Nanocrystalline Silicon Films with High Conductivity Prepared by Hot Wire Chemical Vapor Deposition

2012 ◽  
Vol 152-154 ◽  
pp. 513-518
Author(s):  
Chueh Yang Liu ◽  
Yao Ting Yun ◽  
Ping Chen Hsieh ◽  
Jen Ken Hsu ◽  
Shui Yang Lien
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Optical Band Gap ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Dark Conductivity ◽  
Hot Wire ◽  
P Type ◽  
Doping Ratio

Nanocrystalline silicon (nc-Si:H) grown by hot-wire chemical vapor deposition (HWCVD). We report on the effects of B2H6 doping ratio on the microstructural and optoelectrical properties of the p-type nc-Si:H thin films grown by HWCVD at low substrate temperature of 200 °C. An attempt has been made to elucidate the boron doping mechanism of the p-type nc-Si:H thin films deposited by HWCVD and the correlation between the B2H6 ratio, crystalline volume fraction, optical band gap and dark conductivity. Characterization of these films from Raman spectroscopy revealed that the high conductive film consists of mixed phase of nanocrystalline silicon embedded in an amorphous network. A small increase in B2H6 doping ratio showed marked effect on film microstructure. At the optimal condition, high dark conductivity (8 S/cm) with high optical band gap (~2.0 eV) was obtained.

Effect of Boron Doping on Microcrystalline Germanium Carbon Thin Films

2007 ◽  
Vol 989 ◽  
Author(s):  
Yasutoshi YASHIKI ◽  
Seiichi KOUKETSU ◽  
Shinsuke MIYAJIMA ◽  
Akira YAMADA ◽  
Makoto KONAGAI
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Boron Doping ◽  
Dark Conductivity ◽  
Hot Wire ◽  
Boron Doped ◽  
Vapor Deposition Technique ◽  
Type C ◽  
P Type

AbstractEffects of boron doping on microcrystalline germanium carbon alloy (μc-Ge1-xCx:H) thin films have been investigated. We deposited boron-doped p-type μc-Ge1-xCx:H thin films by hot-wire chemical vapor deposition technique using hydrogen diluted monomethylgermane (MMG) and diborane (B2H6). A dark conductivity of 1.3 S/cm and carrier concentration of 1.7 x 1020 cm-3 were achieved with B2H6/MMG ratio of 0.1. Furthermore, the activation energy decreased from 0.37 to 0.037 eV with increasing B2H6/MMG ratio from 0 to 0.1. We also fabricated p-type μc-Ge1-xCx:H/n-type c-Si heterojunction diodes. The diodes showed rectifying characteristics. The typical ideality factor and rectifying ratio were 1.4 and 3.7 x 103 at ¡Ó 0.5 V, respectively.

Role of argon in hot wire chemical vapor deposition of hydrogenated nanocrystalline silicon thin films

2011 ◽  
Vol 519 (11) ◽  
pp. 3501-3508 ◽  
Author(s):  
N.A. Bakr ◽  
A.M. Funde ◽  
V.S. Waman ◽  
M.M. Kamble ◽  
R.R. Hawaldar ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Hot Wire ◽  
Silicon Thin Films

Effect of HCl addition on the properties of p-type silicon thin films during hot-wire chemical vapor deposition

2013 ◽  
Vol 54 ◽  
pp. 85-90 ◽  
Author(s):  
Sang-Hoon Lee ◽  
Yung-Bin Chung ◽  
Sung-Soo Lee ◽  
Jae-Soo Jung ◽  
Nong-Moon Hwang
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Type Silicon ◽  
Silicon Thin Films ◽  
P Type

Doping of amorphous and microcrystalline silicon films by hot-wire CVD and RFPECVD at low substrate temperatures on plastic substrates

2000 ◽  
Vol 609 ◽  
Author(s):  
P. Alpuim ◽  
V. Chu ◽  
J.P. Conde
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Type A ◽  
Dark Conductivity ◽  
Rf Plasma ◽  
Hot Wire ◽  
Silicon Thin Films ◽  
P Type ◽  
Substrate Temperatures

ABSTRACTDeposition of n and p-type amorphous (a-Si:H) and microcrystalline (µc-Si:H) silicon thin films on polyethylene terephthalate (PET) at substrate temperatures (Tsub) of 100°C and 25°C (RT) prepared by hot-wire (HW) chemical vapor deposition and radio-frequency (RF) plasma-enhanced chemical vapor deposition is studied as a function of hydrogen dilution. Doping is achieved by addition of phosphine (ntype) and diborane (p-type) to the gas phase reactive mixture. At Tsub=100°C, n-type a-Si:H is obtained by HW with dark conductivity σd10−4 ω−1cm−1 and by RF with σd~10−3 ω−1cm−1. P-type a-Si:H is obtained by HW with σd=8×10−7 ω−1cm−1 and by RF with σd=6×10−7 ω−1cm−1. Decreasing the temperature of deposition to 25°C decreases the sd of RF n-type amorphous samples to 5×10−5 ω−1cm−1 but the σd of p-type samples remains unchanged. RT HW a-Si:H films show a decrease of sd both for ntype film (σd=4×10−6 ω−1cm−1) and p-type film (σd=1.2×10−7 ω−1cm−1). N-type µc-Si:H was obtained by HW with σd=7×10−2 ω−1cm−1 and by RF with σd>10−2 ω−1cm−1 at 100°C. Using the same Tsub, p-type µc-Si:H was deposited by HW and by RF with σd~0.5 ω−1cm−1. At RT, only p-type µc-Si:H films could be prepared using HW (σd~1 ω−1cm−1) and RF (σd=4×10−3 ω−1cm−1). The structural properties of the films were studied using Raman spectroscopy. The structural and transport properties were correlated.

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