Self-Assembly Fabrication of the Polymer p-n Junction Film

2011 ◽  
Vol 421 ◽  
pp. 188-191
Author(s):  
Nai Di Tan ◽  
Yan Lin Zhang ◽  
Xi Wu Fan ◽  
Noriko Asano ◽  
Masayuki Toda ◽  
...  

The p-n junction film which consists of the conductive polymer of p type semiconductor of polyhexylthiophene (PAT-6) and n type one polyquinoline(PQ) was fabricated by self-assembly by applying novel stratified phase separation phenomenon that had been discovered previously by us. The film showed ideal characteristic I-V relationship of the diode device

2006 ◽  
Vol 62 (2) ◽  
pp. 29-33
Author(s):  
Naidi Tan ◽  
Noriko Asano ◽  
Katsuo Orihara ◽  
Rikiya Sato ◽  
Seiji Hirose ◽  
...  

CrystEngComm ◽  
2019 ◽  
Vol 21 (47) ◽  
pp. 7249-7259 ◽  
Author(s):  
Li-Na Zhu ◽  
Zhao-Peng Deng ◽  
Li-Hua Huo ◽  
Shan Gao

The self-assembly of d10 metal salts and two racemic bis(pyridyl) diamine ligands generates ten complexes, showing diverse helical and wavelike chains, (4,4) layers, as well as 3D sqc and uog nets.


2001 ◽  
Vol 666 ◽  
Author(s):  
Kazushige Ueda ◽  
Shin-ichiro Inoue ◽  
Sakyo Hirose ◽  
Hiroshi Kawazoe ◽  
Hideo Hosono

ABSTRACTMaterials design for transparent p-type conducting oxides was extended to oxysulfide system. LaCuOS was selected as a candidate for a transparent p-type semiconductor. It was found that the electrical conductivity of LaCuOS was p-type and controllable from semiconducting to semi-metallic states by substituting Sr2+ for La3+. LaCuOS films showed high transparency in the visible region, and the bandgap estimated was approximately 3.1 eV. Moreover, it was revealed that LaCuOS showed sharp excitonic absorption and emission at the bandgap edge, which is advantageous for optical applications. A layered oxysulfide, LaCuOS, was proposed to be a promising material for optoelectronic devices.


2011 ◽  
Vol 378-379 ◽  
pp. 663-667 ◽  
Author(s):  
Toempong Phetchakul ◽  
Wittaya Luanatikomkul ◽  
Chana Leepattarapongpan ◽  
E. Chaowicharat ◽  
Putapon Pengpad ◽  
...  

This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.


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