Study for Preparation and Photoelectric Property of ZnSe Crystal

2010 ◽  
Vol 156-157 ◽  
pp. 1101-1104
Author(s):  
Cui Xia Liu ◽  
Zeng Yun Jian ◽  
Man Zhu
Keyword(s):  
Electrical Properties ◽  
Single Crystal ◽  
Photoelectric Property ◽  
Optical And Electrical Properties ◽  
Znse Crystal ◽  
High Quality ◽  
Preparation Methods ◽  
Research Fields ◽  
Znse Single Crystal

ZnSe is a kind of important semiconductor photo-electricity materials, which has received common attentions. The preparation and photoelectric property of high quality ZnSe single crystal have become the focus on current research fields. In this paper, the preparation methods were discussed emphatically and optical and electrical properties were analyzed on these bases. Furthermore, the application prospective was discussed. Therefore, this paper provided research basis for preparation and application of ZnSe.

Optical and electrical properties of high-quality Ti2O3 epitaxial film grown on sapphire substrate

2016 ◽  
Vol 122 (11) ◽  
Author(s):  
Haibo Fan ◽  
Mingzi Wang ◽  
Zhou Yang ◽  
Xianpei Ren ◽  
Mingli Yin ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Sapphire Substrate ◽  
Epitaxial Film ◽  
Optical And Electrical Properties ◽  
High Quality

Investigations on structural, optical and electrical properties of phenyl benzoate single crystal

2018 ◽  
Vol 104 ◽  
pp. 43-48 ◽  
Author(s):  
Narayana Perumal Rajesh ◽  
V. Jabha Ananthi ◽  
G. Vinitha ◽  
C.K. Jayasankar
Keyword(s):  
Electrical Properties ◽  
Single Crystal ◽  
Optical And Electrical Properties ◽  
Phenyl Benzoate

Structure, optical and electrical properties of CH3NH3SnI3 single crystal

2019 ◽  
Vol 563 ◽  
pp. 107-112 ◽  
Author(s):  
Y.Q. Huang ◽  
J. Su ◽  
Q.F. Li ◽  
D. Wang ◽  
L.H. Xu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Single Crystal ◽  
Optical And Electrical Properties

Optical and Electrical Properties of Cd Te Laser-Synthetized

1982 ◽  
Vol 13 ◽  
Author(s):  
L. Baufay ◽  
A. Pigeolet ◽  
R. Andrew ◽  
L.D. Laude
Keyword(s):  
Electrical Properties ◽  
Single Crystal ◽  
Electrical Characterization ◽  
Point Of View ◽  
Optical And Electrical Properties ◽  
Impurity States ◽  
Absorption Measurements ◽  
Forbidden Gap

ABSTRACTOptical and electrical characterization of CdTe synthetized by laser irradiationofamultilayer film of alternately Cd and Te is achieved. Optical absorption measurements evidence the good quality of these films and show that they have behaviour comparable to the single crystal. The influence of the irradiation conditions on the electrical properties of such CdTe films is discussed; they are compared to single crystal from the point of view of resistivity. It is shown that it is possible to prepare by this means samples devoid of impurity states in the middle of the forbidden gap. Finally, the ohmicity of Au, Al, Cr, ITO and non irradiated Cd/Te sandwich contacts is tested.

Transparent Conducting Zinc Stannate Films Prepared on α-Al2O3 (0001) by MOCVD

2014 ◽  
Vol 893 ◽  
pp. 558-561
Author(s):  
Feng Ji ◽  
Xue Zhang ◽  
Chang Lv ◽  
Zhen Tai Hou
Keyword(s):  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
High Quality ◽  
Zinc Stannate ◽  
Sapphire Substrates ◽  
Transparent Conducting Films ◽  
Transparent Conducting

High quality crystalline zinc-stannate transparent conducting films were successfully prepared on sapphire substrates by MOCVD method. ZnSnO films with the proportions of tin and zinc from 1: 1 to 1:20 were prepared and ZnSnO3films were obtained when the proportion is 1:1. The structural, optical and electrical properties of zinc-stannate films were investigated.

Incorporation of lithium in single crystal diamond: diffusion profiles and optical and electrical properties

1997 ◽  
Vol 6 (11) ◽  
pp. 1726-1732 ◽  
Author(s):  
J. te Nijenhuis ◽  
G.Z. Cao ◽  
P.C.H.J. Smits ◽  
W.J.P. van Enckevort ◽  
L.J. Giling ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Single Crystal ◽  
Optical And Electrical Properties ◽  
Single Crystal Diamond ◽  
Diffusion Profiles

Optical and Electrical Properties of Single‐Crystal GaP Vapor‐Grown on GaAs Substrate

1964 ◽  
Vol 35 (10) ◽  
pp. 2959-2962 ◽  
Author(s):  
Herbert Flicker ◽  
Bernard Goldstein ◽  
Paul‐Andre Hoss
Keyword(s):  
Electrical Properties ◽  
Single Crystal ◽  
Gaas Substrate ◽  
Optical And Electrical Properties

Crystal Ion-Slicing of Magnetic and Ferroelectric Oxide Films

1998 ◽  
Vol 517 ◽  
Author(s):  
M. Levy ◽  
R.M. Osgood ◽  
A. Kumar ◽  
H. Bakhru ◽  
R. Liu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Ion Implantation ◽  
Single Crystal ◽  
Sacrificial Layer ◽  
Oxide Films ◽  
High Quality ◽  
Damage Layer ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Ferroelectric Oxide

AbstractThe epitaxial separation of single-crystal magnetic and ferroelectric oxide films is presented. Ion implantation is used to create a buried damage layer beneath the surface. The high etch-selectivity of this sacrificial layer makes it possible to detach high quality single-crystal films from bulk samples. Magnetic and electrical properties of the films are discussed.

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