Growth of CuInGaSe2 Films by RF Sputtering Using CuInGaSe2 Single Phase Target

2013 ◽  
Vol 372 ◽  
pp. 571-574
Author(s):  
Kenji Yoshino ◽  
Takahiro Tokuda ◽  
Akira Nagaoka ◽  
Kenichiro Miseki ◽  
Rie Mori ◽  
...  
Keyword(s):  
Room Temperature ◽  
Single Phase ◽  
Rf Sputtering ◽  
Diffraction Peak ◽  
Secondary Phases ◽  
X Ray Diffraction ◽  
High Quality ◽  
Homogeneous Surface ◽  
X Ray

CuIn0.8Ga0.2Se2 thin film is grown at room temperature by RF sputtering using high quality of CuIn0.8Ga0.2Se2 single phase target. A (112) diffraction peak is dominant with no secondary phases such as selenide materials in the X-ray diffraction pattern. A flat and homogeneous surface can be obtained in the sample.

High Quality GaP Growth on Si Substrates By Mocvd

1988 ◽  
Vol 116 ◽  
Author(s):  
K. Uchida ◽  
Y. Kohama ◽  
M. Tajima ◽  
T. Soga ◽  
T. Jimbo ◽  
...  
Keyword(s):  
Mass Spectroscopy ◽  
Diffraction Peak ◽  
Crystal Quality ◽  
X Ray Diffraction ◽  
High Quality ◽  
Double Crystal ◽  
X Ray ◽  
Si Substrates ◽  
Secondary Ion

AbstractGaP crystals are grown on Si substrates by MOCVD. Double crystal X-ray diffraction indicates that the crystal quality of GaP layers greatly improves when AsH3 is supplied before growth. The FWHM of (400) diffraction peak of the GaP layer decreases as the thickness increases and the best FWHM of 112.5 arcs is obtained at a thickness of 5 μm. The GaP/Si interface is characterized using secondary ion mass spectroscopy (SIMS) to demonstrate the effect of AsH3.

The Effect of Low Temperature GaAs Nucleation on the Growth of GaN on Silicon (001) During MOVPE Process

1997 ◽  
Vol 482 ◽  
Author(s):  
L. X. Zheng ◽  
J. W. Liang ◽  
H. Yang ◽  
J. B. Li ◽  
Y. T. Wang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Room Temperature ◽  
Atomic Layer ◽  
X Ray Diffraction ◽  
High Quality ◽  
Nucleation Layer ◽  
X Ray ◽  
Cubic Gan ◽  
Low Temperature Gaas

AbstractHigh quality cubic GaN was grown on Silicon (001) by metalorganic vapor phase epitaxy (MOVPE) using a GaAs nucleation layer grown at low temperature. The influence of various nucleation conditions on the GaN epilayers' quality was investigated. We found that the GaAs nucleation layer grown by atomic layer epitaxy (ALE) could improve the quality of GaN films by depressing the formation of mixed phase. Photoluminescence (PL) and X-ray diffraction were used to characterize the properties of GaN epilayers. High quality GaN epilayers with PL full width at half maximum (FWHM) of 130meV at room temperature and X-ray FWHM of 70 arc-min were obtained by using 10–20nm GaAs nucleation layer grown by ALE.

Impedance Spectroscopy Study of LiTaO3 Powder Synthesized via Sol-Gel Method

2012 ◽  
Vol 545 ◽  
pp. 275-278 ◽  
Author(s):  
Lili Widarti Zainuddin ◽  
Norlida Kamarulzaman
Keyword(s):  
Room Temperature ◽  
Single Phase ◽  
Sol Gel ◽  
Rhombohedral Structure ◽  
Spectroscopy Study ◽  
X Ray Diffraction ◽  
Gel Method ◽  
X Ray ◽  
Sol Gel Method ◽  
Impedance Spectroscopy Study

A ceramics sample of LiTaO3 was prepared using a sol-gel method. The sample is annealed at 750 °C for 48 hours. X-ray diffraction analysis indicate the formation of single phase, rhombohedral structure. An ac impedance study was used to analyse the conductivity of LiTaO3 at room temperature and at various temperatures.

scholarly journals Equimolar Yttria-Stabilized Zirconia and Samaria-Doped Ceria Solid Solutions

Ceramics ◽  
2018 ◽  
Vol 1 (2) ◽  
pp. 343-352 ◽  
Author(s):  
Reginaldo Muccillo ◽  
Daniel de Florio ◽  
Eliana Muccillo
Keyword(s):  
Tetragonal Phase ◽  
Room Temperature ◽  
Single Phase ◽  
Rietveld Analysis ◽  
X Ray Diffraction ◽  
Ceramic Powders ◽  
Stabilized Zirconia ◽  
X Ray ◽  
Ceria Solid Solutions ◽  
Attrition Milling

