Formation of Silicon-Based Thin Films Prepared by Catalytic Chemical Vapor Deposition (Cat-CVD) Method

In this paper, we present the properties of I-doped CuI thin films at different concentration of iodine dopant (e.g. 10mg, 20mg, 30mg, 40mg and 100mg). The doping of CuI was done by using double furnace chemical vapor deposition (CVD) method. The effects of I-doped CuI to its surface morphology and electrical were studied. The effect of iodine doping to surface morphology was measured by field emission scanning electron microscopy (FESEM). The morphology of all thin films shows insignificance changes in grain size, grain boundaries and particle structure as the doping concentration varies. For the electrical properties, high current at constant voltage of-5V to 5V was obtained. The resistivity of 10-1 was obtained for undoped CuI thin films. While, for the series of I-doped CuI thin films, the resistivity of 10-2 was obtained. The excess of hole conductor in the I-doped CuI thin films enhances the electrical conductivity of the films.

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Low-Resistivity Phosphorus-Doped Polycrystalline Silicon Thin Films Formed by Catalytic Chemical Vapor Deposition and Successive Rapid Thermal Annealing

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.501 ◽

2002 ◽

Vol 41 (Part 1, No. 2A) ◽

pp. 501-506 ◽

Cited By ~ 13

Author(s):

Rui Morimoto ◽

Akira Izumi ◽

Atsushi Masuda ◽

Hideki Matsumura

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Vapor Deposition ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Catalytic Chemical Vapor Deposition ◽

Silicon Thin Films ◽

Phosphorus Doped

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Fabrication of PTFE thin films by dual catalytic chemical vapor deposition method

Thin Solid Films ◽

10.1016/j.tsf.2007.06.185 ◽

2008 ◽

Vol 516 (5) ◽

pp. 687-690 ◽

Cited By ~ 26

Author(s):

Hiroaki Yasuoka ◽

Masahiro Yoshida ◽

Ken Sugita ◽

Keisuke Ohdaira ◽

Hideyuki Murata ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Chemical Vapor Deposition Method ◽

Deposition Method ◽

Catalytic Chemical Vapor Deposition

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Compatibility Study of Diamond-Like Nanocomposite Thin Films with Hydrazine Propellant for MEMS Microthruster

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.74.269 ◽

2009 ◽

Vol 74 ◽

pp. 269-272 ◽

Cited By ~ 1

Author(s):

Pijus Kundu ◽

A. Ray Chaudhuri ◽

S. Das ◽

T.K. Bhattacharyya

Keyword(s):

Thin Films ◽

Refractive Index ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Silicon Substrate ◽

Base Material ◽

Chemical Vapor ◽

Compatibility Study ◽

Nanocomposite Thin Films ◽

Silicon Based

In this paper, the etching characteristic of diamond like nanocomposite thin films materials in hydrazine has been reported. The experiments have been carried out to explore the compatibility of hydrazine as a propellant with silicon based microthruster. In the reported work, 2″ N-type (100) silicon wafer with 4-6 Ω cm resistivity were used as base material. Diamond-like nanocomposite (DLN) films are deposited on silicon substrate by plasma enhanced chemical vapor deposition (PECVD) process using siloxane or silazane based precursors or their combinations. Thickness of deposited DLN thin films is around 1 µm. DLN samples are treated in 98% hydrazine at 25 °C, 70 °C and 90 °C for different time and etch rates and subsequently the change in refractive index of the DLN films if any has been measured.

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