PEN Film Surface Development Using High-Frequency - Low Pressure Plasma Chemical Vapor Deposition System

2014 ◽  
Vol 704 ◽  
pp. 58-62
Author(s):  
Peerapong Nuchuay ◽  
Nuttee Thungsuk ◽  
Tanapoj Chaikeeree ◽  
Toshifumi Yuji ◽  
Nat Kasayapan ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Solar Cell ◽  
Vapor Deposition ◽  
High Frequency ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Film Material ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Surface Development

Solar cell converts sunlight into electricity with no moving parts and environmental friendly. Although silicon based solar cell is currently more efficient, the dye-sensitized solar cell is considerably cheaper to manufacture because of its low cost materials and simplicity process of fabrication. In this paper, the development of plasma formed equipment for thin film material on flexible solar cell using low-pressure high frequency Plasma Chemical Vapor Deposition method on the surface of Polyethylene naphthalate (PEN) with the mixture of Ar gas and N2gas is presented. The results indicate that using this method can be possible for surface modification.

The Development of Polyethylene Naphthalate Films by Low-pressure High-frequency Plasma Chemical Vapor Deposition System with Advance Oxidations Process

2015 ◽  
Vol 18 (1) ◽  
Author(s):  
Nuttee Thungsuk ◽  
Toshifumi Yuji ◽  
Narong Mungkung ◽  
Yoshimi Okamura ◽  
Atsushi Fujimaru ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Frequency ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Polyethylene Naphthalate ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
High Frequency Plasma ◽  
Frequency Plasma

AbstractThe low-pressure high-frequency plasma chemical vapor deposition (CVD) system was developed with non-thermal plasma process to study the Polyethylene naphthalate (PEN) surface characteristics. Plasma surface treatment by oxygen can improve the adhesive properties. A mixture of Ar and O

An Analysis of Low-Pressure High-Frequency Plasma Chemical Vapor Deposition System for Flexible Solar Cell Characteristics

2015 ◽  
Vol 749 ◽  
pp. 121-125
Author(s):  
Nuttee Thungsuk ◽  
Toshifumi Yuji ◽  
Nat Kasayapan ◽  
Chirapas Mahawan ◽  
Somchai Arunrungrusmi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Frequency ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Polyethylene Naphthalate ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
High Frequency Plasma ◽  
Frequency Plasma

The flexible dye-sensitized solar cells have a need to improve adhesive property in each layer in order to increase efficiency of this solar cell. Flexible surface with Polyethylene naphthalate (PEN) were modified by using surface treatment from developed the low-pressure high-frequency Plasma Chemical Vapor Deposition system in order to improve adhesive characteristic. The oxygen plasma treatment can improve adhesive property of Polyethylene naphthalate (PEN) films and also cleaning surface. We were using the mixture of Ar and O2 gas for plasma treatment with oxygen gas flow rate from 0.1 L/min. to 0.5 L/min. while Ar gas flow rate was set at 10 L/min. and 5 minute for treatment time. The results indicate that using low-pressure high-frequency Plasma Chemical Vapor Deposition system can be possible improvement adhesive characteristic of PEN films with radical increased on films.

Investigation on the Surface Passivation of Intrinsic a-Si:H Thin Films Prepared by Inductively Coupled Plasma-Chemical Vapor Deposition for Heterojunction Solar Cell Applications

2008 ◽  
Vol 8 (9) ◽  
pp. 4662-4665 ◽  
Author(s):  
Chaehwan Jeong ◽  
Minsung Jeon ◽  
Tae-Won Kim ◽  
Seongjae Boo ◽  
Koichi Kamisako
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Solar Cell ◽  
Vapor Deposition ◽  
Inductively Coupled Plasma ◽  
Carrier Lifetime ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Inductively Coupled

Intrinsic a-Si:H thin films, which can have passivation functions on the surface of crystalline Si, were deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD). The properties of the films were investigated at deposition temperatures ranging from 50 to 400 °C. The Si—H stretching mode at 2000 cm−1, which indicates good film quality, was found in the range of 150∼400 °C, but the film quality was not good at deposition temperatures below 150 °C. The passviation quality was determined by measuring the effective carrier lifetime using the quasi-steady state photoconductance (QSS-PC) technique. Two, 5, 7.5 and 10 nm thick films were deposited at 150 °C and annealed at 200 °C for 1 hour. The carrier lifetime of these films was approximately 3 times higher than that observed before annealing. A p a-SiC:H/i a-Si:H/n c-Si hetero-structure solar cell with a 7.8% efficiency and approximately 85% quantum efficiency (QE) was obtained by inserting an intrinsic a-Si:H thin film (5 nm) between the interfaces. These results highlight the potential applications of a passivation layer to heterojunction solar cells.

Sign in / Sign up

Export Citation Format

Share Document