Ka-Band Radiation Pattern Reconfigurable Microstrip Patch Antenna Employing MEMS Switches

2013 ◽  
Vol 411-414 ◽  
pp. 1674-1679 ◽  
Author(s):  
Zhong Liang Deng ◽  
Hua Gong ◽  
Sen Fan ◽  
Cai Hu Chen
Keyword(s):  
Resonant Frequency ◽  
Radiation Pattern ◽  
Insertion Loss ◽  
Patch Antenna ◽  
Rf Mems ◽  
Microstrip Patch Antenna ◽  
Mems Switches ◽  
Monolithically Integrated ◽  
Microstrip Patch ◽  
Rf Mems Switches

This article describes the design of a microstrip patch antenna with radiation pattern reconfigurable characteristic, where two monolithically integrated MEMS switches are utilized. By changing the physical dimension of the antenna, its radiation pattern could be changed. Moreover, we present detailed structures of these RF MEMS switches, whose isolation and insertion loss are-23.12 dB and-0.09 dB at operating frequency, respectively. And the resonant frequency of the antenna is 35.4 GHz and the bandwidth is 6.69%. All the results are simulated.

Ka-Band Wideband Pattern Reconfigurable Microstrip Patch Antenna with RF MEMS Switches

2010 ◽  
Vol 39 ◽  
pp. 146-150 ◽  
Author(s):  
Zhong Liang Deng ◽  
Man Zu Hong ◽  
Yi Dong Yao
Keyword(s):  
Patch Antenna ◽  
Rf Mems ◽  
Microstrip Patch Antenna ◽  
Bottom Edge ◽  
Antenna Structure ◽  
Ka Band ◽  
Mems Switches ◽  
Microstrip Patch ◽  
Ansoft Hfss ◽  
Rf Mems Switches

A Ka-band microstip patch antenna with the functions of switchable pattern is presented. The antenna structure is composed of three rectangular patches and four radio frequency microelectro-mechanical system (RF MEMS) switches. The switches are placed to connect the center patch with other two ones, with two switches on the top edge of the center patch and others on the bottom edge. By controlling the states of the RF MEMS switches, the proposed antenna can radiate two patterns. Moreover, the switchable functions are operated at the same frequency band with a bandwidth of 30.9%. Simulated results by Ansoft HFSS are given.

scholarly journals Reconfigurable Antenna using Micromechanical Actuation Switches for K and Ku-Band Applications

2019 ◽  
Vol 9 (2) ◽  
pp. 201-205
Keyword(s):  
Insertion Loss ◽  
Patch Antenna ◽  
Rf Mems ◽  
Reconfigurable Antenna ◽  
Resonant Frequencies ◽  
Mems Switches ◽  
Actuation Mechanism ◽  
Rf Mems Switches ◽  
Mechanical Actuation ◽  
Ku Band

In this paper, we have proposed a reconfigurable antenna using micro mechanical actuation switches for K and Ku-band applications. Overall two identical cantilever micro mechanical switches (S1 & S2 ) are used to design reconfigurable patch antenna. The switches are working by electrostatic actuation mechanism. With the switches, overall the antenna is offering four resonant frequencies based on the switches ON/OFF condition. The Micro mechanical switches are offering an isolation loss of -18.5dB and an insertion loss of -1dB. The switch requires a DC actuation voltages of 6V. The Proposed reconfigurable antenna is resonating at four different frequencies based on the different switching conditions of RF MEMS switches. If S1 & S2 both are ON the antenna is resonating at 16.9GHZ, if S1 -ON & S2 -OFF the antenna is resonating at 47.3GHZ & 59.1GHZ, if S1 -OFF & S2 -ON the antenna is resonating at 28.4GHZ, if S1 -OFF & S2 -OFF the antenna is resonating at 27.9GHZ

scholarly journals Miniaturized Dual-Band Dual-Mode Microstrip Patch Antenna with Defected Ground Structure for Wearable Applications

