Effect of Hydrogen on the Properties of Amorphous Carbon Nitride Films

2011 ◽  
Vol 383-390 ◽  
pp. 3298-3304 ◽  
Author(s):  
Eliška Mikmeková ◽  
Michal Urbánek ◽  
Tomáš Fořt ◽  
Rosa Di Mundo ◽  
Ondřej Caha
Keyword(s):  
Amorphous Carbon ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Low Energy ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Low Energy Electron ◽  
Amorphous Carbon Nitride

The effect of hydrogen on the properties of amorphous carbon nitride films deposited onto Si substrates by magnetron sputtering device has been studied. The influence of hydrogen to roughness, porous character of films, composition and residual stress was investigated by atomic force microscopy, thermal desorption mass spectroscopy, X-ray photoelectron spectroscopy, scanning low energy electron microscopy and by goniometer equipped with Cu X-ray tube. The adding of hydrogen to nitrogen discharge a causes decrease in the high value of compressive stress (elimination of delamination of the films, increasing of nitrogen content in the bulk). On the other hand hydrogen increases roughness and porosity.

Investigation of the Effect of Uv-Assisted Oxidation and Nitridation of Hafnium Metal Films

2003 ◽  
Vol 780 ◽  
Author(s):  
C. Essary ◽  
V. Craciun ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Uv Radiation ◽  
Photoelectron Spectroscopy ◽  
Grazing Angle ◽  
X Ray Diffraction ◽  
Metal Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Silicon Interface

AbstractHf metal thin films were deposited on Si substrates using a pulsed laser deposition technique in vacuum and in ammonia ambients. The films were then oxidized at 400 °C in 300 Torr of O2. Half the samples were oxidized in the presence of ultraviolet (UV) radiation from a Hg lamp array. X-ray photoelectron spectroscopy, atomic force microscopy, and grazing angle X-ray diffraction were used to compare the crystallinity, roughness, and composition of the films. It has been found that UV radiation causes roughening of the films and also promotes crystallization at lower temperatures.Furthermore, increased silicon oxidation at the interface was noted with the UVirradiated samples and was shown to be in the form of a mixed layer using angle-resolved X-ray photoelectron spectroscopy. Incorporation of nitrogen into the film reduces the oxidation of the silicon interface.

X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES ON THE BONDING PROPERTIES OF AMORPHOUS CARBON NITRIDE FILMS SYNTHESIZED BY PULSED LASER DEPOSITION WITH DIFFERENT SUBSTRATE TEMPERATURES

2005 ◽  
Vol 12 (02) ◽  
pp. 185-195
Author(s):  
M. RUSOP ◽  
T. SOGA ◽  
T. JIMBO
Keyword(s):  
Pulsed Laser Deposition ◽  
Amorphous Carbon ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Measurement Techniques ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
Amorphous Carbon Nitride ◽  
Substrate Temperatures

Amorphous carbon nitride films ( a-CN x) were deposited by pulsed laser deposition of camphoric carbon target with different substrate temperatures (ST). The influence of ST on the synthesis of a-CN x films was investigated. The nitrogen-to-carbon (N/C) and oxygen-to-carbon (O/C) atomic ratios, bonding state, and microstructure of the deposited a-CN x films were characterized by X-ray photoelectron spectroscopy and were confirmed by other standard measurement techniques. The bonding states between C and N , and C and O in the deposited films were found to be significantly influenced by ST during the deposition process. The N/C and O/C atomic ratios of the a-CN x films reached the maximum value at 400°C. ST of 400°C was proposed to promote the desired sp 3-hybridized C and the C 3 N 4 phase. The C–N bonding of C–N , C=N and C≡N were observed in the films.

THE BONDING PROPERTIES OF AMORPHOUS CARBON NITRIDE FILMS BY THE MEANS OF X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES

2005 ◽  
Vol 19 (11) ◽  
pp. 1925-1942
Author(s):  
M. RUSOP ◽  
T. SOGA ◽  
T. JIMBO
Keyword(s):  
Amorphous Carbon ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Measurement Techniques ◽  
Deposition Process ◽  
Atomic Ratio ◽  
X Ray ◽  
Bonding Properties ◽  
Amorphous Carbon Nitride ◽  
Spectroscopy Studies

Amorphous carbon nitride films (a -CN x) were deposited by pulsed laser deposition of camphoric carbon target at different substrate temperatures (ST). The influence of ST on the bonding properties of a -CN x films was investigated. The nitrogen to carbon (N/C) atomic ratio and oxygen to carbon (O/C) atomic ratio, bonding state and microstructure of the deposited a -CN x films were characterized by X-ray photoelectron spectroscopy and confirmed by other standard measurement techniques. The bonding states between the C and N, and C and O in the deposited films are found significantly influenced by the ST during deposition process. The N/C and O/C atomic ratio of the a -CN x films reached the maximum value at 400°C. The ST of 400°C was proposed to promote the desired sp3-hybridized C and the C 3 N 4 phase. The C–N bonding of C–N, C=N and C–N were observed in the deposited a -CN x films.

