Transmission electron microscope investigation of indentation induced dislocation configurations on the (001) GaSb face

1994 ◽  
Vol 209 (3) ◽  
Author(s):  
J. Doerschel
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Room Temperature ◽  
Stacking Faults ◽  
Electron Microscope Investigation ◽  
Partial Dislocations ◽  
Transmission Electron ◽  
Induced Dislocation

AbstractDislocation configurations induced by room temperature microindentations on the (001) face of GaSb (undoped and Te-doped) have been studied using high voltage transmission electron microscopy. Perfect and partial dislocations could be found in all four arms of the dislocation rosette around the indent. Microtwins and rarely single stacking faults are associated with the partials. Contrary to other binary III–V compounds, an “inverse” glide prism along the [1[unk]0]/[[unk]10] rosette arms is created and it is bounded by {111}

Dislocations and stacking faults in stainless steel

1957 ◽  
Vol 240 (1223) ◽  
pp. 524-538 ◽  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Stainless Steel ◽  
Grain Boundaries ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Stacking Fault Energy ◽  
Thin Sections ◽  
Partial Dislocations ◽  
Transmission Electron

Further experiments by transmission electron microscopy on thin sections of stainless steel deformed by small amounts have enabled extended dislocations to be observed directly. The arrangement and motion of whole and partial dislocations have been followed in detail. Many of the dislocations are found to have piled up against grain boundaries. Other observations include the formation of wide stacking faults, the interaction of dislocations with twin boundaries, and the formation of dislocations at thin edges of the foils. An estimate is made of the stacking-fault energy from a consideration of the stresses present, and the properties of the dislocations are found to be in agreement with those expected from a metal of low stacking-fault energy.

Transmission Electron Microscope Study of Interfacial Reactions in Gold-Germanium Contact to Gallium Arsenide

1985 ◽  
Vol 54 ◽  
Author(s):  
Taeil Kim ◽  
D.D.L. Chung
Keyword(s):  
Electron Microscopy ◽  
Solid Solution ◽  
Transmission Electron Microscopy ◽  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Electron Microscope Study ◽  
Lattice Match ◽  
Perfect Lattice ◽  
Transmission Electron ◽  
Transmission Electron Microscope Study

ABSTRACTThe structure of 500 Å Au/500 A Ge/500 Å Au/GaAs (100) was studied by transmission electron microscopy after annealing at 350 – 500°C. Annealing at 350 – 450°C caused the formation of AuGeAs with a (110) texture, but this phase disappeared after annealing at 500°C. The hexagonal a-AuGa (or AuGa) was formed after annealing at 400°C, such that (111)Au // (0001)a, and [110]AU // [1120]a and there was perfect lattice match between Au (i.e., Au-rich solid solution) and a-AuGa. After annealing at 450°C or above, a phase tentatively identified as the hexagonal Au3Ga was formed and Ge (i.e., Ge-rich solid solution) became epitaxial to (100) GaAs. Annealing at 400°C caused Au to change from no texture to a (110) texture.

Electron Microscope Investigation of PVD Coated Aluminium Alloy Surface Layer

2012 ◽  
Vol 186 ◽  
pp. 192-197 ◽  
Author(s):  
Tomasz Tański ◽  
Krzysztof Labisz
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Surface Layer ◽  
Electron Microscope ◽  
Aluminium Alloy ◽  
Aluminium Alloys ◽  
Wear Resistant ◽  
Electron Microscope Investigation ◽  
Microscope Investigation ◽  
Transmission Electron

The purpose of this work is electron microscope investigation of the Ti/TiCN/TiAlN and Cr/CrN/CrN coatings deposited by PVD process. The investigations were performed using scanning and transmission electron microscopy for the microstructure determination. By mind of the transmission electron microscopy the high resolution and phase determination was possible to obtain. The morphology was studied as well the lattice parameters for the layer matrix and substrate phase identification using diffraction methods was applied. After the coating of the aluminium alloys AlSi9Cu and AlSi9Cu4 with the selected coatings there are crystallites detected with the size of several tenth of diameter. The investigated samples were examined metallographically using electron microscope with different image techniques, also EDS microanalysis and electron diffraction was made. As an implication for the practice a new layer sequence can be possible to develop, based on PVD technique. Some other investigation should be performed in the future, but the knowledge found in this research shows an interesting investigation direction. The originality and value of this combination of TEM investigation for PVD deposited surface lasers on aluminium alloys makes the investigation very attractive for automotive and other industry branches. Some practical implications and employment of the surface treatment technology for elements, made from tool materials, with the PVD and CVD methods, to obtain the high wear resistant coatings, makes it possible to improve the properties of these materials by – among others – decreasing for example their friction coefficient, microhardness increase, improvement of the tribological contact conditions in practical use. One original value is it also to applied the PVD method on a common material like aluminium alloy. The double layer coatings worked out In the PVD process on the Al0Si-Cu alloys substrate hale the following configuration of the layers: bottom layer/gradient layer/wear resistant hard surface layer.

