Compatibility Study of Diamond-Like Nanocomposite Thin Films with Hydrazine Propellant for MEMS Microthruster

2009 ◽  
Vol 74 ◽  
pp. 269-272 ◽  
Author(s):  
Pijus Kundu ◽  
A. Ray Chaudhuri ◽  
S. Das ◽  
T.K. Bhattacharyya
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Substrate ◽  
Base Material ◽  
Chemical Vapor ◽  
Compatibility Study ◽  
Nanocomposite Thin Films ◽  
Silicon Based

In this paper, the etching characteristic of diamond like nanocomposite thin films materials in hydrazine has been reported. The experiments have been carried out to explore the compatibility of hydrazine as a propellant with silicon based microthruster. In the reported work, 2″ N-type (100) silicon wafer with 4-6 Ω cm resistivity were used as base material. Diamond-like nanocomposite (DLN) films are deposited on silicon substrate by plasma enhanced chemical vapor deposition (PECVD) process using siloxane or silazane based precursors or their combinations. Thickness of deposited DLN thin films is around 1 µm. DLN samples are treated in 98% hydrazine at 25 °C, 70 °C and 90 °C for different time and etch rates and subsequently the change in refractive index of the DLN films if any has been measured.

SiO2/TiO2 thin films with variable refractive index prepared by ion beam induced and plasma enhanced chemical vapor deposition

2006 ◽  
Vol 500 (1-2) ◽  
pp. 19-26 ◽  
Author(s):  
F. Gracia ◽  
F. Yubero ◽  
J.P. Holgado ◽  
J.P. Espinos ◽  
A.R. Gonzalez-Elipe ◽  
...  
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Tio2 Thin Films

A Drastic Change in Structure and Property of TiO2 Thin Films Deposited by Metal-Organic Chemical Vapor Deposition With Deposition Temperature

2000 ◽  
Vol 616 ◽  
Author(s):  
Jeong-Hoon Park ◽  
Woon-Jo Cho ◽  
Kug-Sun Hong
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Refractive Index ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractTiO2 thin films were deposited by metal-organic chemical vapor deposition (MOCVD) method using titanium tetraisopropoxide(TTIP). A drastic change in structural aspect and its property occurred when the deposition temperature increased above 400°C. Deposition kinetics was proved to transit from reaction controlled regime into diffusion controlled regime above about 400°C in Arrehnius plot. In X-ray diffraction (XRD)and infrared reflectance spectra, it was observed that the crystallinity was decreased significantly around 400°C. The surface microstructure has changed explicitly from dense structure with larger grains to porous one with smaller grains observed by scanning electron microscopy and transmission electron microscopy. Electrical resistance of the films jumped by 2 orders of magnitude, which is measured by the 4-point probe method. The refractive index calculated by Swanepoel's method has decreased from 2.45 to 2.28 at 630nm. The porous microstructure of films deposited at above 400°C was thought to be responsible for the significant decrease in electrical conductivity and refractive index of the films.

Sign in / Sign up

Export Citation Format

Share Document