A New Test Environment Approach to SEE Detection in MOSFETs

This paper shows a comparison between two different MOSFET structures: a conventional layout (CM) and Diamond (DM - enclosed layout transistor), as tolerance to the Single Event effect - SEE. Both CMOS 0.35μm technology devices types have the same geometric factor (W/L) and during irradiation were monitored continuously to detect and acquire the SEEs applying a new approach with a PXI test system. For this work was used heavy ion beams produced at the São Paulo 8 UD Pelletron accelerator.

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Single Event Effect Testing With Ultrahigh Energy Heavy Ion Beams

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2019.2961801 ◽

2020 ◽

Vol 67 (1) ◽

pp. 63-70 ◽

Cited By ~ 1

Author(s):

Maria Kastriotou ◽

Pablo Fernandez-Martinez ◽

Ruben Garcia Alia ◽

Carlo Cazzaniga ◽

Matteo Cecchetto ◽

...

Keyword(s):

Heavy Ion ◽

Ion Beams ◽

Ultrahigh Energy ◽

Single Event ◽

Single Event Effect

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A New Approach to Single Event Effect Tolerance Based on Asynchronous Circuit Technique

Journal of Electronic Testing ◽

10.1007/s10836-007-5029-z ◽

2008 ◽

Vol 24 (1-3) ◽

pp. 57-65 ◽

Cited By ~ 7

Author(s):

Rui Gong ◽

Wei Chen ◽

Fang Liu ◽

Kui Dai ◽

Zhiying Wang

Keyword(s):

Single Event ◽

Asynchronous Circuit ◽

New Approach ◽

Single Event Effect ◽

Circuit Technique

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Single event effect proton and heavy ion test results for candidate spacecraft electronics

Workshop Record. 1994 IEEE Radiation Effects Data Workshop ◽

10.1109/redw.1994.633037 ◽

2005 ◽

Cited By ~ 16

Author(s):

K.A. LaBel ◽

A.K. Moran ◽

D.K. Hawkins ◽

J.A. Cooley ◽

C.M. Seidleck ◽

...

Keyword(s):

Heavy Ion ◽

Test Results ◽

Single Event ◽

Single Event Effect

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Influence of heavy ion flux on single event effect testing in memory devices

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/j.nimb.2017.04.038 ◽

2017 ◽

Vol 406 ◽

pp. 431-436 ◽

Cited By ~ 3

Author(s):

Jie Luo ◽

Jie Liu ◽

Youmei Sun ◽

Mingdong Hou ◽

Kai Xi ◽

...

Keyword(s):

Heavy Ion ◽

Ion Flux ◽

Memory Devices ◽

Single Event ◽

Single Event Effect

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Single event effect proton and heavy ion test results in support of candidate NASA programs

Proceedings of 1995 IEEE Nuclear and Space Radiation Effects Conference (NSREC'95) ◽

10.1109/redw.1995.483259 ◽

2002 ◽

Cited By ~ 8

Author(s):

K. LaBel ◽

A. Moran ◽

D. Hawkins ◽

A. Sanders ◽

C. Seidleck ◽

...

Keyword(s):

Heavy Ion ◽

Test Results ◽

Single Event ◽

Single Event Effect

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Study on Single Event Effect Simulation in T-Shaped Gate Tunneling Field-Effect Transistors

Micromachines ◽

10.3390/mi12060609 ◽

2021 ◽

Vol 12 (6) ◽

pp. 609

Author(s):

Chen Chong ◽

Hongxia Liu ◽

Shulong Wang ◽

Shupeng Chen ◽

Haiwu Xie

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Reducing Power ◽

Heavy Ion ◽

Transient Current ◽

Future Research ◽

Single Event ◽

Single Event Effect ◽

Tunneling Field Effect Transistors ◽

Gate Tunneling

Tunneling field-effect transistors (TFETS) can reduce the subthreshold swing (SS) to below 60 mV/decade due to their conduction mechanism with band-to-band tunneling (BTBT), thereby reducing power consumption. T-shaped gate tunneling field-effect transistors (TGTFET) adapt double source and T-shaped gates to enhance the on-state current and to generate the tunneling probability. In this paper, TGTFET subjected to heavy-ion irradiation is studied by technology computer-aided design (TCAD) simulation for the first time. The results show that as the drain bias and linear energy transfer (LET) increase, the transient current and collected charge also increase. When LET = 100 MeV·cm2/mg and Vd = 0.5 V, the transient current of TGTFET is as high as 10.63 mA, which is much larger than the on-state current. This means that TGTFET is more sensitive to single-event effect (SEE) than FDSOI. By simulating a heavy-ion strike on different locations in TGTFET, the tunneling junction is the most sensitive region of SEE. This provides guidance for future research on the antiradiation application of TFET-based devices.

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