scholarly journals High frequency of low noise amplifier architecture for WiMAX application: A review

2021 ◽  
Vol 11 (3) ◽  
pp. 2153
Author(s):  
Abu Bakar Ibrahim ◽  
Che Zalina Zulkifli ◽  
Shamsul Arrieya Ariffin ◽  
Nurul Husna Kahar
Keyword(s):  
High Frequency ◽  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Long Distance ◽  
Gain Bandwidth ◽  
Front End ◽  
Overall Performance ◽  
Noise Amplifier

The low noise amplifier (LNA) circuit is exceptionally imperative as it promotes and initializes general execution performance and quality of the mobile communication system. LNA's design in radio frequency (R.F.) circuit requires the trade-off numerous imperative features' including gain, noise figure (N.F.), bandwidth, stability, sensitivity, power consumption, and complexity. Improvements to the LNA's overall performance should be made to fulfil the worldwide interoperability for microwave access (WiMAX) specifications' prerequisites. The development of front-end receiver, particularly the LNA, is genuinely pivotal for long-distance communications up to 50 km for a particular system with particular requirements. The LNA architecture has recently been designed to concentrate on a single transistor, cascode, or cascade constrained in gain, bandwidth, and noise figure.

scholarly journals A 2.4 GHz low noise amplifier design at 130nm CMOS technology using common gate topology for WiFi / WiMAX application

2017 ◽  
Vol 7 (1.3) ◽  
pp. 69
Author(s):  
M. Ramana Reddy ◽  
N.S Murthy Sharma ◽  
P. Chandra Sekhar
Keyword(s):  
Noise Figure ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Low Power Consumption ◽  
Common Gate ◽  
Chip Size ◽  
Overall Performance ◽  
Amplifier Design ◽  
Noise Amplifier

The proposed work shows an innovative designing in TSMC 130nm CMOS technology. A 2.4 GHz common gate topology low noise amplifier (LNA) using an active inductor to attain the low power consumption and to get the small chip size in layout design. By using this Common gate topology achieves the noise figure of 4dB, Forward gain (S21) parameter of 14.7dB, and the small chip size of 0.26 mm, while 0.8mW power consuming from a 1.1V in 130nm CMOS gives the better noise figure and improved the overall performance.

RF Sensor Modules – Needs for Multifunctional Architectures

2016 ◽  
Vol 2016 (CICMT) ◽  
pp. 000207-000210
Author(s):  
Martin Oppermann ◽  
Felix Thurow ◽  
Ralf Rieger
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Low Loss ◽  
Reflow Soldering ◽  
Operating Modes ◽  
Front End ◽  
Multilayer Ceramic ◽  
Noise Amplifier ◽  
Rf Pcb

Abstract Next generation of RF sensor modules, mainly for airborne applications, will cover a variety of multifunction in terms of different operating modes, e.g. Radar, EW and Communications / Datalinks. The operating frequencies will cover a bandwidth of > 10 GHz and for realisation of modern Active Electronically Steered Antennas (AESA) the Transmit/Receive (T/R) modules have to match with challenging geometry demands, and RF requirements, like switching and filtering between different operational frequencies in transmit and receive mode. New GaN technology based MMICs, e.g. LNA, HPA are in development and multifunctional components (MFC MMICs) cover more than one RF function in one chip. Different front end demonstrators will be presented, based on multilayer ceramic (LTCC) and RF-PCB and associated assembly technologies, like chip&wire and SMD reflow soldering. These TRM front ends include a Low Noise Amplifier with an integrated Switch (LNA/SW) and for characterisation the measured Noise Figure (NF), a key characteristic for receive performance, will be compared. The need for high integration on module level is obvious and therefore specific demands for low loss ceramic and PCB based modules, packages and housings exist.

scholarly journals A Wideband Noise and Harmonic Distortion Canceling Low-Noise Amplifier for High-Frequency Ultrasound Transducers

Sensors ◽  
2021 ◽  
Vol 21 (24) ◽  
pp. 8476
Author(s):  
Yuxuan Tang ◽  
Yulang Feng ◽  
He Hu ◽  
Cheng Fang ◽  
Hao Deng ◽  
...  
Keyword(s):  
High Frequency ◽  
Harmonic Distortion ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Cmos Process ◽  
Ultrasound Transducers ◽  
High Frequency Ultrasound ◽  
Front End ◽  
Noise Amplifier ◽  
Frequency Ultrasound

This paper presents a wideband low-noise amplifier (LNA) front-end with noise and distortion cancellation for high-frequency ultrasound transducers. The LNA employs a resistive shunt-feedback structure with a feedforward noise-canceling technique to accomplish both wideband impedance matching and low noise performance. A complementary CMOS topology was also developed to cancel out the second-order harmonic distortion and enhance the amplifier linearity. A high-frequency ultrasound (HFUS) and photoacoustic (PA) imaging front-end, including the proposed LNA and a variable gain amplifier (VGA), was designed and fabricated in a 180 nm CMOS process. At 80 MHz, the front-end achieves an input-referred noise density of 1.36 nV/sqrt (Hz), an input return loss (S11) of better than −16 dB, a voltage gain of 37 dB, and a total harmonic distortion (THD) of −55 dBc while dissipating a power of 37 mW, leading to a noise efficiency factor (NEF) of 2.66.

