Design of Quantum Communication Broadband Amplifier Based on Photoelectric Diode

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.539.169 ◽

2014 ◽

Vol 539 ◽

pp. 169-172

Author(s):

Yi Zhen Nie

Keyword(s):

Quantum Optics ◽

Quantum Communication ◽

Low Noise ◽

Low Noise Amplifier ◽

Gain Bandwidth ◽

Factors Affecting ◽

Photoelectric Detector ◽

Broadband Amplifier ◽

Noise Amplifier ◽

Feedback Resistor

according to the special requirements of quantum optics experiments, through the optimum design of broadband low noise amplifier circuit, this paper developed a broadband low noise photoelectric detector. We focus on the analysis of the factors affecting the photoelectric detector gain, bandwidth and noise, by a suitable choice of the photodiode, a sampling resistor, feedback resistor and capacitor, the broadband low noise photoelectric detector. Experiments show that, this circuit can be used for broadband low noise quantum communication circuit.

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A Low Noise Amplifier with 1.1dB Noise Figure and +17dBm OIP3 for GPS RF Receivers

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.336-338.1490 ◽

2013 ◽

Vol 336-338 ◽

pp. 1490-1495

Author(s):

Yong Xiang ◽

Yan Bin Luo ◽

Ren Jie Zhou ◽

Cheng Yan Ma

Keyword(s):

Noise Figure ◽

Impedance Matching ◽

Low Noise ◽

Low Noise Amplifier ◽

Gain Compression ◽

Sige Hbt ◽

Current Consumption ◽

Sige Bicmos ◽

Noise Amplifier ◽

Feedback Resistor

A 1.575GHz SiGe HBT(heterojunction bipolar transistor) low-noise-amplifier(LNA) optimized for Global Positioning System(GPS) L1-band applications was presented. The designed LNA employed a common-emitter topology with inductive emitter degeneration to simultaneously achieve low noise figure and input impedance matching. A resistor-bias-feed circuit with a feedback resistor was designed for the LNA input transistor to improve the gain compression and linearity performance. The LNA was fabricated in a commercial 0.18µm SiGe BiCMOS process. The LNA achieves a noise figure of 1.1dB, a power gain of 19dB, a input 1dB compression point(P1dB) of -13dBm and a output third-order intercept point(OIP3) of +17dBm at a current consumption of 3.6mA from a 2.8V supply.

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High frequency of low noise amplifier architecture for WiMAX application: A review

International Journal of Electrical and Computer Engineering (IJECE) ◽

10.11591/ijece.v11i3.pp2153-2164 ◽

2021 ◽

Vol 11 (3) ◽

pp. 2153

Author(s):

Abu Bakar Ibrahim ◽

Che Zalina Zulkifli ◽

Shamsul Arrieya Ariffin ◽

Nurul Husna Kahar

Keyword(s):

High Frequency ◽

Noise Figure ◽

Low Noise ◽

Low Noise Amplifier ◽

Long Distance ◽

Gain Bandwidth ◽

Front End ◽

Overall Performance ◽

Noise Amplifier

The low noise amplifier (LNA) circuit is exceptionally imperative as it promotes and initializes general execution performance and quality of the mobile communication system. LNA's design in radio frequency (R.F.) circuit requires the trade-off numerous imperative features' including gain, noise figure (N.F.), bandwidth, stability, sensitivity, power consumption, and complexity. Improvements to the LNA's overall performance should be made to fulfil the worldwide interoperability for microwave access (WiMAX) specifications' prerequisites. The development of front-end receiver, particularly the LNA, is genuinely pivotal for long-distance communications up to 50 km for a particular system with particular requirements. The LNA architecture has recently been designed to concentrate on a single transistor, cascode, or cascade constrained in gain, bandwidth, and noise figure.

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