Study of Mg(Zr0.05Ti0.95)O3 Dielectric Thin Films by Sol-Gel Method
2011 ◽
Vol 194-196
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pp. 2249-2253
Keyword(s):
Sol Gel
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Electrical properties and microstructures of Mg(Zr0.05Ti0.95)O3 thin films prepared by sol-gel method on n-type Si(100) substrates at different annealing temperatures have been investigated. The diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. All films exhibited Mg(Zr0.05Ti0.95)O3 peaks orientation perpendicular to the substrate surface and the grain size with the increase in the annealing temperature. A low leakage current density of 1.1×10-4 A/cm2, a dielectric constant of 9.4 and an optical bandgap of 3.6 were obtained for the prepared films. It may find application in dynamic random access memories and wireless communication devices.
2011 ◽
Vol 10
(2)
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pp. 187-192
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2008 ◽
Vol 71
(4)
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pp. 1234-1238
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2000 ◽
Vol 181-182
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pp. 109-112
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2014 ◽
Vol 152
(1)
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pp. 29-35
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2010 ◽
Vol 27
(2)
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pp. 027704
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2015 ◽
Vol 76
(1)
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pp. 220-226
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