Deposition of vanadium oxide films by direct‐current magnetron reactive sputtering

1988 ◽  
Vol 6 (3) ◽  
pp. 1663-1667 ◽  
Author(s):  
E. Kusano ◽  
J. A. Theil ◽  
John A. Thornton
Keyword(s):  
Vanadium Oxide ◽  
Direct Current ◽  
Oxide Films ◽  
Reactive Sputtering ◽  
Vanadium Oxide Films

Synthesis and characterization of vanadium oxide films by post-oxidation and reactive sputtering

2007 ◽  
Vol 141 (3) ◽  
pp. 108-114 ◽  
Author(s):  
A. Khodin ◽  
Hak-In Hwang ◽  
Sung-Min Hong ◽  
V. Zalessky ◽  
T. Leonova ◽  
...  
Keyword(s):  
Vanadium Oxide ◽  
Oxide Films ◽  
Reactive Sputtering ◽  
Synthesis And Characterization ◽  
Vanadium Oxide Films

Stability of the Vanadium Oxide Films Forme by Reactive Sputtering and Ion Beam Enhanced Deposition Methods

2011 ◽  
Vol 399-401 ◽  
pp. 589-592 ◽  
Author(s):  
Chang Liu ◽  
Mei Ping Jiang ◽  
Jin Hua Li ◽  
Sa Ke Wang
Keyword(s):  
Oxide Film ◽  
Vanadium Oxide ◽  
Vanadium Dioxide ◽  
Infrared Imaging ◽  
Ion Beam ◽  
Infrared Detector ◽  
Oxide Films ◽  
Reactive Sputtering ◽  
Fatigue Tests ◽  
Vanadium Oxide Films

Vanadium oxide film is a common sensing film for infrared detector and uncooled infrared imaging devices, its stability directly affects the use of the thetse infrared devices.In this paper, high and low temperature cycles fatigue tests was used to check and compare the stability of the vanadium oxide films formed by different methods.The change of the temperature coefficient of resistance(TCR) and the room temperature resistance were measured and compared for the vanadium oxide film prepared by reactive sputtering and vanadium dioxide films by Ion Beam Enhanced Deposition(IBED) method. The result indicated tungsten doped Vanadium dioxide film by IBED is the most stable and has a higher TCR.

Vanadium oxide films for optical modulation applications

2006 ◽  
Author(s):  
S. Paradis ◽  
P. Mérel ◽  
P. Laou ◽  
D. Alain
Keyword(s):  
Vanadium Oxide ◽  
Oxide Films ◽  
Optical Modulation ◽  
Vanadium Oxide Films

Structural transformation and functional properties of vanadium oxide films after low-temperature annealing

2014 ◽  
Vol 564 ◽  
pp. 179-185 ◽  
Author(s):  
Yu. Goltvyanskyi ◽  
I. Khatsevych ◽  
A. Kuchuk ◽  
V. Kladko ◽  
V. Melnik ◽  
...  
Keyword(s):  
Low Temperature ◽  
Vanadium Oxide ◽  
Functional Properties ◽  
Structural Transformation ◽  
Oxide Films ◽  
Low Temperature Annealing ◽  
Vanadium Oxide Films

Characterization and Electrochemical Performances of Vanadium Oxide Films Doped with Metal Ions

2013 ◽  
Vol 537 ◽  
pp. 174-178
Author(s):  
Ji Chao Wang ◽  
Guang Ming Wu ◽  
Guo Hua Gao ◽  
Xiao Wei Zhou
Keyword(s):  
Metal Ions ◽  
Vanadium Oxide ◽  
Volume Fraction ◽  
Electrochemical Impedance ◽  
Sol Gel ◽  
Electrochemical Techniques ◽  
Oxide Films ◽  
Dip Coating ◽  
Electrochemical Performances ◽  
Vanadium Oxide Films

Vanadium oxide films were prepared via the sol–gel process and dip coating method, using V2O5as raw materials and H2O2(volume fraction 30) as the solvent. Mn and Ni ions were added to vanadium oxide sol to prepare doping vanadium oxide films. The films were characterized by atomic force microscopy, FT-IR, X-ray diffraction and electrochemical techniques. The add-on of Metal ions will not affect the morphology of the vanadium oxide films, but change the valence of vanadium ion and vanadium oxide crystal phase. Furthermore, cyclic voltammetry curves show that metal ions doping vanadium oxide films exhibit reversible electrochemical reaction. But electrochemical impedance spectroscopy indicates pure vanadium oxide film has a better diffusion rate.

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