Electrical Properties in Cvd Diamond Films

1993 ◽  
Vol 302 ◽  
Author(s):  
S. Zhao ◽  
K.K. Gan ◽  
H. Kagan ◽  
R. Kass ◽  
R. Malchow ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Carrier Mobility ◽  
Average Distance ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Time Resolved ◽  
Chemical Vapor Deposited ◽  
Natural Type ◽  
Cvd Diamond Film

ABSTRACTThe electrical properties associated with carrier mobility, μ, and lifetime, τ, have been investigated for the chemical vapor deposited (CVD) diamond films using charged particle-induced conductivity and time resolved transient photo-induced conductivity. The collection distance, d, the average distance which electron and hole depart when driven by an applied electric field E, was measured by both methods. The collection distance is related to the carrier mobility and lifetime by d = μEτ Our measurements show that the collection distance increases linearly with sample thickness for CVD diamond films. The collection distance at the growth side of the CVD diamond film is comparable to that of single crystal natural type IIa diamond; at the substrate side of the film, the collection distance is near zero. No saturation of the collection distance is observed for film thickness up to 500 microns.

Crystalline perfection of chemical vapor deposited diamond films

1990 ◽  
Vol 5 (8) ◽  
pp. 1591-1594 ◽  
Author(s):  
A. V. Hetherington ◽  
C. J. H. Wort ◽  
P. Southworth
Keyword(s):  
Grain Boundaries ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Stacking Faults ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Growth Conditions ◽  
Crystalline Perfection ◽  
Planar Defects ◽  
Chemical Vapor Deposited

The crystalline perfection of microwave plasma assisted chemical vapor deposited (MPACVD) diamond films grown under various conditions has been examined by TEM. Most CVD diamond films thus far reported contain a high density of defects, predominantly twins and stacking faults on {111} planes. We show that under appropriate growth conditions, these planar defects are eliminated from the center of the crystallites, and occur only at grain boundaries where the growing crystallites meet.

Fabrication of Planar Diamond Electron Emitters for Flat Panel Displays

1999 ◽  
Vol 558 ◽  
Author(s):  
H. Kawamura ◽  
S. Kato ◽  
T. Maki ◽  
T. Kobayashi
Keyword(s):  
Electron Emission ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Driving Voltage ◽  
Effective Work ◽  
Chemical Vapor Deposited ◽  
Low Threshold ◽  
Electron Emitters ◽  
Planar Electron

ABSTRACTA planar electron emitter was fabricated employing chemical vapor deposited (CVD) diamond thin films. This device is composed of CVD diamond films selectively deposited on a pair of patterned Au/Cr films separated 2 micrometers from each other. When the driving voltage (Vd) was applied between the Au/Cr films, the extremely low threshold emission from diamond film was observed (Vd ∼ 10 V). Furthermore, by applying high voltage on anode screen placed above this device, part of emitted current was drawn to the anode and the luminescence from phosphors was clearly seen under Vd = 50V. The mechanism of electron emission from the diamond films used in this device was also discussed by comparing with the electron emission from isolated diamond particles. It was found that the effective work functions differ between the isolated particles and the continuous films. This result suggests a difference in the emission site of electrons.

Influence of the deposition conditions on the elastic properties of chemical vapor deposited (CVD) diamond films studied by laser ultrasonics

1999 ◽  
Vol 105 (2) ◽  
pp. 1229-1229
Author(s):  
Kris Van de Rostyne ◽  
Christ Glorieux ◽  
Weimin Gao ◽  
Walter Lauriks ◽  
Jan Thoen ◽  
...  
Keyword(s):  
Elastic Properties ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Laser Ultrasonics ◽  
Chemical Vapor Deposited ◽  
Deposition Conditions

Deposition and Application of CVD Diamond Film on the Interior-Hole Surface of Shaped-Wire Drawing Die

2012 ◽  
Vol 217-219 ◽  
pp. 1022-1027
Author(s):  
Liu Jin Bian ◽  
Zi Chao Lin ◽  
Fang Hong Sun ◽  
Song Shou Guo
Keyword(s):  
Surface Quality ◽  
Diamond Film ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Wire Drawing ◽  
Drawing Die ◽  
Before And After ◽  
Cvd Diamond Film ◽  
Drawing Dies

Abstract：The shaped-wire drawing dies are used more and more popularly in the metal product industry for several advantages of locked structure. In present investigation, a layer of CVD diamond film is deposited on the interior-hole surface of shaped-wire drawing die using a hot filament chemical vapor deposition (HFCVD) method, followed by a surface polishing process, aiming at further prolonging its working lifetime of shaped-wire drawing dies and improving the surface quality of produced wires. The scanning electron microscopy (SEM), surface profiler and Raman spectroscopy are adopted to present the characterization of both as-deposited CVD diamond films before and after polishing. Furthermore, the performance of as-fabricated CVD diamond coated drawing dies is examined in the practical production process. The results show that as-deposited CVD diamond films are homogeneous and the working surface is smoother after polishing. Comparing with the conventional shaped drawing dies, the working lifetime of the diamond coated shaped-wire drawing dies can be increased by a factor of above 10, and the shaped wires with higher surface quality can be obtained.

