Audio Power Amplifier Design and Debugging

The modern demands for hearing level is getting higher and higher, so the authenticity of stereo sound quality demand is higher and higher, the stereo power amplifier is integrated circuit TDA2030A primarily composed of stereo power amplifier, it USES the typical power amplification circuit, with less distortion, peripheral components, high stability, wide frequency response range, high fidelity, the advantages of large power, at the same time adopt SiYun put GL324A of input audio signal processing and high, bass, and thus more output sound of quality guarantee. Articles of amplifiers made simple introduction, and give the detailed design and debug program.

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РАЗРАБОТКА СВЧ МОНОЛИТНЫХ ИНТЕГРАЛЬНЫХ СХЕМ МИЛЛИМЕТРОВОГО ДИАПАЗОНА НА ОСНОВЕ GAAS ДЛЯ ПРИМЕНЕНИЯ В СОВРЕМЕННЫХ ИНФОРМАЦИОННОКОММУНИКАЦИОННЫХ СИСТЕМАХ НОВОГО ПОКОЛЕНИЯ (5G)

Nanoindustry Russia ◽

10.22184/1993-8578.2020.13.3s.321.324 ◽

2020 ◽

Vol 96 (3s) ◽

pp. 321-324

Author(s):

Е.В. Ерофеев ◽

Д.А. Шишкин ◽

В.В. Курикалов ◽

А.В. Когай ◽

И.В. Федин

Keyword(s):

Output Power ◽

Power Amplifier ◽

Integrated Circuit ◽

Phase Shifter ◽

Phase Error ◽

Microwave Integrated Circuit ◽

Gain Compression ◽

Monolithic Microwave Integrated Circuit ◽

And Performance ◽

Power Capability

В данной работе представлены результаты разработки СВЧ монолитной интегральной схемы шестиразрядного фазовращателя и усилителя мощности диапазона частот 26-30 ГГц. СКО ошибки по фазе и амплитуде фазовращателя составили 1,2 град. и 0,13 дБ соответственно. Максимальная выходная мощность и КПД по добавленной мощности усилителя в точке сжатия Ку на 1 дБ составили 30 дБм и 20 % соответственно. This paper describes the design, layout, and performance of 6-bit phase shifter and power amplifier monolithic microwave integrated circuit (MMIC), 26-30 GHz band. Phase shifter MMIC has RMS phase error of 1.2 deg. And RMD amplitude error is 0.13 dB. MMIC power amplifier has output power capability of 30 dBm at 1 dB gain compression (P-1dB) and PAE of 20 %.

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Practical Considerations for the CW Power Amplifier Design for Lower Hybrid Frequency Applications

2020 IEEE International RF and Microwave Conference (RFM) ◽

10.1109/rfm50841.2020.9344753 ◽

2020 ◽

Author(s):

Sandeep R. Sainkar ◽

Alice N. Cheeran ◽

Gajendrakumar Shinde ◽

Promod K. Sharma ◽

Harish V. Dixit

Keyword(s):

Power Amplifier ◽

Lower Hybrid ◽

Hybrid Frequency ◽

Amplifier Design

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A 77 GHz Power Amplifier Design with in-Phase Power Combing for 20 dBm Psat in a 40-nm CMOS Technology

2021 IEEE International Symposium on Circuits and Systems (ISCAS) ◽

10.1109/iscas51556.2021.9401696 ◽

2021 ◽

Author(s):

Guanglai Wu ◽

Yi Zhang ◽

Lin He ◽

Diyang Gao ◽

Yang Liu ◽

...

Keyword(s):

Power Amplifier ◽

Cmos Technology ◽

Amplifier Design ◽

77 Ghz

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Improvement of Small Signal Equivalent Simulations for Power and Efficiency Matching of GaN HEMTs

Electronics ◽

10.3390/electronics10030263 ◽

2021 ◽

Vol 10 (3) ◽

pp. 263

Author(s):

Roberto Quaglia

Keyword(s):

Power Amplifier ◽

High Electron Mobility Transistor ◽

High Electron ◽

Large Signal ◽

Signal Model ◽

Or Efficiency ◽

Summary Table ◽

Matching Networks ◽

Amplifier Design ◽

Frequency Power

In high-frequency power-amplifier design, it is common practice to approach the design of reactive matching networks using linear simulators and targeting a reflection loss limit (referenced to the target impedance). It is well known that this is only a first-pass design technique, since output power or efficiency contours do not correspond to mismatch circles. This paper presents a method to improve the accuracy of this approach in the case of matching network design for power amplifiers based on gallium nitride (GaN) technology. Equivalent mismatch circles, which lay within the power or efficiency contours targeted by the design, are analytically obtained thanks to geometrical considerations. A summary table providing the parameters to use for typical contours is provided. The technique is demonstrated on two examples of power-amplifier design on the 6–12 GHz band using the non-linear large-signal model of a GaN High Electron Mobility Transistor (HEMT).

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