Design of Microwave LNA Based on Ladder Matching Networks for WiMAX Applications

2016 ◽  
Vol 6 (4) ◽  
pp. 1717
Author(s):  
Abu Bakar Ibrahim ◽  
Ahmad Zamzuri Mohamad Ali
Keyword(s):  
High Performance ◽  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Long Distance ◽  
High Data ◽  
Receiver System ◽  
Noise Amplifier ◽  
Increasing Demand ◽  
Technology Transformation

<p>Advancement in the wireless industry, internet access without borders and increasing demand for high data rate wireless digital communication moving us toward the optimal development of communication technology. Wireless communication is a technology that plays an important role in current technology transformation. Broadband communication is a method of telecommunication that are available for transmitting large amounts of data, voice and video over long distance using different frequencies. Specifically, Low Noise Amplifier which is located at the first block of receiver system, makes it one of the important element in improving signal transmition. This study was aimed to design a microwave Low Noise Amplifier for wireless application that will work at 5.8 GHz using  high-performance low noise superHEMT transistor FHX76LP manufactured by Eudyna Technologies. The low noise amplifier (LNA) produced gain of 16.8 dB and noise figure (NF) of 1.20 dB. The input reflection (S<sub>11</sub>) and output return loss (S<sub>22</sub>) are -10.5 dB and -13.3 dB respectively. The bandwidth of the amplifier recorded is 1.2 GHz. The input sensitivity is compliant with the IEEE 802.16 standards.</p>

scholarly journals Design of Microwave LNA Based on Ladder Matching Networks for WiMAX Applications

2016 ◽  
Vol 6 (4) ◽  
pp. 1717
Author(s):  
Abu Bakar Ibrahim ◽  
Ahmad Zamzuri Mohamad Ali
Keyword(s):  
High Performance ◽  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Long Distance ◽  
High Data ◽  
Receiver System ◽  
Noise Amplifier ◽  
Increasing Demand ◽  
Technology Transformation

<p>Advancement in the wireless industry, internet access without borders and increasing demand for high data rate wireless digital communication moving us toward the optimal development of communication technology. Wireless communication is a technology that plays an important role in current technology transformation. Broadband communication is a method of telecommunication that are available for transmitting large amounts of data, voice and video over long distance using different frequencies. Specifically, Low Noise Amplifier which is located at the first block of receiver system, makes it one of the important element in improving signal transmition. This study was aimed to design a microwave Low Noise Amplifier for wireless application that will work at 5.8 GHz using  high-performance low noise superHEMT transistor FHX76LP manufactured by Eudyna Technologies. The low noise amplifier (LNA) produced gain of 16.8 dB and noise figure (NF) of 1.20 dB. The input reflection (S<sub>11</sub>) and output return loss (S<sub>22</sub>) are -10.5 dB and -13.3 dB respectively. The bandwidth of the amplifier recorded is 1.2 GHz. The input sensitivity is compliant with the IEEE 802.16 standards.</p>

Measurement of a 270 GHz Low Noise Amplifier With 7.5 dB Noise Figure

2007 ◽  
Vol 17 (7) ◽  
pp. 546-548 ◽  
Author(s):  
T. Gaier ◽  
L. Samoska ◽  
A. Fung ◽  
W. R. Deal ◽  
V. Radisic ◽  
...  
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Noise Amplifier

scholarly journals A 0.18um CMOS Low Noise Amplifier for 3-5ghz UWB Receivers

2018 ◽  
Vol 7 (3.6) ◽  
pp. 84
Author(s):  
N Malika Begum ◽  
W Yasmeen
Keyword(s):  
Power Supply ◽  
Noise Figure ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Ultra Wideband ◽  
Noise Amplifier ◽  
5 Ghz ◽  
Chebyshev Filter ◽  
Minimum Noise

This paper presents an Ultra-Wideband (UWB) 3-5 GHz Low Noise Amplifier (LNA) employing Chebyshev filter. The LNA has been designed using Cadence 0.18um CMOS technology. Proposed LNA achieves a minimum noise figure of 2.2dB, power gain of 9dB.The power consumption is 6.3mW from 1.8V power supply.  

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