Effect of Oxygen on CVD Diamond Film Deposition

2012 ◽  
Vol 482-484 ◽  
pp. 891-894
Author(s):  
Yuan Sheng Huang ◽  
Cheng Ping Luo ◽  
Wan Qi Qiu
Keyword(s):  
Oxygen Content ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Film Deposition ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
Cvd Diamond Film ◽  
Effect Of Oxygen

CVD diamond films were synthesized by the chemical vapor deposition method. With increasing the oxygen content in the deposition atmosphere, the density of diamond nuclei decreases. No diamond is formed when the oxygen content is more than one percent. The density of diamond nuclei is improved with increasing the methane content. Adding oxygen to the deposition atmosphere can enhance the purity of diamond.

Selective Growth of B-Doped Diamond on Si-Doped Diamond Film

2012 ◽  
Vol 217-219 ◽  
pp. 1013-1017
Author(s):  
Y.X. Cui ◽  
B. Shen ◽  
F.H. Sun ◽  
Z.M. Zhang
Keyword(s):  
Diamond Film ◽  
Sacrificial Layer ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Selective Area ◽  
Si Doped ◽  
Cvd Diamond Film ◽  
Hot Filament ◽  
Area Deposition

Si doped CVD diamond films are prepared on Si substrate by means of hot filament chemical vapor deposition (HFCVD) through adding tetraethoxysilane (TEOS) into acetone as source of reactant gas during the growth process. The samples of diamond films are investigated by scanning electron micrograph (SEM), Raman spectrum, X-ray diffractometry (XRD) and surface profiler. The experimental results show that compared with pure diamond film, Si doped CVD diamond film exhibits grain refinement and smoother surface. Then selective area deposition (SAD) of B-doped diamond films are achieved on both Si doped CVD diamond film and pure CVD diamond film with silicon dioxide layer as sacrificial layer. SEM investigation demonstrates that the boundary of patterning on pure diamond film is rather fuzzy while on pure diamond film it is trim and distinct, which is mainly attributed to the relatively low surface roughness.

Study on EDM Polishing of CVD Diamond Films

2006 ◽  
Vol 315-316 ◽  
pp. 464-468 ◽  
Author(s):  
Wen Zhuang Lu ◽  
Dun Wen Zuo ◽  
Min Wang ◽  
Feng Xu ◽  
Xiang Feng Li
Keyword(s):  
Diamond Film ◽  
Discharge Current ◽  
Material Removal ◽  
Diamond Films ◽  
Film Surface ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Machined Surface ◽  
Cvd Diamond Film ◽  
Pulse On Time

Chemical vapor deposition (CVD) diamond is known for its superior characteristics such as hardness, toughness and wear resistance. However, due to these factors, machining CVD diamond is a difficult material removal process. A new technique to polish CVD diamond film efficiently is reported in the present paper. In the CVD deposition process, boron was doped into diamond to fabricate high-quality semi-conductive film, which make it possible to machine diamond film by electro discharged machining (EDM) method. The relationship between EDM parameter and removal processing was investigated in details. The machined surface of boron doped (B-doped) diamond films was studied by Scanning Electron Microscope (SEM) and Raman Scattering Spectroscopy (Raman). The experimental results show that EDM polishing is a highspeed material removal and low cost method for CVD diamond polishing. When the discharge current and pulse-on time increase in a certain range, the cutting-off speed and roughness will increase correspondingly. The roughness of EDM polished CVD diamond film surface is Ra<0.5μm when the discharge current is at 4A and pulse-on time is at 200μs.

TEM cathodoluminescence of chemical vapor deposited diamond

1990 ◽  
Vol 48 (4) ◽  
pp. 620-621
Author(s):  
R.J. Graham ◽  
Mark M. Disko ◽  
T.D. Moustakas
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Tungsten Filament ◽  
Electronic Information ◽  
Wear Resistant Coatings ◽  
Chemical Vapor Deposited ◽  
Potential Applications

Diamond films grown by chemical vapor deposition (CVD) are curently of great interest with potential applications in semiconductors and as wear resistant coatings. In order to understand and optimize the growth and properties of these films, it is necessary to characterize their microstructure. While such techniques as TEM and cathodoluminescence (CL) (in a SEM) can be used independently to provide microstructural and optical/electronic information respectively, the direct correlation of these two pieces of information is highly desirable. This is possible using the TEM CL technique (CL in a TEM) because the electron transparent specimen allows a direct comparison of CL with microstructure. The preliminary results obtained for CVD diamond films by this technique are presented here.The films examined were grown on a silicon (100) substrate by filament assisted CVD from a mixture of methane (2% vol.) and hydrogen at a pressure of 30 torr, using a tungsten filament operated at 1800°C.

ChemInform Abstract: A Study of Stress in Microwave Plasma Chemical Vapor Deposited Diamond Films Using X-Ray Diffraction.

ChemInform ◽  
2010 ◽  
Vol 28 (32) ◽  
pp. no-no
Author(s):  
M. S. HAQUE ◽  
H. A. NASEEM ◽  
A. P. MALSHE ◽  
W. D. BROWN
Keyword(s):  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Plasma Chemical ◽  
X Ray ◽  
Chemical Vapor Deposited
Sign in / Sign up

Export Citation Format

Share Document