A Low Noise Amplifier with 1.1dB Noise Figure and +17dBm OIP3 for GPS RF Receivers

A 1.575GHz SiGe HBT(heterojunction bipolar transistor) low-noise-amplifier(LNA) optimized for Global Positioning System(GPS) L1-band applications was presented. The designed LNA employed a common-emitter topology with inductive emitter degeneration to simultaneously achieve low noise figure and input impedance matching. A resistor-bias-feed circuit with a feedback resistor was designed for the LNA input transistor to improve the gain compression and linearity performance. The LNA was fabricated in a commercial 0.18µm SiGe BiCMOS process. The LNA achieves a noise figure of 1.1dB, a power gain of 19dB, a input 1dB compression point(P1dB) of -13dBm and a output third-order intercept point(OIP3) of +17dBm at a current consumption of 3.6mA from a 2.8V supply.

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A Full Integrated LNA in 0.18μm SiGe BiCMOS Technology

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.380-384.3287 ◽

2013 ◽

Vol 380-384 ◽

pp. 3287-3291

Author(s):

Bing Liang Yu ◽

Xiao Ning Xie ◽

Wen Yuan Li

Keyword(s):

Wireless Local Area Network ◽

Local Area Network ◽

Noise Figure ◽

Impedance Matching ◽

Local Area ◽

Low Noise ◽

Area Network ◽

Bicmos Technology ◽

Sige Bicmos ◽

Noise Amplifier

A fully integrated low noise amplifier (LNA) for wireless local area network (WLAN) application is presents. The circuit is fabricated in 0.18μm SiGe BiCMOS technology. For the low noise figure, a feedback path is introduced into the traditional inductively degenerated common emitter cascade LNA, which decreases the inductance for input impedance matching, therefore reduces the thermal noise caused by loss resistor. Impedance matching and noise matching are achieved at the same time. Measured results show that the resonance point of the output resonance network shifts from 2.4GHz to 2.8GHz, due to the parasitic effects at the output. At the frequency of 2.8GHz, the LNA achieves 2.2dB noise figure, 19.4dB power gain. The core circuit consumes only 13mW from a 1.8V supply and occupies less than 0.5mm2.

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Concurrent Quad-band Low Noise Amplifier (QB-LNA) using Multisection Impedance Transformer

International Journal of Electrical and Computer Engineering (IJECE) ◽

10.11591/ijece.v7i4.pp2061-2070 ◽

2017 ◽

Vol 7 (4) ◽

pp. 2061

Author(s):

Teguh Firmansyah ◽

Anggoro Suryo Pramudyo ◽

Siswo Wardoyo ◽

Romi Wiryadinata ◽

Alimuddin Alimuddin

Keyword(s):

Figure Of Merit ◽

Noise Figure ◽

Impedance Matching ◽

Low Noise ◽

Low Noise Amplifier ◽

Design System ◽

Q Factor ◽

Output Impedance ◽

Input And Output ◽

Noise Amplifier

A quad-band low noise amplifier (QB-LNA) based on multisection impedance transformer designed and evaluated in this research. As a novelty, a multisection impedance transformer was used to produce QB-LNA. A multisection impedance transformer is used as input and output impedance matching because it has higher stability, large Q factor, and low noise than lumpedcomponent.The QB-LNA was designed on FR4 microstrip substrate with er= 4.4, thickness h=0.8 mm, and tan d= 0.026. The proposed QB-LNA was designed and analyzed by Advanced Design System (ADS).The simulation has shown that QB-LNA achieves gain (S21) of 22.91 dB, 16.5 dB, 11.18 dB, and 7.25 dB at 0.92 GHz, 1.84 GHz, 2.61 GHz, and 3.54 GHz, respectively.The QB-LNA obtainreturn loss (S11) of -21.28 dB, -31.87 dB, -28.08 dB, and -30.85 dB at 0.92 GHz, 1.84 GHz, 2.61 GHz, and 3.54 GHz, respectively. It also achieves a noise figure (nf) of 2.35 dB, 2.13 dB, 2.56 dB, and 3.55 dB at 0.92 GHz, 1.84 GHz, 2.61 GHz, and 3.54 GHz, respectively. This research also has shown that the figure of merit (FoM) of the proposed QB-LNA is higher than that of another multiband LNA.

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Analytical Performance of Low Noise Amplifier Using Single-Stage Configuration for ADS-B Receiver

Jurnal Elektronika dan Telekomunikasi ◽

10.14203/jet.v21.91-97 ◽

2021 ◽

Vol 21 (2) ◽

pp. 91

Author(s):

M. Reza Hidayat ◽

Ilham Pazaesa ◽

Salita Ulitia Prini

Keyword(s):

Return Loss ◽

Noise Figure ◽

Impedance Matching ◽

High Gain ◽

Low Noise ◽

Low Noise Amplifier ◽

Stability Factor ◽

Ic 10 ◽

Radar Applications ◽

Noise Amplifier

Automatic dependent surveillance-broadcast (ADS-B) is an equipment of a radar system to reach difficult areas. For radar applications, an ADS-B requires a low noise amplifier (LNA) with high gain, stability, and a low noise figure. In this research, to produce an LNA with good performance, an LNA was designed using a BJT transistor 2SC5006 with DC bias, VCE = 3 V, and current Ic = 10 mA, also a DC supply with VCC = 12 V, to achieve a high gain with a low noise figure. The initial LNA impedance circuit was simulated using 2 elements and then converted into 3 elements to obtain parameters according to the target specification through the tuning process, impedance matching circuit was used to reduce return loss and voltage standing wave ratio (VSWR) values. The LNA sequence obtains the working frequency of 1090 MHz, return loss of -52.103 dB, a gain of 10.382, VSWR of 1.005, a noise figure of 0.552, stability factor of 0.997, and bandwidth of 83 MHz. From the simulation results, the LNA has been successfully designed according to the ADS-B receiver specifications.

