Research of Structural and Optical Properties of MgZnO Films Annealed at Different Oxygen Partial Pressures

2015 ◽  
Vol 1096 ◽  
pp. 54-61 ◽  
Author(s):  
Wei Wei Liu ◽  
Zhen Zhong Zhang
Keyword(s):  
Optical Properties ◽  
Oxygen Content ◽  
Interstitial Oxygen ◽  
Photoluminescence Spectra ◽  
Structural And Optical Properties ◽  
Annealing Conditions ◽  
Partial Pressures ◽  
High Annealing ◽  
Mgzno Film ◽  
Annealing Pressure

Structural and optical properties of MgZnO films were investigated by annealing in oxygen at different pressures. The crystalline quality of the annealed films improves with increasing annealing pressure. After annealing at 3.03×105Pa, the grain size became larger and oxygen content in the annealed films increased. This was attributed to the recrystallization of the films under high annealing pressure. However, a decreased oxygen content was found by annealing the films at 1.01×105or 2.05×10-3Pa. According to the defect levels and the relationship between photoluminescence spectra and annealing conditions, it was suggested that the emission peak located at 2.270 eV in photoluminescence spectra was related to interstitial oxygen (Oi) which will compensate the donor defects (Znior/and VO) and lead to the MgZnO film transforming into ap-type conduction under the annealing pressure of 3.03×105Pa.

STRUCTURAL AND OPTICAL PROPERTIES OF LARGE-SCALE ZnO NANOWIRES AND NANOSHEETS PREPARED BY DRY THERMAL OXIDATION

2009 ◽  
Vol 16 (06) ◽  
pp. 901-904 ◽  
Author(s):  
S. S. TNEH ◽  
H. ABU HASSAN ◽  
K. G. SAW ◽  
F. K. YAM ◽  
Z. HASSAN
Keyword(s):  
Optical Properties ◽  
Thermal Oxidation ◽  
Large Scale ◽  
Gas Flow ◽  
Deep Level ◽  
Exciton Peak ◽  
Interstitial Oxygen ◽  
Energy Dispersion Spectroscopy ◽  
Zno Nanostructure ◽  
Annealing Conditions

In this work, we report the morphology and optical properties of zinc oxide ( ZnO ) layers prepared by dry thermal oxidation at different annealing conditions. Morphology studies using scanning electron microscope (SEM) show that the amount of nanowires and nanosheets increases with the introduction of a flow of O2 gas. High-resolution X-ray diffraction (HR-XRD) data show that typical polycrystalline ZnO nanostructure layers have been deposited. Near-perfect stoichiometry of Zn and O atom vacancies has been observed from energy dispersion spectroscopy (EDS) spectrum. Photoluminescence (PL) spectra show strong peaks at UV and green regions. An increase in the stoichiometry of ZnO has been achieved with the oxygen gas flow during annealing indicating that deep-level defects represented by interstitial oxygen and antisite oxygen are gas pressure dependent. A single exciton peak with binding energy 60 meV has been observed at room temperature.

scholarly journals Атомная структура и оптические свойства слоев CaSi-=SUB=-2-=/SUB=-, выращенных на CaF-=SUB=-2-=/SUB=-/Si-подложках

2021 ◽  
Vol 55 (9) ◽  
pp. 725
Author(s):  
В.А. Зиновьев ◽  
А.В. Кацюба ◽  
В.А. Володин ◽  
А.Ф. Зиновьева ◽  
С.Г. Черкова ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electron Beam ◽  
High Energy ◽  
Two Dimensional ◽  
High Energy Electron ◽  
Photoluminescence Spectra ◽  
Structural And Optical Properties ◽  
Synthesis Conditions ◽  
Simultaneous Irradiation ◽  
Growth Features

In this work, we study the growth features, as well as the structural and optical properties of CaSi2 layers formed in the process of successive deposition of Si and CaF2 on a Si (111) substrate with simultaneous irradiation with high energy electron beam. The Raman spectra recorded in the regions of the electron beam action showed peaks characteristic of crystalline CaSi2 layers. The study of the surface morphology of the grown structures demonstrated that, under the chosen synthesis conditions, the formation of CaSi2 layers during electron irradiation occurs according to a two-dimensional layer mechanism. The photoluminescence spectra measured in the region modified by the electron beam have significant differences from the spectra measured outside this region.

scholarly journals Photoluminescence Emission and Structure Study in ZnO:Ag nanorods

2015 ◽  
Vol 5 (01) ◽  
pp. 55
Author(s):  
Erick Velázquez Lozada ◽  
G M Camacho-González ◽  
J M Quino-Cerdan
Keyword(s):  
Optical Properties ◽  
Ultrasonic Spray Pyrolysis ◽  
Structure Study ◽  
Zno Films ◽  
Photoluminescence Spectra ◽  
Scanning Electronic Microscopy ◽  
Electronic Microscopy ◽  
Structural And Optical Properties ◽  
Ultrasonic Spray ◽  
Different Temperatures

<p>Scanning electronic microscopy (SEM) andX ray diffraction (XRD) have been applied to the study of structural and optical properties of ZnOnanocrystals prepared by the ultrasonic spray pyrolysis (USP) at different temperatures. The variation of temperatures and times at the growth of ZnO films permits modifying the ZnO phase from the amorphous to crystalline, to change the size of ZnOnanocrystals (NCs), as well as to vary their photoluminescence spectra. </p>

POST-DEPOSITION ANNEALING INFLUENCED STRUCTURAL AND OPTICAL PROPERTIES OF RF MAGNETRON SPUTTERED TiO2 FILMS

2011 ◽  
Vol 10 (01n02) ◽  
pp. 279-283
Author(s):  
S. UTHANNA ◽  
P. KONDAIAH ◽  
M. CHANDRA SEKHAR ◽  
R. SUBBA REDDY ◽  
G. MOHAN RAO
Keyword(s):  
Optical Properties ◽  
Rf Magnetron Sputtering ◽  
Structural And Optical Properties ◽  
Partial Pressures ◽  
Titanium Target ◽  
Different Temperatures ◽  
Quartz Substrates ◽  
Deposited Films ◽  
Titanium Oxide Films ◽  
Post Deposition

Titanium oxide films were deposited on Si and quartz substrates by RF magnetron sputtering of titanium target under various oxygen partial pressures. The films were annealed in air at different temperatures and the influence of annealing temperature on the structural and optical properties was studied. The XPS studies revealed that the films formed at oxygen partial pressure of 2 × 10-2 Pa were nearly stoichiometric. The as-deposited films were amorphous, the films annealed at 573 K were anatase, while those annealed at 973 K were mixed anatase and rutile phases of TiO 2. The as-deposited films showed an optical bandgap of 3.32 eV while those annealed at 973 K was 3.19 eV.

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