Material Engineering for Low Power Consumption and Multi-Level Storage in Lateral Phase-Change Memory
2012 ◽
Vol 490-495
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pp. 3286-3290
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The influence of the phase-change materials on the performance of memory devices for low power consumption and multi-level storage was investigated in this work. Doping N into chalcogenide phase-change materials resulted in higher resistivity and low-response to the temperature. The former characteristic leaded to high heating efficiency for phase change via self-heating and thus reduced the power consumption to about 1/20. The latter characteristic enabled easy control of phase change process in the memory device for multi-level storage. 16 distinct resistance levels were demonstrated in our lateral device by adopting a top heater structure
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2019 ◽
Vol 8
(10)
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pp. P563-P566
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2012 ◽
Vol 163
◽
pp. 321-325
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2015 ◽
Vol 27
(3)
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pp. 2183-2188
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2009 ◽
Vol 26
(11)
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pp. 118101
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