Effects of Al2O3 Buffer Layer on the Properties of ZnO: Al Thin Films Deposited on Glass by Sputtering

2016 ◽  
Vol 848 ◽  
pp. 301-304
Author(s):  
Xiao Jing Wang
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Optical Property ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Hexagonal Structure ◽  
Buffer Layers ◽  
Glass Substrates ◽  
Average Transmittance ◽  
Conductive Property

The ZnO:Al (AZO) films were deposited on glass substrates with Al2O3 buffer layers by RF magnetron sputtering. The obtained films had the hexagonal structure and preferred orientation of (002). Compared with AZO film without buffer layer, the grain size of the film with buffer layer was increased and the conductive property was increased greatly. the grain size of AZO films reached 27.9nm for those with buffer layers. The optical property of AZO films was decreased by the buffer layers. The resistivity of AZO films with Al2O3 buffer layer was about 6.6×10-3 Ω·cm and the average transmittance was over 80% in the range of 450~900nm.

Enhancement of Electrical Properties of ZnO: Al Thin Films on Transparent TPT Substrates by SiO2 Buffer Layers

2013 ◽  
Vol 774-776 ◽  
pp. 954-959
Author(s):  
Xiao Jing Wang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Carrier Concentration ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Hexagonal Structure ◽  
Buffer Layers ◽  
Zno Thin Films ◽  
Average Transmittance ◽  
Doped Zno

The electrical properties need to be improved, although Aluminum doped ZnO thin films (ZnO: Al) have been successfully deposited on transparent TPT substrates by our group. In this paper, ZnO: Al film was deposited on TPT substrate with SiO2 buffer layer by RF magnetron sputtering. The obtained film had a hexagonal structure and highly (002) preferred orientation. Compared with ZAO film without buffer layer, the lattice constant distortion of the film with buffer layer was decreased and the compressive stress was decreased by 9.2%, reaching to 0.779GPa. The carrier concentration and hall mobility of the film with buffer layer were both increased; especially the carrier concentration was enhanced by two orders of magnitude, reaching to 2.65×10+20/cm3. The resistivity of ZAO film with SiO2 buffer layer was about 7.6×10-3 Ω·cm and the average transmittance was over 70% in the range of 450~900nm.

The Preparation of ZnO: Al Thin Films on Flexible Substrates by Magnetron Sputtering Method

2014 ◽  
Vol 989-994 ◽  
pp. 65-68
Author(s):  
Xiao Jing Wang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Buffer Layer ◽  
Compressive Stress ◽  
Lattice Constant ◽  
Rf Magnetron Sputtering ◽  
Hexagonal Structure ◽  
Preferred Orientation ◽  
Flexible Substrates ◽  
Average Transmittance

ZnO: Al film was deposited on TPT substrate with SiO2 buffer layer by RF magnetron sputtering. The obtained film had a hexagonal structure and highly (002) preferred orientation. The lattice constant distortion of the film with buffer layer was decreased and the compressive stress was 0.779GPa. The carrier concentratio reached to 3.15×10+20/cm3. The resistivity of ZAO film with SiO2 buffer layer was about 9.2×10-3 Ω·cm and the average transmittance was over 72% in the range of 380~900nm.

Effects of the Sputtering Time of AlN Buffer Layer on the Quality of ZnO Thin Films

2014 ◽  
Vol 881-883 ◽  
pp. 1117-1121 ◽  
Author(s):  
Xiang Min Zhao
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Buffer Layers ◽  
Zno Thin Films ◽  
Zno Films ◽  
Si Substrates ◽  
Atomic Force ◽  
Structure Morphology ◽  
Aln Buffer

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

Vanadium Dioxide Thin Films Deposited on TiO2 Buffer Layer for Smart Thermochromic Glazing of Windows

2011 ◽  
Vol 374-377 ◽  
pp. 1365-1368 ◽  
Author(s):  
Jian Wei Ma ◽  
Gang Xu ◽  
Lei Miao
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Buffer Layer ◽  
Quartz Glass ◽  
Vanadium Dioxide ◽  
Near Infrared ◽  
Rf Magnetron Sputtering ◽  
Infrared Region ◽  
Glass Substrates ◽  
Different Color

Vanadium dioxide (VO2) films were prepared on quartz glass and TiO2-coated quartz glass substrates by reactive RF-magnetron sputtering. The VO2 thin film with film thickness of 50 nm deposited on quartz glass substrates showed two kinds of regions with different color visible to the naked eye, i.e., the earth yellow region and the cyan region. Both XRD and Raman spectroscopy showed that the different color regions of the films had the different crystallinity quality and phase composition. Whereas, the VO2 thin films with film thickness of 50 nm fabricated on TiO2-coated quartz glass (with TiO2 film thickness of 50 nm) had uniform color and exhibited a larger change in transmittance at near infrared region than the VO2 thin films deposited on quartz glass did. A TiO2 buffer layer improved the crystallinity and uniformity of the VO2 film. Such very thin VO2 films with a TiO2 buffer layer have high potential for practical application in smart thermal glazing of windows.