2021 ◽  
Vol 2 (2) ◽  
Author(s):  
Nur Azura Shamsudin ◽  
◽  
Shaharil Mohd Shah ◽  
Keyword(s):  
Resonant Frequency ◽  
Radiation Pattern ◽  
Human Tissue ◽  
Patch Antenna ◽  
Microstrip Patch Antenna ◽  
Dual Band ◽  
Defected Ground Structure ◽  
Ground Structure ◽  
Dual Mode ◽  
Microstrip Patch

This work presents the performance of a miniaturized dual-band dual-mode microstrip patch antenna with Defected Ground Structure (DGS) at 2.45 GHz and 5.8 GHz on the stacked substrate configuration in the order of FR-4 – PDMS- FR-4. The antenna offers a promising solution for wearable applications in the ISM bands. The first substrate is a flexible Flame Retardant 4 (FR-4) and the other substrate is a highly flexible Polydimethyl Siloxane (PDMS). The size of the antenna was reduced from 50 × 50 mm2 to 30 × 30 mm2, by introducing DGS on the ground plane. A single U-slot on the rectangular radiating patch was introduced to produce the upper resonant frequency of 5.8 GHz while the existing square patch is to generate the lower resonant frequency of 2.45 GHz. The simulations on the dual-band dual-mode microstrip patch antenna shows the reflection coefficient, S11 at 2.45 GHz is -17.848 dB with a bandwidth of 278.8 MHz and -13.779 dB with a bandwidth of 273 MHz at 5.8 GHz. A unidirectional radiation pattern observed in the E-plane shows that the antenna could be applied for off-body communication while an omnidirectional radiation pattern in the H-plane showed that the antenna can be used for on-body communication. Bending investigation were performed for the antenna over a vacuum cylinder with varying diameters of 50 mm, 60 mm, 70 mm, 80 mm, 90 mm, 100 mm and 120 mm in the CST MWS® software. From the graph of reflection coefficients, the performance of the antenna were not affected in bending condition. The SAR simulations showed that the SAR limits obey the guidelines as stipulated by the Federal Communication Commission (FCC) and the International Commission on Non-Ionizing Radiation Protection (ICNIRP) for 1 mW of input power. The 2.45 GHz SAR limit for 1 g of human tissue is 0.09007 W/kg (FCC standard: < 1.6 W/kg) while for 10 g is 0.01867 W/kg (ICNIRP standard: < 2 W/kg). For 5.8 GHz, the SAR limit for 1 g of human tissue is 0.115 W/kg and for 10 g is 0.03517 W/kg. Based on the performance of the antenna in bending condition and the SAR limits, it is safe to conclude that the antenna can be used for wearable applications at 2.45 GHz and 5.8 GHz of the ISM bands.

scholarly journals Microwave Wireless Power Transfer System Based on a Frequency Reconfigurable Microstrip Patch Antenna Array

Energies ◽  
2021 ◽  
Vol 14 (2) ◽  
pp. 415
Author(s):  
Haiyue Wang ◽  
Lianwen Deng ◽  
Heng Luo ◽  
Junsa Du ◽  
Daohan Zhou ◽  
...  
Keyword(s):  
Resonant Frequency ◽  
Antenna Array ◽  
Patch Antenna ◽  
Wireless Power Transfer ◽  
Microstrip Patch Antenna ◽  
Market Demand ◽  
Power Transfer ◽  
Wireless Power ◽  
Microstrip Patch ◽  
Wide Range

The microwave wireless power transfer (MWPT) technology has found a variety of applications in consumer electronics, medical implants and sensor networks. Here, instead of a magnetic resonant coupling wireless power transfer (MRCWPT) system, a novel MWPT system based on a frequency reconfigurable (covering the S-band and C-band) microstrip patch antenna array is proposed for the first time. By switching the bias voltage-dependent capacitance value of the varactor diode between the larger main microstrip patch and the smaller side microstrip patch, the working frequency band of the MWPT system can be switched between the S-band and the C-band. Specifically, the operated frequencies of the antenna array vary continuously within a wide range from 3.41 to 3.96 GHz and 5.7 to 6.3 GHz. For the adjustable range of frequencies, the return loss of the antenna array is less than −15 dB at the resonant frequency. The gain of the frequency reconfigurable antenna array is above 6 dBi at different working frequencies. Simulation results verified by experimental results have shown that power transfer efficiency (PTE) of the MWPT system stays above 20% at different frequencies. Also, when the antenna array works at the resonant frequency of 3.64 GHz, the PTE of the MWPT system is 25%, 20.5%, and 10.3% at the distances of 20 mm, 40 mm, and 80 mm, respectively. The MWPT system can be used to power the receiver at different frequencies, which has great application prospects and market demand opportunities.

