Study of the Machining Principle and Influencing of ELID Grinding on SiC

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.217-219.1642 ◽

2012 ◽

Vol 217-219 ◽

pp. 1642-1645

Author(s):

Qiang Xiao

Keyword(s):

Single Crystal ◽

High Efficiency ◽

Machining Time ◽

Elid Grinding

The hardness of SiC single crystal is very closer to that of diamond, which makes it greatly difficult to process SiC single crystal. It is usually machined by lapping, but this technique requires a long machining time, resulting in low productivity, So we examine the possibility of ELID grinding in SiC single crystal. Results show that with the use of ELID, mirror surfaces can be achieved with high efficiency.

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The Abrasion Mechanism of a Diamond Grinding Wheel with Resin Cured by Ultraviolet Light

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.809-810.21 ◽

2015 ◽

Vol 809-810 ◽

pp. 21-26 ◽

Cited By ~ 1

Author(s):

Qiu Yun Huang ◽

Lei Guo ◽

Ioan Marinescu

Keyword(s):

Energy Cost ◽

High Efficiency ◽

Surface Profile ◽

Diamond Wheel ◽

Grinding Wheel ◽

Experimental Setting ◽

Machining Time ◽

A Value ◽

Small Grains ◽

Abrasive Tools

Ultraviolet-cured resin bond, abrasive tools have been studied and have proven to have substantial advantages over conventional abrasive tools, not only in low energy cost and high efficiency when manufacturing the tool itself, but also in better performance when machining some materials [1,2]. However, very little research has been done to study the mechanism of UV cured abrasive tools. Nevertheless, many researchers have investigated the performances of such tools compared with some conventional tools. A mechanism of UV cured, resin bond, diamond wheel was proposed as the hybrid of grinding and lapping, which is called as grind/lap (G/L) process [3]. In the paper, the proposed mechanism was verified by comparing the experimental results of three processes. Three wheels were used to simulate grinding, lapping and grind/lapping operation separately under the same experimental setting. The results showed that the RA obtained by G/L wheel decreased to a value between those gained by grinding and lapping operations after 10 minutes and it became the lowest of the three as time increases. The RA and MRR of three processes indicated that at the beginning of operation, the abrasives in G/L wheel are fixed by the cured resin, and as machining time increases, the small grains get released from the wheel and act as loose abrasives. Therefore, the mechanism of the UV cured resin bond diamond wheel is verified as the dominant grinding at the beginning and lapping at the end, which was also illustrated by the surface profile of machined part.

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High-Efficiency High-Repetition-Rate Gain-Switched Operation Around 3 μm in Cr2+:CdSe Single-Crystal Laser Pumped by Fiber-Laser-Pumped Ho3+:YAG Laser at 2.1 μm

2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) ◽

10.1109/cleoe-eqec.2019.8872155 ◽

2019 ◽

Author(s):

Oleg Antipov ◽

Ilya Eranov ◽

Mikhail Frolov ◽

Yuri Korostelin ◽

Vladimir Kozlovsky ◽

...

Keyword(s):

Single Crystal ◽

Fiber Laser ◽

Repetition Rate ◽

High Efficiency ◽

High Repetition Rate ◽

Yag Laser ◽

High Repetition ◽

Crystal Laser

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Tem Observations of Interfacial Defects in Mocvd GaAs on Single Crystal Ge Substrates

Microscopy and Microanalysis ◽

10.1017/s1431927600023254 ◽

1998 ◽

Vol 4 (S2) ◽

pp. 626-627

Author(s):

K.M. Jones ◽

M.M. Al-Jassim ◽

J.M. Olson

Keyword(s):

Thermal Expansion ◽

Solar Cell ◽

Physical Properties ◽

Single Crystal ◽

High Efficiency ◽

Lattice Parameter ◽

High Quality ◽

Stages Of Growth ◽

Interfacial Defects ◽

Microstructural Defects

The growth of high quality GaAs layers on single crystal Ge substrates has attracted a great deal of interest in recent years. Currently under development at NREL is the GaAs/GalnP-on-Ge high efficiency multi-junction solar cell. Unlike other heteroepitaxial systems such as GaAs-on-Si, physical properties such as the lattice parameter and thermal expansion coefficient of the Ge and GaAs are much closer. Further, Ge has a bandgap of 0.7 eV that makes it a suitable bottom cell in a multi-junction stack. However, the growth of GaAs on Ge is not a straightforward process, and little is known about the Ge surface and the nucleation of GaAs on Ge in the MOCVD environment. In this study, TEM results show that a number microstructural defects are associated with the Ge/GaAs interface and the initial stages of growth.

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Radially oriented mesoporous TiO2 microspheres with single-crystal–like anatase walls for high-efficiency optoelectronic devices

Science Advances ◽

10.1126/sciadv.1500166 ◽

2015 ◽

Vol 1 (4) ◽

pp. e1500166 ◽

Cited By ~ 89

Author(s):

Yong Liu ◽

Renchao Che ◽

Gang Chen ◽

Jianwei Fan ◽

Zhenkun Sun ◽

...

Keyword(s):

Single Crystal ◽

Mesoporous Materials ◽

High Performance ◽

High Efficiency ◽

Dye Sensitized Solar Cells ◽

Building Blocks ◽

Accessible Surface Area ◽

Photoelectric Conversion Efficiency ◽

Photoelectric Conversion ◽

Assembly Method

Highly crystalline mesoporous materials with oriented configurations are in demand for high-performance energy conversion devices. We report a simple evaporation-driven oriented assembly method to synthesize three-dimensional open mesoporous TiO2 microspheres with a diameter of ~800 nm, well-controlled radially oriented hexagonal mesochannels, and crystalline anatase walls. The mesoporous TiO2 spheres have a large accessible surface area (112 m2/g), a large pore volume (0.164 cm3/g), and highly single-crystal–like anatase walls with dominant (101) exposed facets, making them ideal for conducting mesoscopic photoanode films. Dye-sensitized solar cells (DSSCs) based on the mesoporous TiO2 microspheres and commercial dye N719 have a photoelectric conversion efficiency of up to 12.1%. This evaporation-driven approach can create opportunities for tailoring the orientation of inorganic building blocks in the assembly of various mesoporous materials.

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