Effect of Annealing Treatments on Mg(Zr0.05Ti0.95)O3 Thin Films by Sol-Gel Method

Dielectric, Optical properties and microstructures of Mg(Zr0.05Ti0.95)O3 thin films prepared by sol-gel method on n-type Si(100) substrates at different annealing temperatures have been investigated. The selected-area diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. All films exhibited Mg(Zr0.05Ti0.95)O3 peaks orientation perpendicular to the substrate surface and the grain size with the increase in the annealing temperature. A dielectric constant of 7.4 and an optical bandgap of 3.7 were obtained for the prepared films.

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Structure and dielectric behaviour of Sr-modified Bi4Si3O12 thin films prepared via sol gel method

Processing and Application of Ceramics ◽

10.2298/pac1801036s ◽

2018 ◽

Vol 12 (1) ◽

pp. 36-44 ◽

Cited By ~ 1

Author(s):

Abbas Sadeghzadeh-Attar ◽

Saeid Hajijafari-Bidgoli ◽

Mohammad Bafandeh

Keyword(s):

Thin Films ◽

Dielectric Constant ◽

Dielectric Loss ◽

Annealing Temperature ◽

Sol Gel ◽

Average Particle Size ◽

Average Particle ◽

Sem Images ◽

Gel Method ◽

Sol Gel Method

Bismuth silicate (Bi4Si3O12, BSO) nanostructured films containing 0,1,2, and 3mol% Sr were prepared via sol-gel method and annealed at different temperatures up to 700?C. The effects of Sr content on the structure and morphology of prepared films were investigated. SEM images showed that surfaces of the prepared films were dense, smooth and homogeneous. The average particle size was changed from 30 to 35 nm as the annealing temperature was increased from 500 to 700?C. Variation of the dielectric constant and dielectric loss as a function of frequency and annealing temperature for the synthesized thin films with different content of Sr were also studied. The dielectric constant and dielectric loss decrease with Sr addition, and reach the minimum for the sample containing 2mol% Sr. These changes could be attributed to the crystal structure and formation of secondary phases.

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Study of Mg(Zr0.05Ti0.95)O3 Dielectric Thin Films by Sol-Gel Method

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.194-196.2249 ◽

2011 ◽

Vol 194-196 ◽

pp. 2249-2253

Author(s):

Ching Fang Tseng ◽

Pai Chuan Yang ◽

Chun Hung Lai ◽

Chih Wen Lee

Keyword(s):

Thin Films ◽

Substrate Surface ◽

Sol Gel ◽

Random Access ◽

Gel Method ◽

Sol Gel Method ◽

Low Leakage ◽

Low Leakage Current ◽

Communication Devices ◽

Deposited Films

Electrical properties and microstructures of Mg(Zr0.05Ti0.95)O3 thin films prepared by sol-gel method on n-type Si(100) substrates at different annealing temperatures have been investigated. The diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. All films exhibited Mg(Zr0.05Ti0.95)O3 peaks orientation perpendicular to the substrate surface and the grain size with the increase in the annealing temperature. A low leakage current density of 1.1×10-4 A/cm2, a dielectric constant of 9.4 and an optical bandgap of 3.6 were obtained for the prepared films. It may find application in dynamic random access memories and wireless communication devices.

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