Stability of the Vanadium Oxide Films Forme by Reactive Sputtering and Ion Beam Enhanced Deposition Methods

2011 ◽  
Vol 399-401 ◽  
pp. 589-592 ◽  
Author(s):  
Chang Liu ◽  
Mei Ping Jiang ◽  
Jin Hua Li ◽  
Sa Ke Wang

Vanadium oxide film is a common sensing film for infrared detector and uncooled infrared imaging devices, its stability directly affects the use of the thetse infrared devices.In this paper, high and low temperature cycles fatigue tests was used to check and compare the stability of the vanadium oxide films formed by different methods.The change of the temperature coefficient of resistance(TCR) and the room temperature resistance were measured and compared for the vanadium oxide film prepared by reactive sputtering and vanadium dioxide films by Ion Beam Enhanced Deposition(IBED) method. The result indicated tungsten doped Vanadium dioxide film by IBED is the most stable and has a higher TCR.

2020 ◽  
Vol 854 ◽  
pp. 103-108
Author(s):  
A.L. Pergament ◽  
O.Ya. Berezina ◽  
S.V. Burdyukh ◽  
V.P. Zlomanov ◽  
Evgeniy A. Tutov

Vanadium oxide films have been fabricated by the acetylacetonate and triethoxy vanadyl sol-gel methods on silicon substrates, as well as by magnetron sputtering on glass-ceramic substrates. Additional annealing in reducing atmosphere results in formation of vanadium dioxide or mixed phases with a VO2 predominance. The obtained films demonstrate the metal-insulator transition and electrical switching. In the films produced from triethoxy vanadyl, the peculiarities of electrical properties are related to the size effect, heterophase character of vanadium oxide films, and different types of charge carriers in the bulk of nanocrystallites and on their surfaces. Also, the effect of doping with hydrogen by means of plasma-immersion ion implantation on the properties of vanadium dioxide is explored. It is shown that the transition parameters in VO2 thin films depend on the hydrogen implantation dose. At doses exceeding a certain threshold value, the films are metallized, and the phase transition no longer occurs.


2007 ◽  
Vol 141 (3) ◽  
pp. 108-114 ◽  
Author(s):  
A. Khodin ◽  
Hak-In Hwang ◽  
Sung-Min Hong ◽  
V. Zalessky ◽  
T. Leonova ◽  
...  

2006 ◽  
Vol 928 ◽  
Author(s):  
Jason Kekas ◽  
Anuj Dhawan ◽  
Praveen Gollakota ◽  
John Muth

ABSTRACTVanadium dioxide films have long attracted attention because of the phase transition between the semiconducting state and the metallic state at 68 degrees centigrade. Vanadium oxide films have been prepared by a variety of methods, including the annealing and oxidation of evaporated vanadium under controlled conditions. In this study we explore a different route by producing amorphous and crystalline VOx films by pulsed laser deposition and annealing under a variety of conditions. We found that that in amorphous films grown at lower temperatures and then annealed, persistent photoconductivity effects can be observed, while in epitaxial crystalline films grown at high temperature, persistent effects were not observed. Furthermore, it was found that for some crystalline films persistent optical effects were observed and that optical hysteresis was dependent on the amount of time after the film anneal.


2006 ◽  
Author(s):  
S. Paradis ◽  
P. Mérel ◽  
P. Laou ◽  
D. Alain

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