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Design of Low Noise Amplifier for 1.5 GHz

SCITECH Nepal ◽

10.3126/scitech.v13i1.23500 ◽

2018 ◽

Vol 13 (1) ◽

pp. 40-47

Author(s):

Bijaya Shrestha

Keyword(s):

Noise Figure ◽

Low Noise ◽

Low Noise Amplifier ◽

Design System ◽

Rf Receiver ◽

Current Consumption ◽

Additional Noise ◽

Noise Amplifier ◽

Rf Signal ◽

Intercept Point

Low Noise Amplifier (LNA) is a front-end device of a radio frequency (RF) receiver used to increase the amplitude of an RF signal without much additional noise, thereby increasing the noise figure of the system. This paper presents design, simulation, and prototype of an LNA operating at 1.5 GHz for the bandwidth of 100 MHz. The circuit was simulated using Advanced Design System (ADS). The components used are Surface Mount Devices (SMDs); with transistor "Infineon BFP420" as a major component. Other components are resistors, capacitors, and inductors; inductors being superseded by microstrip lines. The circuit was fabricated on FR4 board. The measurements of several parameters of LNA were made using Vector Network Analyzer (VNA), Noise Figure Meter; and Spectrum Analyzer. The LNA has minimum gain of 15.4 dB and maximum noise figure of 1.33 dB. It is unconditionally stable from 50 MHz to 10 GHz. DC supply is 5V and the current consumption is 10 mA. This LNA offers Output-ThirdOrder-Intercept-Point (OJP3) of about 1 4 dBm.

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A Low Power SiGe-BiCMOS LNA for COMPASS Applications

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.513-517.4580 ◽

2014 ◽

Vol 513-517 ◽

pp. 4580-4584

Author(s):

Bing Liang Yu ◽

Jin Li ◽

Wen Yuan Li

Keyword(s):

Low Power ◽

Power Supply ◽

Noise Figure ◽

Low Noise ◽

Low Noise Amplifier ◽

Power Gain ◽

Bicmos Technology ◽

Sige Bicmos ◽

Resistive Feedback ◽

Noise Amplifier

A novel low-noise amplifier (LNA) suitable for COMPASS receiver applications is designed in SiGe-BiCMOS technology. Inductively degenerated technique and resistive feedback technique are employed to reduce the noise figure. With 1.8V power supply, the measured results achieve 17.23dB power gain and 2.58dB noise figure at 1.561GHz.

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J-band amplifier design using gain-enhanced cascodes in 0.13 μm SiGe

International Journal of Microwave and Wireless Technologies ◽

10.1017/s175907871500080x ◽

2015 ◽

Vol 7 (3-4) ◽

pp. 339-347 ◽

Cited By ~ 2

Author(s):

Stefan Malz ◽

Bernd Heinemann ◽

Rudolf Lachner ◽

Ullrich R. Pfeiffer

Keyword(s):

Noise Figure ◽

High Gain ◽

Low Noise ◽

Small Signal ◽

Sige Hbt ◽

Bicmos Technology ◽

Signal Amplifier ◽

Sige Bicmos ◽

Amplifier Design ◽

Noise Amplifier

This paper presents two J-band amplifiers in different 0.13 μm SiGe technologies: a small signal amplifier (SSA) in a technology in which never before gain has been shown over 200 GHz; and a low noise amplifier (LNA) design for 230 GHz applications in an advanced SiGe HBT technology with higher fT/fmax, demonstrating the combination of high gain, low noise, and low power in a single amplifier. Both circuits consist of a four-stage pseudo-differential cascode topology. By employing series–series feedback at the single-stage level the small-signal gain is increased, enabling circuit operation at high-frequencies and with improved efficiency, while maintaining unconditional stability. The SSA was fabricated in a SiGe BiCMOS technology by Infineon with fT/fmax values of 250/360 GHz. It has measured 19.5 dB gain at 212 GHz with a 3 dB bandwidth of 21 GHz. It draws 65 mA from a 3.3 V supply. On the other hand, a LNA was designed in a SiGe BiCMOS technology by IHP with fT/fmaxof 300/450 GHz. The LNA has measured 22.5 dB gain at 233 GHz with a 3 dB bandwidth of 10 GHz and a simulated noise figure of 12.5 dB. The LNA draws only 17 mA from a 4 V supply. The design methodology, which led to these record results, is described in detail with the LNA as an example.

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GPS low noise amplifier with high immunity to wireless jamming signals and power control option

Advances in Radio Science ◽

10.5194/ars-2-195-2004 ◽

2005 ◽

Vol 2 ◽

pp. 195-197 ◽

Cited By ~ 1

Author(s):

H. Schulz ◽

H.-J. Golberg ◽

F. Gruson ◽

M. Durler ◽

S. J. Spiegel

Keyword(s):

Power Control ◽

Noise Figure ◽

Power Saving ◽

Low Noise ◽

Low Noise Amplifier ◽

Integration Interval ◽

Control Option ◽

Current Consumption ◽

Noise Amplifier ◽

Gps System

Abstract. A SiGe GPS low noise amplifier with power control option and high immunity to wireless jamming signals is presented. These novel features applied to Atmel’s ATR0610 GPS LNA allow significant power saving at the radio interface while meeting the out-of-band linearity requirements. The results show the noise figure less than 2.1 dB, including the embedded pre-select filter, and out-of-band IIP3 above +8 dBm in the frequency range between 1.8GHz and 2 GHz with 3mA current consumption. The GPS system performance shows GPS sensitivity below -141 dBm with 5 ms integration interval.

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