Principle and Experiment of Ultrasonic Subtle Atomization in CMP

2011 ◽  
Vol 279 ◽  
pp. 287-290 ◽  
Author(s):  
Xiao Peng Liu ◽  
Xiao Chun Chen ◽  
Qing Zhong Li
Keyword(s):  
Surface Roughness ◽  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Experimental System ◽  
Mechanical Polishing

The method of chemical mechanical polishing (CMP) using slurry which was ultrasonic subtle atomized was researched, and the system of Ultrasonic Subtle Atomization—Chemical Mechanical Polishing was established. The effects of polish parameters on polishing were also investigated. The results show that the experimental system can fully realize the expected function of polishing, the use of slurry is about one-tenth of the amount of traditional CMP, material removal rate can reach 113.734nm/min and the surface roughness is similar to the surface roughness in the traditional way.

Analysis on the Influence of Oxidant in CMP of Ultra-Thin Stainless Steel

2014 ◽  
Vol 1027 ◽  
pp. 167-170 ◽  
Author(s):  
Jian Xiu Su ◽  
Jia Peng Chen ◽  
Hai Feng Cheng ◽  
Song Zhan Fan
Keyword(s):  
Surface Roughness ◽  
Stainless Steel ◽  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
304 Stainless Steel ◽  
Research Results

In chemical mechanical polishing (CMP) of ultra-thin stainless steel, the oxidant of polishing slurry determines the material removal rate (MRR). In this paper, the influences of oxidant in slurry on MRR and surface roughness have been studied in CMP of ultra-thin 304 stainless steel based on alumina (Al2O3) abrasive. The research results show that, in the same conditions, the MRR increases with the increase of the oxidant C and the oxidant B, the MRR decreases with the increase of the oxidant A and the MRR is max with the oxidant C. It indicated that the oxidant C has a large effect on MRR in CMP of the 304 stainless steel. The research results can provide the reference for studying the slurry in CMP of ultra-thin stainless steel.

Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001)

2008 ◽  
Vol 600-603 ◽  
pp. 831-834 ◽  
Author(s):  
Joon Ho An ◽  
Gi Sub Lee ◽  
Won Jae Lee ◽  
Byoung Chul Shin ◽  
Jung Doo Seo ◽  
...  
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Diamond Particles ◽  
Average Grain Size ◽  
Silica Slurry ◽  
Sic Wafer

2inch 6H-SiC (0001) wafers were sliced from the ingot grown by a conventional physical vapor transport (PVT) method using an abrasive multi-wire saw. While sliced SiC wafers lapped by a slurry with 1~9㎛ diamond particles had a mean height (Ra) value of 40nm, wafers after the final mechanical polishing using the slurry of 0.1㎛ diamond particles exhibited Ra of 4Å. In this study, we focused on investigation into the effect of the slurry type of chemical mechanical polishing (CMP) on the material removal rate of SiC materials and the change in surface roughness by adding abrasives and oxidizer to conventional KOH-based colloidal silica slurry. The nano-sized diamond slurry (average grain size of 25nm) added in KOH-based colloidal silica slurry resulted in a material removal rate (MRR) of 0.07mg/hr and the Ra of 1.811Å. The addition of oxidizer (NaOCl) in the nano-size diamond and KOH based colloidal silica slurry was proven to improve the CMP characteristics for SiC wafer, having a MRR of 0.3mg/hr and Ra of 1.087Å.

A Model for Optimizing Material Removal Rate in Low-Pressure CMP: Effects of Pad Porosity and Abrasive Concentration

2008 ◽  
Author(s):  
Dinc¸er Bozkaya ◽  
Sinan Mu¨ftu¨
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Applied Pressure ◽  
Low Pressure ◽  
Mechanical Polishing ◽  
Low K

The necessity to planarize ultra low-k (ULK) dielectrics [1], and the desire to reduce polishing defects leads to use of lower polishing pressures in chemical mechanical polishing (CMP). However, lowering the applied pressure also decreases the material removal rate (MRR), which causes the polishing time for each wafer to increase. The goal of this work is to investigate effects of pad porosity and abrasive concentration on the MRR.

scholarly journals Study on the Influence of Sapphire Crystal Orientation on Its Chemical Mechanical Polishing

2020 ◽  
Vol 10 (22) ◽  
pp. 8065
Author(s):  
Linlin Cao ◽  
Xiang Zhang ◽  
Julong Yuan ◽  
Luguang Guo ◽  
Teng Hong ◽  
...  
Keyword(s):  
Material Removal Rate ◽  
Material Properties ◽  
Chemical Mechanical Polishing ◽  
Crystal Orientation ◽  
Material Removal ◽  
Removal Rate ◽  
Substrate Material ◽  
Mechanical Polishing ◽  
Sapphire Crystal ◽  
Research Objects

Sapphire has been the most widely used substrate material in LEDs, and the demand for non-C-planes crystal is increasing. In this paper, four crystal planes of the A-, C-, M- and R-plane were selected as the research objects. Nanoindentation technology and chemical mechanical polishing technology were used to study the effect of anisotropy on material properties and processing results. The consequence showed that the C-plane was the easiest crystal plane to process with the material removal rate of 5.93 nm/min, while the R-plane was the most difficult with the material removal rate of 2.47 nm/min. Moreover, the research results have great guiding significance for the processing of sapphire with different crystal orientations.

Study on Chemical Mechanical Polishing Removal Mechanism of Monocrystalline Silicon

2014 ◽  
Vol 538 ◽  
pp. 40-43
Author(s):  
Hong Wei Du ◽  
Yan Ni Chen
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Silicon Wafers ◽  
Monocrystalline Silicon ◽  
Mechanical Polishing ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Polishing Pressure

In this paper, material removal mechanism of monocrystalline silicon by chemical etching with different solutions were studied to find effective oxidant and stabilizer. Material removal mechanism by mechanical loads was analyzed based on the measured acoustic signals in the scratching processes and the observation on the scratched surfaces of silicon wafers. The chemical mechanical polishing (CMP) processes of monocrystalline silicon wafers were analyzed in detail according to the observation and measurement of the polished surfaces with XRD. The results show that H2O2 is effective oxidant and KOH stabilizer. In a certain range, the higher concentration of oxidant, the higher material removal rate; the higher the polishing liquid PH value, the higher material removal rate. The polishing pressure is an important factor to obtain ultra-smooth surface without damage. Experimental results obtained silicon polishing pressure shall not exceed 42.5kPa.

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