Effect of the ZnO Buffer Layer Thickness on AZO Film Properties

To evaluate the influence of the ZnO buffer layer thickness on structural, electrical and optical properties of ZnO: Al (AZO)/ZnO bi-layer films, a series of AZO/ZnO films were deposited on the quartz substrates by electron beam evaporation. X-ray diffraction measurement shows that the crystal quality of the films is improved with the increase of the film thickness. The electrical properties results show that the resistivity decreases initial and then increases. However, optical transmittance of all the films is >80% regardless of the buffer layer thickness in the visible region. The results illustrate that the insertion of ZnO buffer layer can improve the film performance.

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Effects of ZnO buffer layer thickness on properties of ZnO thin films deposited by low-pressure MOCVD

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2003.10.079 ◽

2004 ◽

Vol 262 (1-4) ◽

pp. 456-460 ◽

Cited By ~ 42

Author(s):

Yuantao Zhang ◽

Guotong Du ◽

Boyang Liu ◽

HuiChao Zhu ◽

Tianpeng Yang ◽

...

Keyword(s):

Thin Films ◽

Buffer Layer ◽

Layer Thickness ◽

Low Pressure ◽

Zno Thin Films ◽

Low Pressure Mocvd ◽

Buffer Layer Thickness ◽

Zno Buffer Layer

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Growth and characteristics of ZnO films on growth side of freestanding diamond substrate dependent on buffer layer thickness

Thin Solid Films ◽

10.1016/j.tsf.2010.03.071 ◽

2010 ◽

Vol 518 (19) ◽

pp. 5396-5399 ◽

Cited By ~ 8

Author(s):

Shiyong Gao ◽

Hongdong Li ◽

Junwei Liu ◽

Yingai Li ◽

Xianyi Lü ◽

...

Keyword(s):

Buffer Layer ◽

Layer Thickness ◽

Zno Films ◽

Diamond Substrate ◽

Buffer Layer Thickness

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Effects of the AlN buffer layer thickness on the properties of ZnO films grown on c-sapphire substrate by pulsed laser deposition

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2012.08.117 ◽

2013 ◽

Vol 554 ◽

pp. 104-109 ◽

Cited By ~ 13

Author(s):

H. Xiong ◽

J.N. Dai ◽

Xiong Hui ◽

Y.Y. Fang ◽

W. Tian ◽

...

Keyword(s):

Pulsed Laser Deposition ◽

Buffer Layer ◽

Layer Thickness ◽

Sapphire Substrate ◽

Pulsed Laser ◽

Laser Deposition ◽

Zno Films ◽

Buffer Layer Thickness ◽

Aln Buffer

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Effects of ZnO buffer layer thickness on properties of ZnO thin films deposited by radio-frequency magnetron sputtering

Applied Surface Science ◽

10.1016/s0169-4332(03)00005-9 ◽

2003 ◽

Vol 207 (1-4) ◽

pp. 359-364 ◽

Cited By ~ 80

Author(s):

Kyu-Hyun Bang ◽

Deuk-Kyu Hwang ◽

Jae-Min Myoung

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Buffer Layer ◽

Layer Thickness ◽

Radio Frequency Magnetron ◽

Zno Thin Films ◽

Radio Frequency Magnetron Sputtering ◽

Buffer Layer Thickness ◽

Zno Buffer Layer

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Influence of ZnO buffer layer thickness on electrical and optical properties of GZO thin films deposited on polymer substrates

Materials Science and Technology ◽

10.1179/174328407x158721 ◽

2007 ◽

Vol 23 (3) ◽

pp. 303-306 ◽

Cited By ~ 8

Author(s):

S. Kim ◽

W. Lee ◽

C. Lee

Keyword(s):

Thin Films ◽

Optical Properties ◽

Buffer Layer ◽

Layer Thickness ◽

Electrical And Optical Properties ◽

Polymer Substrates ◽

Buffer Layer Thickness ◽

Zno Buffer Layer

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Plasma-Assisted Molecular-Beam Epitaxy of ZnO Films on (0001) Al2O3: Effects of the MgO Buffer Layer Thickness

Journal of the Korean Physical Society ◽

10.3938/jkps.53.271 ◽

2008 ◽

Vol 53 (1) ◽

pp. 271-275 ◽

Cited By ~ 1

Author(s):

Jae Goo Kim ◽

Seok Kyu Han ◽

Dong-Suk Kang ◽

Sang Mo Yang ◽

Soon-Ku Hong ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Buffer Layer ◽

Layer Thickness ◽

Molecular Beam ◽

Zno Films ◽

Buffer Layer Thickness

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Non-Toxic Buffer Layers in Flexible Cu(In,Ga)Se2Photovoltaic Cell Applications with Optimized Absorber Thickness

International Journal of Photoenergy ◽

10.1155/2017/4561208 ◽

2017 ◽

Vol 2017 ◽

pp. 1-8 ◽

Cited By ~ 9

Author(s):

Md. Asaduzzaman ◽

Md. Billal Hosen ◽

Md. Karamot Ali ◽

Ali Newaz Bahar

Keyword(s):

Buffer Layer ◽

Layer Thickness ◽

Energy Conversion Efficiency ◽

Absorber Layer ◽

Buffer Layers ◽

Reference Type ◽

Buffer Layer Thickness ◽

Simulation Results ◽

Zno Buffer Layer ◽

Better Than

Absorber layer thickness gradient in Cu(In1−xGax)Se2(CIGS) based solar cells and several substitutes for typical cadmium sulfide (CdS) buffer layers, such as ZnS, ZnO, ZnS(O,OH), Zn1−xSnxOy(ZTO), ZnSe, and In2S3, have been analyzed by a device emulation program and tool (ADEPT 2.1) to determine optimum efficiency. As a reference type, the CIGS cell with CdS buffer provides a theoretical efficiency of 23.23% when the optimum absorber layer thickness was determined as 1.6 μm. It is also observed that this highly efficient CIGS cell would have an absorber layer thickness between 1 μm and 2 μm whereas the optimum buffer layer thickness would be within the range of 0.04–0.06 μm. Among all the cells with various buffer layers, the best energy conversion efficiency of 24.62% has been achieved for the ZnO buffer layer based cell. The simulation results with ZnS and ZnO based buffer layer materials instead of using CdS indicate that the cell performance would be better than that of the CdS buffer layer based cell. Although the cells with ZnS(O,OH), ZTO, ZnSe, and In2S3buffer layers provide slightly lower efficiencies than that of the CdS buffer based cell, the use of these materials would not be deleterious for the environment because of their non-carcinogenic and non-toxic nature.

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