The Mean Projected Range and Range Straggling of Er Ions Implanted in 6h Silicon Carbide

2012 ◽  
Vol 463-464 ◽  
pp. 798-801
Author(s):  
Xi Feng Qin ◽  
Hui Ning Wang ◽  
Zi Wu Ji ◽  
Feng Xiang Wang ◽  
Gang Fu
Keyword(s):  
Silicon Carbide ◽  
Monte Carlo ◽  
Depth Distribution ◽  
Electronic Device ◽  
Monte Carlo Code ◽  
Experiment Data ◽  
Projected Range ◽  
The Mean ◽  
The Difference ◽  
Good Agreement

Due to the need to reduce electronic device sizes, it is very important to consider the depth distribution of ions implanted into a crystalline target. The mean projected ranges and range straggling for energetic 200-500 keV Er ions implanted in 6H-SiC were measured by means of Rutherford backscattering followed by spectrum analysis. The measured values are compared with Monte Carlo code (SRIM2010) calculations. It has been found that the measured values of the mean projected range RP are good agreement with the SRIM calculated values; for the range straggling ΔRp, the difference between the experiment data and the calculated results is much higher than that of Rp.

The Mean Projected Range and Range Straggling of Nd Ions Implanted in Silicon Carbide

2011 ◽  
Vol 474-476 ◽  
pp. 565-569
Author(s):  
Xi Feng Qin ◽  
Shuang Li ◽  
Feng Xiang Wang ◽  
Yi Liang
Keyword(s):  
Silicon Carbide ◽  
Monte Carlo ◽  
Spectrum Analysis ◽  
Monte Carlo Code ◽  
Experiment Data ◽  
Lateral Deviation ◽  
Projected Range ◽  
The Mean ◽  
The Difference ◽  
Good Agreement

In view of the influence of the projected range, the range straggling, and the lateral deviation of ions in materials on the property of device in the fabrication of photoelectric integration devices by ion implantation, the mean projected ranges and range straggling for energetic 200 – 500 keV Nd ions implanted in 6H-SiC were measured by means of Rutherford backscattering followed by spectrum analysis. The measured values are compared with Monte Carlo code (SRIM2006) calculations. It has been found that the measured values of the mean projected range Rp are good agreement with the SRIM calculated values; for the range straggling △Rp, the difference between the experiment data and the calculated results is much higher than that of Rp

The Range Distribution of Yb Ions Implanted in 6H Silicon Carbide

2014 ◽  
Vol 599-601 ◽  
pp. 160-163
Author(s):  
Xi Feng Qin ◽  
Gui Jie Ma ◽  
Shu Hua Shi ◽  
Feng Xiang Wang
Keyword(s):  
Silicon Carbide ◽  
Monte Carlo ◽  
Spectrum Analysis ◽  
Monte Carlo Code ◽  
Experiment Data ◽  
Range Distribution ◽  
Projected Range ◽  
The Mean ◽  
The Difference ◽  
Good Agreement

The mean projected ranges and range straggling for energetic 200 – 500 keV Yb ions implanted in 6H-SiC were measured by means of Rutherford backscattering followed by spectrum analysis. The measured values are compared with Monte Carlo code (SRIM2012) calculations. It has been found that the measured values of the mean projected range are good agreement with the SRIM calculated values; for the range straggling , the difference between the experiment data and the calculated results is much higher than that of .

The Range Distribution of Nd Ions Implanted in Silicon-on-Insulator

2011 ◽  
Vol 306-307 ◽  
pp. 315-318
Author(s):  
Yi Liang ◽  
Hong Zhen Li ◽  
Shuang Li ◽  
Feng Xiang Wang ◽  
Xi Feng Qin
Keyword(s):  
Monte Carlo ◽  
Room Temperature ◽  
Silicon On Insulator ◽  
Monte Carlo Code ◽  
Experiment Data ◽  
Lateral Deviation ◽  
Projected Range ◽  
The Mean ◽  
The Difference ◽  
Good Agreement

In view of the influence of the projected range, the range straggling, and the lateral deviation of ions in materials on the property of photoelectric integration devices fabricated by ion implantation, the mean projected ranges and range straggling for energetic 200 – 500 keV neodymium (Nd) ions implanted in silicon-on-insulator (SOI) at room temperature were measured by means of Rutherford backscattering followed by spectrum analysis.The measured results are compared with Monte Carlo code (SRIM2006) predictions. Our results show that the measured values of the mean projected rangeRpare good agreement with the SRIM calculated values; for the range straggling ΔRp, the difference between the experiment data and the calculated results is much higher than that ofRp.