Temperature Induced Phase Transformation on the 4H-SiC(11-20) Surface

2006 ◽  
Vol 527-529 ◽  
pp. 673-676 ◽  
Author(s):  
W.Y. Lee ◽  
S. Soubatch ◽  
Ulrich Starke
Keyword(s):  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Vacuum System ◽  
X Ray ◽  
Force Microscopy ◽  
Low Energy Electron Diffraction ◽  
Atomic Force ◽  
Surface Phases ◽  
Low Energy Electron

The atomic structure of the 4H-SiC(11 2 0) surface including possible phase transformations via Si deposition and annealing has been investigated using low energy electron diffraction (LEED), Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The sample is initially prepared by hydrogen etching before loading into the ultra-high vacuum system. The sample is then out-gassed to remove oxygen from the surface. To explore the existence of ordered surface phases, Si is deposited on the sample at 850°C for 15 minutes followed by a series of sequential annealing steps. Throughout this process, the surface is monitored by LEED, AES and XPS. LEED shows that the surface continuously maintains a (1×1) periodicity. Yet, two unique and distinguishable (1×1) phases can be identified. The changes between these phases are clearly demonstrated by the LEED spot intensities. Simultaneously, the Auger and XPS data show a decrease in Si intensity.

Atomic force microscopy and X-ray photoelectron spectroscopy characterization of low-energy ion sputtered mica

2007 ◽  
Vol 601 (13) ◽  
pp. 2735-2739 ◽  
Author(s):  
Renato Buzio ◽  
Andrea Toma ◽  
Andrea Chincarini ◽  
Francesco Buatier de Mongeot ◽  
Corrado Boragno ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Photoelectron Spectroscopy ◽  
Low Energy ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

Study of Amorphous Carbon Nitride Films by X-ray Photoelectron Spectroscopy

1999 ◽  
Vol 6 (3) ◽  
pp. 161-167 ◽  
Author(s):  
Dihu Chen ◽  
Aixing Wei ◽  
S. P. Wong ◽  
Shaoqi Peng ◽  
R. W. M. Kwok
Keyword(s):  
Amorphous Carbon ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
X Ray ◽  
Amorphous Carbon Nitride

X-ray photoelectron spectroscopy studies of the effects of plasma etching on amorphous carbon nitride films

2002 ◽  
Vol 193 (1-4) ◽  
pp. 144-148 ◽  
Author(s):  
Liudi Jiang ◽  
A.G Fitzgerald ◽  
M.J Rose ◽  
R Cheung ◽  
B Rong ◽  
...  
Keyword(s):  
Amorphous Carbon ◽  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
X Ray ◽  
Amorphous Carbon Nitride ◽  
Spectroscopy Studies

Growth and Characterization of Epitaxial Graphene on SiC Induced by Carbon Evaporation

2010 ◽  
Vol 645-648 ◽  
pp. 593-596
Author(s):  
Ameer Al-Temimy ◽  
Christian Riedl ◽  
Ulrich Starke
Keyword(s):  
Photoelectron Spectroscopy ◽  
Epitaxial Graphene ◽  
Low Energy ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Force Microscopy ◽  
Low Energy Electron Diffraction ◽  
Atomic Force ◽  
Graphene Lattice ◽  
Low Energy Electron

By carbon evaporation under ultrahigh vacuum (UHV) conditions, epitaxial graphene can be grown on SiC(0001) at significantly lower temperatures than with conventional Si sublimation. Therefore, the degradation of the initial SiC surface morphology can be avoided. The layers of graphene are characterized by low energy electron diffraction (LEED), angle resolved ultraviolet photoelectron spectroscopy (ARUPS), and atomic force microscopy (AFM). On SiC the graphene lattice is rotated by 30o in comparison to preparation by annealing in UHV alone.

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