Compositions of (ZrO2)0.92(Y2O3)0.08 (zirconia: 8 mol % yttria—8YSZ) and (CeO2)0.8(Sm2O3)0.2 (ceria: 20 mol % samaria—SDC20) ceramic powders were prepared by attrition milling to form an equimolar powder mixture, followed by uniaxial and isostatic pressing. The pellets were quenched to room temperature from 1200 °C, 1300 °C, 1400 °C and 1500 °C to freeze the defects configuration attained at those temperatures. X-ray diffraction analyses, performed in all quenched pellets, show the evolution of the two (8YSZ and SDC20) cubic fluorite structural phases to a single phase at 1500 °C, identified by Rietveld analysis as a tetragonal phase. Impedance spectroscopy analyses were carried out in pellets either quenched or slowly cooled from 1500 °C. Heating the quenched pellets to 1000 °C decreases the electrical resistivity while it increases in the slowly cooled pellets; the decrease is ascribed to annealing of defects created by lattice micro-tensions during quenching while the increase to partial destabilization of the tetragonal phase.

scholarly journals Structure and electric properties of cerium substituted SrBi1.8Ce0.2Nb2O9 and SrBi1.8Ce0.2Ta2O9 ceramics

2016 ◽  
Vol 10 (3) ◽  
pp. 183-188 ◽  
Author(s):  
Mohamed Afqir ◽  
Amina Tachafine ◽  
Didier Fasquelle ◽  
Mohamed Elaatmani ◽  
Jean-Claude Carru ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Solid State ◽  
Room Temperature ◽  
Single Phase ◽  
Solid State Reaction Method ◽  
X Ray Diffraction ◽  
Reaction Method ◽  
X Ray ◽  
Lcr Meter ◽  
Curie Temperature Tc

SrBi1.8Ce0.2Nb2O9 (SBCN) and SrBi1.8Ce0.2Ta2O9 (SBCT) powders were prepared via solid-state reaction method. X-ray diffraction analysis reveals that the SBCN and SBCT powders have the single phase orthorhom-bic Aurivillius structure at room temperature. The contribution of Raman scattering and FTIR spectroscopy of these samples were relatively smooth and resemble each other. The calcined powders were uniaxially pressed and sintered at 1250?C for 8 h to obtaine dense ceramics. Dielectric constant, loss tangent and AC conductivity of the sintered Ce-doped SrBi2Nb2O9 and SrBi2Ta2O9 ceramics were measured by LCR meter. The Ce-doped SBN (SBCN) ceramics have a higher Curie temperature (TC) and dielectric constant at TC (380?C and ?? ~3510) compared to the Ce-doped SBT (SBCT) ceramics (330?C and ?? ~115) when measured at 100Hz. However, the Ce-doped SBT (SBCT) ceramics have lower conductivity and dielectric loss.

scholarly journals Ferromagnetic Order in the Intermetallic Alloys laNi5-xMgx

2012 ◽  
Vol 29 (1) ◽  
pp. 50
Author(s):  
D.N Ba ◽  
L.T Tai ◽  
N.T Trung ◽  
N.T Huy
Keyword(s):  
Magnetic Properties ◽  
Curie Temperature ◽  
Room Temperature ◽  
Single Phase ◽  
Chemical Doping ◽  
Intermetallic Alloys ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ferromagnetic Order ◽  
Diffraction Patterns

The influences of the substitution of Ni with Mg on crystallographic and magnetic properties of the intermetallic alloys LaNi5-xMgx (x ≤ 0.4) were investigated. The X-ray diffraction patterns showed that all samples were of single phase, and the lattice parameters, a and c, decreased slightly upon chemical doping. LaNi5 is well known as an exchange-enhanced Pauli paramagnet. Interestingly, in LaNi5-xMgx, the ferromagnetic order existed even with a small amount of dopants; the Curie temperature reached the value of room temperature for x = 0.2, and enhanced with increasing x.

