microscope (TEM) has been used to study the formation and geometry of defect colonies in annealed and quenched silicon and in thermally oxidized and boron diffused silicon. The purpose of the present study was to examine subsidiary defect formation which can occur during the climb of Frank partial dislocations bounding stacking faults in boron diffused and subsequently thermally oxidized silicon. In these experiments, a {001} epitaxial silicon wafer (n-type, 1Ω−cm) was boron diffused (to 5×1018/cm3), and then steam oxidized for 2 hr at 1050°C. Prior to oxidation the wafer was cleaned using HF as a last step. After oxidation the oxide layer was first removed and then specimens from the wafer were chemically thinned from the substrate side for TEM observations (200 kV).

The L12 to DO19 Phase Transformation In The Intermetallic Compound Fe3Ge

1997 ◽  
Vol 481 ◽  
Author(s):  
Q. Z. Chen ◽  
A. H. W. Ngan ◽  
B. J. Duggan
Keyword(s):  
Phase Transformation ◽  
Electron Microscope ◽  
Intermetallic Compound ◽  
Transmission Electron Microscope ◽  
Stacking Fault ◽  
Transmission Electron ◽  
Do19 Phase ◽  
Annealing Experiments

ABSTRACTA large kinetics hysteresis is found to exist between the forward and backward reactions of the L12 ↔ DO19 transformation in Fe3Ge. The slow DO19 to L12 transformation leaves behind very stable twins and stacking fault debris. In-situ annealing experiments in the transmission electron microscope revealed that nucleation for the reverse L12 to DO19 reaction takes place efficiently at these defects.

Transmission electron microscope investigation of indentation induced dislocation configurations on the (001) GaSb face

1994 ◽  
Vol 209 (3) ◽  
Author(s):  
J. Doerschel
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Room Temperature ◽  
Stacking Faults ◽  
Electron Microscope Investigation ◽  
Partial Dislocations ◽  
Transmission Electron ◽  
Induced Dislocation

AbstractDislocation configurations induced by room temperature microindentations on the (001) face of GaSb (undoped and Te-doped) have been studied using high voltage transmission electron microscopy. Perfect and partial dislocations could be found in all four arms of the dislocation rosette around the indent. Microtwins and rarely single stacking faults are associated with the partials. Contrary to other binary III–V compounds, an “inverse” glide prism along the [1[unk]0]/[[unk]10] rosette arms is created and it is bounded by {111}

Dislocation Annihilation in L12 Alloys

1994 ◽  
Vol 364 ◽  
Author(s):  
Xiaoli Shi ◽  
Georges Saada ◽  
Patrick VeyssiÈre Lem
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Room Temperature ◽  
Antiphase Boundary ◽  
Tube Formation ◽  
Stacking Fault ◽  
Deformation Microstructure ◽  
Permanent Strain ◽  
Transmission Electron ◽  
Dislocation Annihilation

AbstractA transmission electron microscope (TEM) study of dislocation reactions that take place during the first few percents of permanent strain at room temperature is presented. The nature of the dipolar segments, a noticeable feature within the deformation microstructure, is elucidated. It is determined that antiphase boundary (APB) tube formation is unlikely to stem from the annihilation between a mobile superdislocation and an immobilized Kear-Wilsdorf (KW) configuration, at variance from what has been expected so far. A clear relationship between APB tubes and superlattice stacking fault (SSF) dipoles is pointed out.

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