Vanadium Dioxide Thin Films Deposited on ZnO Buffer Layer for Smart Thermochromic Glazing of Windows

2013 ◽  
Vol 361-363 ◽  
pp. 370-373 ◽  
Author(s):  
Jian Wei Ma ◽  
Ya Rui Song ◽  
Gang Xu ◽  
Lei Miao
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Smart Windows ◽  
Sputtering Deposition ◽  
Glass Substrates ◽  
Vanadium Oxide Thin Films ◽  
Zno Buffer Layer

Vanadium oxide thin films have been deposited on glass and ZnO-coated glass substrates by reactive RF-magnetron sputtering deposition at different substrate temperature. The introduction of ZnO buffer layer could increase the transmittance. The buffer layer ZnO could lead to the increase of the crystallinity quality of VO2 films and substrate temperature could be decreased to 100°C for the obtaining of polycrystalline VO2 structure. The structure of VO2/ZnO/glass is considered to be potentially applicable to smart windows of high total energy efficiency in architectures or automobiles.

VO2 Thin Films Deposited on ZnO Buffer Layer

2013 ◽  
Vol 734-737 ◽  
pp. 2568-2571
Author(s):  
Jian Wei Ma ◽  
Ya Rui Song ◽  
Gang Xu ◽  
Lei Miao
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Smart Windows ◽  
Sputtering Deposition ◽  
Glass Substrates ◽  
Vanadium Oxide Thin Films ◽  
Zno Buffer Layer

Vanadium oxide thin films have been deposited on glass and ZnO-coated glass substrates by reactive RF-magnetron sputtering deposition at different substrate temperature. The introduction of ZnO buffer layer could increase the transmittance. The buffer layer ZnO could lead to the increase of the crystallinity quality of VO2 films and substrate temperature could be decreased to 100°C for the obtaining of polycrystalline VO2 structure. The structure of VO2/ZnO/glass is considered to be potentially applicable to ‘‘smart windows’’ of high total energy efficiency in architectures or automobiles. .

Microstructural, Optical and Electrical Properties of ZnO:Sn Thin Films Deposited by Sol-Gel Method

2013 ◽  
Vol 652-654 ◽  
pp. 519-522
Author(s):  
Jun Chen ◽  
Yue Hui Hu ◽  
Hong Hao Hu ◽  
Yi Chuan Chen
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Sol Gel ◽  
Hexagonal Structure ◽  
Optical And Electrical Properties ◽  
Axis Orientation ◽  
Gel Method ◽  
Sol Gel Method ◽  
Sn Doping ◽  
Glass Substrates

Transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto silica glass substrates by the sol–gel method. The effect of different Sn doping on the crystallinity, structural, optical and electrical properties of ZnO:Sn thin films were investigated by XRD, SEM, UV-VIS spectrophotometer and four-point probe method respectively. Among all of ZnO:Sn thin films in this paper, Sn-doped with 2 at.% exhibited the best properties, the surface demonstrate an accumulative crystallization and hexagonal structure, with a high-preferential c-axis orientation, namely an average transmittance of 90% and the resistivity of 19.6 Ω·cm.

Dependence of Film Thickness on Properties of Al Doped ZnO Thin Films

2011 ◽  
Vol 194-196 ◽  
pp. 2305-2311
Author(s):  
Ying Ge Yang ◽  
Dong Mei Zeng ◽  
Hai Zhou ◽  
Wen Ran Feng ◽  
Shan Lu ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Electrical Parameter ◽  
Substrate Surface ◽  
Rf Magnetron Sputtering ◽  
Thickness Effect ◽  
Visible Range ◽  
Glass Substrates ◽  
Doped Zno

In this study high quality of Al doped ZnO (ZAO) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature in order to study the thickness effect upon their structure, electrical and optical properties. XRD results show that the films are polycrystalline and with strongly preferred (002) orientation perpendicular to substrate surface whatever the thickness is. The crystallite size was calculated by Williamson-Hall method, while it increases as the film thickness increased. The lattice stress is mainly caused by the growth process. Hall measurements revealed electrical parameter very dependent upon thickness when the thickness of ZAO film is lower than 700 nm. The resistivity decreased and the carrier concentration and Hall mobility increases as the film thickness increased. When film thickness becomes larger, only a little change in the above properties was observed. All the films have high transmittance above 90% in visible range. Red shift of the absorption edge was observed as thickness increased. The optical energy bandgap decreased from 3.41eV to 3.30 eV with the increase of film thickness.

scholarly journals Structural and Optical Properties of Cobalt-Doped Zinc Oxide Thin Films Prepared By Spray Pyrolysis Technique

2010 ◽  
Vol 7 (1) ◽  
pp. 69-75
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Spray Pyrolysis ◽  
Spray Pyrolysis Technique ◽  
Texture Coefficient ◽  
Hexagonal Structure ◽  
Structural And Optical Properties ◽  
Lattice Constants ◽  
Glass Substrates

Undoped and Co-doped zinc oxide (CZO) thin films have been prepared by spray pyrolysis technique using solution of zinc acetate and cobalt chloride. The effect of Co dopants on structural and optical properties has been investigated. The films were found to exhibit maximum transmittance (~90%) and low absorbance. The structural properties of the deposited films were examined by x-ray diffraction (XRD). These films, deposited on glass substrates at (400? C), have a polycrystalline texture with a wurtzite hexagonal structure, and the grain size was decreased with increasing Co concentration, and no change was observed in lattice constants while the optical band gap decreased from (3.18-3.02) eV for direct allowed transition. Other parameters such as Texture Coefficient (Tc), dislocation density (?) and number of crystals (M) were also calculated .

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