Material Removal Mechanism in Vibration-Assisted Finishing

2009 ◽  
Vol 69-70 ◽  
pp. 158-162 ◽  
Author(s):  
Yu Wang ◽  
Shao Hui Yin ◽  
Takeo Shinmura
Keyword(s):  
Material Removal Rate ◽  
Vibration Frequency ◽  
Material Removal ◽  
Removal Rate ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Finishing Process ◽  
Vibration Assistance

In this paper, it is explored the material removal mechanism in vibration-assisted finishing process. On the basis of some experiments, the finishing characteristics are represented summarily. Though the analysis, it is shown that the vibration assistance method may increase cutting distance and speed of abrasive and material removal in per unit finishing distance which is affected by vibration frequency and amplitude, in-process abrasives behavior. What more, the increase in material removal rate is mainly due to an increase in material removal per unit finishing distance which is affected by the effects of abrasives cross-cutting.

Material Removal Mechanism in Vibration-Assisted Magnetic Abrasive Finishing

2008 ◽  
Vol 53-54 ◽  
pp. 57-63 ◽  
Author(s):  
Shao Hui Yin ◽  
Yu Wang ◽  
Takeo Shinmura ◽  
Yong Jian Zhu ◽  
Feng Jun Chen
Keyword(s):  
Material Removal ◽  
Removal Rate ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Magnetic Abrasive Finishing ◽  
Finishing Process ◽  
Abrasive Finishing ◽  
Vibration Assistance ◽  
Series Of Experiments ◽  
Working Distance

This paper proposed a viewpoint to explain why vibration assistance may increase material removal rate (MRR) in vibration-assisted magnetic abrasive finishing process. A series of experiments on vibration-assisted finishing have been carried out. On the basis of these experiments, the finishing characteristics are represented summarily. It was shown that the increase in material rate is mainly due to an increase in material removal per unit working distance.

Modeling of Material Removal Mechanism in Micro Electric Discharge Milling of Ti-6Al-4V

2014 ◽  
Vol 592-594 ◽  
pp. 516-520 ◽  
Author(s):  
Basil Kuriachen ◽  
Jose Mathew
Keyword(s):  
Material Removal Rate ◽  
Feed Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Milling Process ◽  
Work Piece ◽  
Machining Parameters ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Electric Discharge Milling

Micro EDM milling process is accruing a lot of importance in micro fabrication of difficult to machine materials. Any complex shape can be generated with the help of the controlled cylindrical tool in the pre determined path. Due to the complex material removal mechanism on the tool and the work piece, a detailed parametric study is required. In this study, the influence of various process parameters on material removal mechanism is investigated. Experiments were planned as per Response Surface Methodology (RSM) – Box Behnken design and performed under different cutting conditions of gap voltage, capacitance, electrode rotation speed and feed rate. Analysis of variance (ANOVA) was employed to identify the level of importance of machining parameters on the material removal rate. Maximum material removal rate was obtained at Voltage (115V), Capacitance (0.4μF), Electrode rotational Speed (1000rpm), and Feed rate (18mm/min). In addition, a mathematical model is created to predict the material removal

Study on Chemical Mechanical Polishing Removal Mechanism of Monocrystalline Silicon

2014 ◽  
Vol 538 ◽  
pp. 40-43
Author(s):  
Hong Wei Du ◽  
Yan Ni Chen
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Silicon Wafers ◽  
Monocrystalline Silicon ◽  
Mechanical Polishing ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Polishing Pressure

In this paper, material removal mechanism of monocrystalline silicon by chemical etching with different solutions were studied to find effective oxidant and stabilizer. Material removal mechanism by mechanical loads was analyzed based on the measured acoustic signals in the scratching processes and the observation on the scratched surfaces of silicon wafers. The chemical mechanical polishing (CMP) processes of monocrystalline silicon wafers were analyzed in detail according to the observation and measurement of the polished surfaces with XRD. The results show that H2O2 is effective oxidant and KOH stabilizer. In a certain range, the higher concentration of oxidant, the higher material removal rate; the higher the polishing liquid PH value, the higher material removal rate. The polishing pressure is an important factor to obtain ultra-smooth surface without damage. Experimental results obtained silicon polishing pressure shall not exceed 42.5kPa.

scholarly journals Modeling and Analysis of the Material Removal Rate for Ultrasonic Vibration-assisted Polishing of Optical Glass BK7

2021 ◽  
Author(s):  
Yingdong Liang ◽  
Chao Zhang ◽  
Xin Chen ◽  
Tianqi Zhang ◽  
Tianbiao Yu ◽  
...  
Keyword(s):  
Ultrasonic Vibration ◽  
Material Removal Rate ◽  
Material Removal ◽  
Optical Glass ◽  
Removal Rate ◽  
Machining Accuracy ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Abrasive Particles ◽  
Material Removal Model

Abstract The emergence of ultrasonic vibration-assisted polishing technology has effectively improved the machining accuracy and efficiency of hard and brittle materials in modern optical industry, however, the material removal mechanism of ultrasonic vibration-assisted polishing (UVAP) still needs to be further revealed. This paper focuses on the material removal mechanism of ultrasonic vibration-assisted polishing of optical glass (BK7), the application of ultrasonic vibration to axial vibration and the atomization of polishing slurry, the material removal model was established. Based on the analysis of the relationship between the nominal distance d of the polishing pad and the actual contact area distribution, the prediction of the material removal profile is realized. In addition, the effects of different parameters on the material removal rate (MRR) were analyzed, including polishing force, spindle speed, abrasive particle size, ultrasonic amplitude, feed rate, and flow-rate of polishing slurry. Based on the motion equation of abrasive particles, the trajectory of abrasive particles in the polishing slurry was simulated, and the simulation results show that the introduction of the ultrasonic vibration field changes the motion state and trajectory of embedded and free abrasive particles. The new model can not only qualitatively analyze the influence of different process parameters on MRR, but also predict the material removal depth and MRR, providing a possibility for deterministic material removal and a theoretical basis for subsequent polishing of complex curved surfaces of optical glass.