Investigation of the Range Distribution of Yb Ions Implanted in SOI

2014 ◽  
Vol 488-489 ◽  
pp. 269-272
Author(s):  
Xi Feng Qin ◽  
Gui Jie Ma ◽  
Shu Hua Shi ◽  
Gang Fu
Keyword(s):  
Monte Carlo ◽  
Spectrum Analysis ◽  
Silicon On Insulator ◽  
Monte Carlo Code ◽  
Experiment Data ◽  
Range Distribution ◽  
Projected Range ◽  
The Mean ◽  
The Difference ◽  
Good Agreement

The mean projected ranges and range straggling for energetic 200 500 keV Yb ions implanted in silicon-on-insulator (SOI) were measured by means of Rutherford backscattering followed by spectrum analysis. The measured values are compared with Monte Carlo code (SRIM2012) calculations. It has been found that the measured values of the mean projected range are good agreement with the SRIM calculated values; for the range straggling , the difference between the experiment data and the calculated results is much higher than that of .

The Range Distribution of Nd Ions Implanted in Silicon Crystal

2011 ◽  
Vol 214 ◽  
pp. 593-596
Author(s):  
Xi Feng Qin ◽  
Shuang Li ◽  
Feng Xiang Wang ◽  
Yi Liang
Keyword(s):  
Electronic Device ◽  
Silicon Crystal ◽  
Single Crystal Silicon ◽  
Monte Carlo Code ◽  
Experiment Data ◽  
Crystal Silicon ◽  
Projected Range ◽  
The Mean ◽  
The Difference ◽  
Good Agreement

Due to the need to reduce electronic device sizes, it is very important to consider the depth distribution of ions implanted into a crystalline target. The mean projected ranges and range straggling for energetic 200 – 500 keV Nd ions implanted in single crystal silicon (c-Si) at room temperature were measured by means of Rutherford backscattering followed by spectrum analysis. The measured results are compared with Monte Carlo code (SRIM2006) predictions. Our results show that the measured values of the mean projected range are good agreement with the SRIM calculated values; for the range straggling , the difference between the experiment data and the calculated results is much higher than that of .

The Mean Projected Range and Range Straggling of Er Ions Implanted in Silicon-On-Insulator

2011 ◽  
Vol 214 ◽  
pp. 522-525
Author(s):  
Xi Feng Qin ◽  
Shuang Li ◽  
Feng Xiang Wang ◽  
Yi Liang
Keyword(s):  
Monte Carlo ◽  
Silicon On Insulator ◽  
Lateral Spread ◽  
Semiconductor Materials ◽  
Monte Carlo Code ◽  
Experiment Data ◽  
Projected Range ◽  
The Mean ◽  
The Difference ◽  
Good Agreement

It is very important to consider the distribution of range, range straggling and lateral spread of ions implanted into semiconductor materials in design and fabrication of semiconductor integration devices by ion implantation. The mean projected ranges and range straggling for energetic 200 – 500 keV Er ions implanted in silicon-on-insulator (SOI) were measured by means of Rutherford backscattering followed by spectrum analysis. The measured values are compared with Monte Carlo code (SRIM2006) calculations. It has been found that the measured values of the mean projected range are good agreement with the SRIM calculated values; for the range straggling , the difference between the experiment data and the calculated results is much higher than that of .

The Mean Projected Range and Range Straggling of Yb Ions Implanted in Silicon Crystal

2012 ◽  
Vol 476-478 ◽  
pp. 1249-1253
Author(s):  
Xi Feng Qin ◽  
Hui Ning Wang ◽  
Zi Wu Ji ◽  
Feng Xiang Wang ◽  
Gang Fu
Keyword(s):  
Room Temperature ◽  
Silicon Crystal ◽  
Single Crystal Silicon ◽  
Monte Carlo Code ◽  
Experiment Data ◽  
Crystal Silicon ◽  
Projected Range ◽  
The Mean ◽  
The Difference ◽  
Good Agreement

The mean projected ranges and range straggling for energetic 200 – 500 keV Yb ions implanted in single crystal silicon (c-Si) at room temperature were measured by means of Rutherford backscattering followed by spectrum analysis. The measured results are compared with Monte Carlo code (SRIM2010) predictions. Our results show that the measured values of the mean projected range Rp are good agreement with the SRIM calculated values; but the difference of the range straggling ΔRp between the experiment data and the calculated results is much higher than that of Rp.