Synthesis and Luminescence Properties of Chalcopyrite-Type CuAlS2

2006 ◽  
Vol 301 ◽  
pp. 177-180 ◽  
Author(s):  
Yuichiro Kuroki ◽  
Tomoichiro Okamoto ◽  
Masasuke Takata
Keyword(s):  
Diffraction Analysis ◽  
Room Temperature ◽  
Single Phase ◽  
Elevated Temperatures ◽  
Emission Peak ◽  
Maximum Intensity ◽  
X Ray Diffraction ◽  
Ultraviolet Emission ◽  
X Ray ◽  
Copper Aluminum

Copper aluminum disulfide (CuAlS2) powders were synthesized in an evacuated ampoule at elevated temperatures. X-ray diffraction analysis revealed that the powders heated at temperatures higher than 800oC were single-phase CuAlS2. In the cathodoluminescence (CL) spectra measured at room temperature, the powders heated at temperatures higher than 600oC exhibited a visible emission peak at approximately 1.8 eV and a distinct ultraviolet emission peak at 3.45 eV. The powder heated at 700oC showed the maximum intensity of ultraviolet emission which is considered to be associated with excitons.

scholarly journals Cubic InGaN Grown by MOCVD

1999 ◽  
Vol 4 (S1) ◽  
pp. 239-243
Author(s):  
J.B. Li ◽  
Hui Yang ◽  
L.X. Zheng ◽  
D.P. Xu ◽  
Y.T. Wang
Keyword(s):  
Room Temperature ◽  
Emission Peak ◽  
Buffer Layers ◽  
Cubic Phase ◽  
Yellow Luminescence ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Cubic Gan ◽  
Pl Emission

We report on the growth of high-quality cubic phase InGaN on GaAs by MOCVD. The cubic InGaN layers are grown on cubic GaN buffer layers on GaAs (001) substrates. The surface morphology of the films are mirror-like. The cubic nature of the InGaN films is obtained by X-ray diffraction (XRD) measurements. The InGaN layers show strong photoluminescence (PL) at room temperature. Neither emission peak from wurtzite GaN nor yellow luminescence is observed in our films. The highest In content as determined by XRD is about 17% with an PL emission wavelength of 450 nm. The FWHM of the cubic InGaN PL peak are 153 meV and 216 meV for 427 nm and 450 nm emissions, respectively. It is found that the In compositions determined from XRD are not in agreement with those estimated from PL measurements. The reasons for this disagreement are discussed.

High Quality Hydrothermal ZnO Crystals

1998 ◽  
Vol 537 ◽  
Author(s):  
M. Suscavage ◽  
M. Harris ◽  
D. Bliss ◽  
P. Yip ◽  
S.-Q. Wang ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Liquid Helium ◽  
Room Temperature ◽  
Surface Preparation ◽  
Critical Factor ◽  
High Quality ◽  
Rocking Curve ◽  
X Ray ◽  
Oxide Crystals

AbstractZinc Oxide crystals have historically been grown in hydrothermal autoclaves with a basic mineralizer; however, doubts have been raised about the quality of such crystals because they have often exhibited large x-ray rocking curve widths and low photoluminescence (PL) yield with large linewidths. Several ZnO crystals were grown hydrothermally and sliced parallel to the c-plane. This resulted in opposite surfaces (the C+ and C-) exhibiting pronounced chemical and mechanical differences. Different surface treatments were investigated and compared by PL both at room temperature and liquid helium temperatures, and by double axis X-ray rocking curve measurements. The high quality of hydrothermally-grown ZnO is substantiated by the narrow rocking curve widths and sharp PL peaks obtained. A critical factor in obtaining these results was found to be surface preparation.

scholarly journals Growth and Characterization of BxGa1−xN on 6H-SiC (0001) by Movpe

1999 ◽  
Vol 4 (S1) ◽  
pp. 429-434 ◽  
Author(s):  
C. H. Wei ◽  
Z. Y. Xie ◽  
J. H. Edgar ◽  
K. C. Zeng ◽  
J. Y. Lin ◽  
...  
Keyword(s):  
Single Phase ◽  
Band Edge Emission ◽  
Reactant Ratio ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Edge Emission ◽  
X Ray ◽  
Two Phases

Boron was incorporated into GaN in order to determine its limits of solubility, its ability of reducing the lattice constant mismatch with 6H-SiC, as well as its effects on the structural and optical properties of GaN epilayers. BxGa1−xN films were deposited on 6H-SiC (0001) substrates at 950 °C by low pressure MOVPE using diborane, trimethylgallium, and ammonia as precursors. A single phase alloy with x=0.015 was successfully produced at a gas reactant B/Ga ratio of 0.005. Phase separation into pure GaN and BxGa1−xN alloy with x=0.30 was deposited for a B/Ga reactant ratio of 0.01. This is the highest B fraction of the wurtzite structure alloy ever reported. For B/Ga ratio ≥ 0.02, no BxGa1−xN was formed, and the solid solution contained two phases: wurtzite GaN and BN based on the results of Auger and x-ray diffraction. The band edge emission of BxGa1−xN varied from 3.451 eV for x=0 with FWHM of 39.2 meV to 3.465 eV for x=0.015 with FWHM of 35.1 meV. The narrower FWHM indicated that the quality of GaN epilayer was improved with small amount of boron incorporation.

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