Study on the Finishing Process for the Aluminum Nitride Substrates

2009 ◽  
Vol 69-70 ◽  
pp. 282-286
Author(s):  
Zhao Zhong Zhou ◽  
Ju Long Yuan ◽  
Bing Hai Lv
Keyword(s):  
Surface Roughness ◽  
Aluminum Nitride ◽  
Material Removal ◽  
Smooth Surface ◽  
Removal Rate ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Finishing Process ◽  
Ultra Precision

Aluminum nitride (AlN) ceramic has excellent electrical insulation and dielectric properties. The ultra-precision lapping and polishing techniques for the AlN substrate are studied in this paper, and the influence of the lapping parameters such as load and slurry on the surface roughness, material removal rate of AlN is discussed. The surface of workpiece after processing is observed with microscope to analyze the material removal mechanism. An extremely smooth surface with roughness 6nm Ra is obtained after the finishing process. It is also found that the gap between grains will decrease the precision and quality of AlN substrate.

Study on Fixed Abrasive Lapping Technology for Ceramic Balls

2006 ◽  
Vol 532-533 ◽  
pp. 460-463 ◽  
Author(s):  
Bing Hai Lv ◽  
Ju Long Yuan ◽  
Ying Xue Yao ◽  
Zhi Wei Wang
Keyword(s):  
Silicon Nitride ◽  
Material Removal Rate ◽  
Wear Mechanism ◽  
Material Removal ◽  
Removal Rate ◽  
Finishing Process ◽  
Photosensitive Resin ◽  
Ball Surface ◽  
Fixed Abrasive ◽  
Free Abrasive

To improve low lapping efficiency of silicon nitride balls in conventional lapping process, fixed abrasive lapping technology for ceramic balls is investigated in this paper. Diamond abrasives and photosensitive resin are used to fabricate the fixed abrasive plate. The lapped ball surface is observed with microscopy to identify the dominant wear mechanism. The results show that the material removal rate of the fixed abrasive lapping is about 20 times of that of conventional free abrasive lapping process, and the roughness is close to the conventional one. The experimental results indicate that the fixed abrasive lapping technology is a promising process to instead of conventional free abrasive lapping process for ceramic balls in rough and semi-finishing process.

Study on Chemical Mechanical Polishing Mechanism of LiTaO3 Wafer

2006 ◽  
Vol 304-305 ◽  
pp. 310-314
Author(s):  
Xin Wei ◽  
Hui Yuan ◽  
H.W. Du ◽  
Wei Xiong ◽  
Rui Wei Huang
Keyword(s):  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Acoustic Signals ◽  
Mechanical Action ◽  
Mechanical Polishing ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Mechanical Loads ◽  
Crystal Wafer

In this paper, the scratching processes by a diamond indentor under the loads linearly increased from zero were studied to assess the mechanical behavior of LiTaO3 crystal wafer. Material removal mechanism of LiTaO3 crystal by mechanical loads was analyzed based on the measured acoustic signals in the scratching processes and the observation on the scratched surfaces of LiTaO3 wafers. The chemical mechanical polishing (CMP) processes of LiTaO3 wafers were analyzed in detail according to the observation and measurement of the polished surfaces of LiTaO3 wafers with SEM and XRD. The research results show that there exist four regimes along the scratched groove with the increasing of down force in a scratching process of LiTaO3 crystal wafer, and the critical load for each regime is affected by the loading speed and final load, etc. When H2O2 and KOH are added into the polishing slurry, the material of LiTaO3 wafer is removed by chemical reaction and mechanical action sequentially in the CMP processes, and the material removal rate increases while the surface roughness is improved.

scholarly journals Experimental Investigation of the Effect of Process Parameters on Material Removal Rate and Surface Finish

2020 ◽  
pp. 46-50
Author(s):  
S. Sudharsan
Keyword(s):  
Experimental Investigation ◽  
Process Parameters ◽  
Material Removal Rate ◽  
Surface Finish ◽  
Material Removal ◽  
Removal Rate ◽  
Optimum Combination ◽  
Taguchi Design Of Experiments ◽  
Finishing Process ◽  
Series Of Experiments

Lapping is a finishing process used especially for removing the material, achieving finer surfaces, correcting minor imperfections and maintaining close tolerances. This process may takes place due to the relative motion between the work material, slurry and lapping plate. This study is done by conducting a series of experiments based on taguchi design of experiments and calculating material removal rate and surface roughness. This study explains about effect of the parameters on material removal rate and surface finish. The final step of this process is to find out the optimum combination of process parameters to determine the material removal rate and the surface finish.

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