The Range Distribution of Er Ions Implanted in Silicon Crystal

2011 ◽  
Vol 474-476 ◽  
pp. 178-182
Author(s):  
Xi Feng Qin ◽  
Yi Liang ◽  
Feng Xiang Wang
Keyword(s):  
Room Temperature ◽  
Depth Distribution ◽  
Electronic Device ◽  
Silicon Crystal ◽  
Single Crystal Silicon ◽  
Monte Carlo Code ◽  
Crystal Silicon ◽  
The Mean ◽  
Amorphous Si ◽  
Experimental Values

Due to the need to reduce electronic device sizes, it is very important to consider the depth distribution of ions implanted into a crystalline target. The mean projected ranges and range straggling for energetic 150 – 500 keV Er ions implanted in single crystal silicon (c-Si) at room temperature were measured by means of Rutherford backscattering followed by spectrum analysis. The measured results are compared with other experimental data for amorphous Si (a-Si) and Monte Carlo code (SRIM2006) predictions. Our results show that, although the experimental values for range and range straggling exceed the SRIM calculations, they are nevertheless consistent with trends that have been previously observed for a-Si.

scholarly journals Universal dependence of the total number albedo of photons on the mean number of photon scatterings

2011 ◽  
Vol 26 (3) ◽  
pp. 249-253 ◽  
Author(s):  
Vladan Ljubenov ◽  
Rodoljub Simovic
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Analytic Functions ◽  
Least Squares Method ◽  
Mcnp Code ◽  
Initial Photon ◽  
Aluminum Iron ◽  
Universal Dependence ◽  
The Mean ◽  
Good Agreement

This paper presents the results of research on photon reflection from plane targets based on Monte Carlo simulations performed by the MCNP code. Five materials (water, concrete, aluminum, iron, and copper) are examined in the area of initial photon energies of up to 200 keV. The values of the total number albedo for photons dependent on the initial photon energy or the mean number of photon scatterings are calculated and graphically presented. We have shown that the values of the total number albedo for different target materials, expressed as a function of the mean number of photon scatterings, are in good agreement with each other and can be approximated by simple, universal analytic functions obtained by the least squares method. The accuracy of these analytic appoximations is confirmed by their comparison with the results of PENELOPE and FOTELP Monte Carlo codes.

Determination of CR-39 and LR-115 Type II Mean Critical Angle of Etching Using a New Monte Carlo Code

2020 ◽  
Author(s):  
Hicham Harrass ◽  
Abdellatif Talbi ◽  
Rodouan Touti
Keyword(s):  
Monte Carlo ◽  
Alpha Particle ◽  
Critical Angle ◽  
Current Method ◽  
Particle Energy ◽  
Alpha Particles ◽  
Monte Carlo Code ◽  
Type Ii ◽  
Alpha Particle Energy ◽  
The Mean

Abstract CR-39 and LR-115 type II solid state nuclear track detectors (SSNTDs) are both used, in order to assess the concentration of nucleus belonging to 238U and 232Th series, these ones can be also used to measure radon 222Rn and thoron 220Rn gases in different locations. In this paper, a Monte Carlo code was developed to calculate the mean critical angle for which alpha particles emitted from 238U and 232Th families in studied material samples reach CR-39 and LR-115 type II surfaces and bring about latent tracks on them. The dependence of the SSNTDs mean critical angle on the removed thickness, the initial alpha particle energy has been studied. A linear relationship between CR-39 mean critical angle and the initial alpha particle energy for different removed thicknesses has been found. This straightforward relationship allows determining quickly the mean critical angle of etching which corresponds to initial alpha particle energy for a given removed thickness. CR-39 mean critical angle ranged from 59° for an alpha particle emitted by 212Po to 71° for an alpha particle emitted by 232Th, for the value of removed thickness of 6 µm; whereas LR-115 type II mean critical angle does not depend on the initial alpha particle energy except for 232Th, 238U, 230Th and 234Ra when the removed thickness ranged from 6 µm to 8 µm. Obtained data by using the current method and those obtained in the literature [18] are in good agreement with each other.

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