Design of RF-MEMS Switch Integration with Circular Microstrip Patch Antenna

2021 ◽  
Author(s):  
K. Srinivasa Rao ◽  
Ch. Gopi Chand ◽  
Reshmi Maity ◽  
N. P. Maity ◽  
K. Girija Sravani
Keyword(s):  
Patch Antenna ◽  
Rf Mems ◽  
Microstrip Patch Antenna ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Microstrip Patch

scholarly journals A Slotted Tri-Band Patch Antenna Embedded on Textured Pin Dielectric Substrate

2019 ◽  
Vol 8 (5S3) ◽  
pp. 21-22
Keyword(s):  
Resonant Frequency ◽  
Surface Waves ◽  
Patch Antenna ◽  
Dielectric Substrate ◽  
Microstrip Patch Antenna ◽  
Radiation Mechanism ◽  
Specific Location ◽  
Frequency Bands ◽  
Microstrip Patch ◽  
Periodic Arrangement

The propagation of surface waves in the microstrip patch antenna proves to be proves to serious hindrance to radiation mechanism of the antenna. The periodic arrangement of shorting pins is embedded in the dielectric substrate at specific location to enhance the gain by around 4-5dB. The slotted perturbations have been done for achieving tri-band characteristics. The antenna is suitable for operation at three resonant frequency bands centered at 2.2421 GHz, 5.7632GHz and 7.7633GHz, which makes it suitable for WLAN applications.

scholarly journals Performance Comparison Of Shunt Rf Mems Switches

2021 ◽  
Vol 12 (5) ◽  
pp. 596-606
Author(s):  
S Girish Gandhi, I Govardhani, M Venkata Narayana, K Sarat Kumar
Keyword(s):  
Comparative Study ◽  
Insertion Loss ◽  
Return Loss ◽  
Rf Mems ◽  
Switching Time ◽  
Performance Comparison ◽  
Mems Switches ◽  
Mems Switch ◽  
Rf Mems Switches ◽  
And Performance

This is an attempt to compare three different shunt configured RF MEMS switches which offers a choice for applications in satellite and antennas. Advanced RF communication domain demands for design and modeling of RF MEMS switch which provides extremely reduced pull-in voltage, better isolation, low insertion loss, and with greater reliability. The proposed work manages with comparison of design modeling and performance of three different shunt configured RF MEMS switches. The proposed shunt configured RF MEMS switches are designed with different dimensions with different meandering techniques with perforations on beam structure helps in reducing the amount of voltage required for actuation of switch which is known as pull-in voltage. Comparative study of three different RF MEMS switches which involves in conducting electromechanical analysis are carried out using COMSOL multi physics tool and electromagnetic analysis are carried out using HFSS tool. Moreover the comparative study involves in comparing the values of pull-in voltage, switching time and capacitance, stress, insertion loss, return loss and isolation of three different RF MEMS switches. Proposed first switch model derives pull-in voltage of 16.9v with the switching time of 1.2µs, isolation of 47.70 dB at 5GHz and insertion loss of 0.0865 dB and return loss of 41.55 dB. Proposed second switch model derives pull-in voltage of 18.5v with the switching time of 2.5µs, isolation of 37.20 dB at 8GHz and insertion loss of 0.1177 dB and return loss of 38.60 dB. Proposed third switch model delivers pull-in voltage of 18.75v with the switching time of 2.56µs, isolation of 44.1552 dB at 8GHz and insertion loss of 0.0985 dB and return loss of 42.1004 dB.

Sign in / Sign up

Export Citation Format

Share Document