High Resolution Transmission Electron Microscopy of Proton Implanted Gallium Arsenide

1985 ◽  
Vol 46 ◽  
Author(s):  
D. K. Sadana ◽  
J. M. Zavada ◽  
H. A. Jenkinson ◽  
T. Sands
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Phenomenological Model ◽  
Room Temperature ◽  
Stacking Faults ◽  
High Dose ◽  
Cross Sectional ◽  
Projected Range ◽  
Transmission Electron

AbstractHigh resolution transmission electron microscopy (HRTEM) has been performed on cross-sectional specimens from high dose (1016 cm−2) H+ implanted (100) GaAs (300 keV at room temperature). It was found that annealing at 500°C created small (20-50Å) loops on {111} near the projected range (Rp)(3.2 μm). At 550-600°C, voids surrounded by stacking faults, microtwins and perfect dislocations were observed near the Rp. A phenomenological model explaining the observed results is proposed.

The Observations on Faulted Dipoles in Deformed Tial—Based Alloys

1994 ◽  
Vol 364 ◽  
Author(s):  
Y. Gao ◽  
J. Zhu ◽  
Q. G. Cai
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Plastic Deformation ◽  
Low Temperature ◽  
Deformation Temperature ◽  
Room Temperature ◽  
Single Phase ◽  
Deformation Structure ◽  
Partial Dislocations ◽  
Transmission Electron

AbstractThe deformation structure of polycrystalline TiAl-based alloys after uniaxial compression at temperature range from 77K to 1073K has been examined using transmission electron microscopy. It was observed that a large number of faulted dipoles are commonly present in deformation structure of the alloys compressed at low temperature 77K and room temperature. The nature of the faulted dipoles has been determined to be intrinsic stacking fault lying on {111} plane, bounded by 1/6<112] partial dislocations. A possible mechanism for the formation of the faulted dipoles was suggested. The results of the statistic observation shows that faulted dipoles in deformed Ti-48A1 and Ti-(47–48) Al-X (X = V,Cr,Mn) alloys are less than those in single phase Ti-52A1 alloy, and the number of the faulted dipoles decreases with increasing deformation temperature. The effect of the faulted dipoles on plastic deformation of the alloy was discussed.

Observations of Defect Generation at Stacking Faults in Boron Diffused and Oxidized Silicon Films

1973 ◽  
Vol 31 ◽  
pp. 128-129 ◽  
Author(s):  
A. G. Cullis ◽  
D. M. Maher ◽  
C. M. Hsieh
Keyword(s):  
Electron Microscope ◽  
Oxide Layer ◽  
Silicon Wafer ◽  
Transmission Electron Microscope ◽  
Defect Formation ◽  
Stacking Faults ◽  
Epitaxial Silicon ◽  
Partial Dislocations ◽  
Substrate Side ◽  
Transmission Electron

Recently, the transmission electron microscope (TEM) has been used to study the formation and geometry of defect colonies in annealed and quenched silicon and in thermally oxidized and boron diffused silicon. The purpose of the present study was to examine subsidiary defect formation which can occur during the climb of Frank partial dislocations bounding stacking faults in boron diffused and subsequently thermally oxidized silicon. In these experiments, a {001} epitaxial silicon wafer (n-type, 1Ω−cm) was boron diffused (to 5×1018/cm3), and then steam oxidized for 2 hr at 1050°C. Prior to oxidation the wafer was cleaned using HF as a last step. After oxidation the oxide layer was first removed and then specimens from the wafer were chemically thinned from the substrate side for TEM observations (200 kV).

Preparation of Helminths For Scanning Electron Microscopy

1973 ◽  
Vol 31 ◽  
pp. 438-439
Author(s):  
Robert W. Weise
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Room Temperature ◽  
Parasitic Nematodes ◽  
Live Animal ◽  
Transmission Electron ◽  
Critical Point Drying ◽  
Scanning Electron

The role that scanning electron microscopy (SEM) is playing in descriptive helminthology is becoming more apparent in the literature. However, the majority of papers on the SEM of helminths have used conventional or modified light microscope techniques of fixation and dehydration, and not established SEM techniques in which freeze- and critical point-drying are routinely used. The present investigation was undertaken to examine the applicability of modified scanning and transmission electron microscope techniques for the preparation of certain helminths for SEM.Method I.– Live animal-parasitic nematodes were fixed in 6% phosphate buffered glutaraldehyde for 24 hr at room temperature.

Transmission Electron Microscopy study of lead sulfide whiskers

1989 ◽  
Vol 47 ◽  
pp. 444-445
Author(s):  
S.A. Mansour ◽  
R. Scholz
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Lead Sulfide ◽  
Carbon Film ◽  
Flame Temperature ◽  
High Resolution Electron Microscopy ◽  
Spiral Coil ◽  
Transmission Electron

This paper describes a transmission electron microscopy (TEM) study of the structure and growth mechanism of lead sulfide (PbS) whiskers. PbS whiskers were grown inside the stainless steel nozzle of a kerosene burner. The nozzle had a 0.5 mm aperture, and was fitted with an Al-spiral coil to filter kerosene impurities. The burner was operated continuously for four weeks at a kerosene pressure of 2-3 bars and a flame temperature of about 350°C before the nozzle clogged. A thick black deposit of fine PbS whiskers was found inside the nozzle.TEM specimens were prepared by ultrasonically suspending the fine black powder in alcohol. The suspended particles were deposited on a perforated carbon film supported on a copper grid, and examined with a JEM-1200EX transmission electron microscope operated at 120kV accelerating voltage. A JEM-4000EX transmission electron microscope was used for high resolution electron microscopy.Fig. 1. shows an EM micrograph of typical PbS whiskers. Each appears to have a high-contrast core encapsulated in a lower contrast shell. The electron diffraction pattern of a single whisker protruding over a hole in the carbon film is shown in Fig. 2.

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