Properties of Low-Dimentional Polysilicon in SOI Structures for Low Temperature Sensors

2013 ◽  
Vol 854 ◽  
pp. 49-55 ◽  
Author(s):  
Anatoly Druzhinin ◽  
Yu. Khoverko ◽  
Igor Kogut ◽  
R. Koretskii
Keyword(s):  
Low Temperature ◽  
Magnetic Fields ◽  
Low Temperatures ◽  
Boron Concentration ◽  
Temperature Sensors ◽  
Temperature Range ◽  
Hopping Conductance

The low temperature studies of SOI-structures have been carried out in a temperature range of 4.2÷300K at magnetic fields up to 14T. The samples with initial boron concentration of about 2.41018сm-3 have been investigated. The results of the studies of SOI-structure conductance at low temperatures in the range of hopping conductance and a possibility to use this material in sensors are analyzed.

scholarly journals On the electrical resistivity of electrolytic bismuth at low temperature, and in magnetic fields

1897 ◽  
Vol 60 (359-367) ◽  
pp. 425-432 ◽  
Keyword(s):  
Electrical Resistivity ◽  
Low Temperature ◽  
Magnetic Fields ◽  
Electrical Resistance ◽  
Low Temperatures ◽  
Royal Society ◽  
Pole Piece ◽  
Interpolar Distance ◽  
Pure Bismuth ◽  
Transverse Magnetisation

In a previous communication to the Royal Society we have pointed out the behaviour of electrolytically prepared bismuth when cooled to very low temperatures, and at the same time subjected to transverse magnetisation. During the last summer we have extended these observations, and completed them, as far as possible, by making measurements of the electrical resistance of a wire of pure bismuth, placed transversely to the direction of the field of an electromagnet, and at the same time subjected to the low temperature obtained by the use of liquid air. Sir David Salomons was so kind as to lend us for some time his large electromagnet, which, in addition to giving a powerful field, is provided with the means of easily altering the interpolar distance of the pole pieces, and also for changing from one form of pole piece to another.

PERSISTENT PHOTOCONDUCTIVITY IN La0.7CaxBa1-xMnO3 THIN FILMS

1999 ◽  
Vol 13 (29n31) ◽  
pp. 3786-3791 ◽  
Author(s):  
R. CAURO ◽  
J. C. GRENET ◽  
A. GILABERT ◽  
M. G. MEDICI
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Visible Light ◽  
Low Temperatures ◽  
Transport Mechanism ◽  
Persistent Photoconductivity ◽  
Temperature Range ◽  
Insulator Metal Transition ◽  
First Time

We report, for the first time, experiments of persistent photoconductivity (PPC) in thin films of manganese perovskites La 0.7 Ca 0.25 Ba 0.05 MnO 3 and La 0.7 Ca 0.2 Ba 0.1 MnO 3 showing a persistent decrease of a few percent of the resistance after illumination with visible light. These persistent photoinduced effects are seen only in a range of low temperatures (<25 K) well below the insulator-metal transition at respectively T c=173 K and T c=120 K. In this low temperature range, the transport mechanism is rather of activated hopping type regime.

The Low Temperature Phases of 3He

1982 ◽  
Vol 19 ◽  
Author(s):  
Robert C. Richardson
Keyword(s):  
Low Temperature ◽  
Magnetic Fields ◽  
Phase Diagrams ◽  
Temperature Range ◽  
Two Systems

ABSTRACTIn the temperature range between 1 mK and 3 mK and in magnetic fields between 0 T and 1 T, there are four distinct phases of liquid 3He and three distinct phases of solid 3He. The liquid becomes a triplet superfluid and the solid becomes a nuclear antiferromagnet. Despite the great differences which exist between a superfluid and an antiferromagnet, there are remarkable similarities between phase diagrams of the two systems.

HIGH-FIELD TRANSPORT PROPERTIES OF T'-Ln2-xCexCuO4 (Ln=Nd, Pr, La)

2002 ◽  
Vol 16 (20n22) ◽  
pp. 3216-3219 ◽  
Author(s):  
T. SEKITANI ◽  
N. MIURA ◽  
M. NAITO
Keyword(s):  
Magnetic Field ◽  
Low Temperature ◽  
Magnetic Fields ◽  
Transport Properties ◽  
Normal State ◽  
Low Temperatures ◽  
High Field ◽  
Magnetic Moments ◽  
Negative Magnetoresistance ◽  
High Magnetic Fields

We report low-temperature magnetotransport in the normal state of the electron-doped superconductors, Nd 2-x Ce x CuO 4, Pr 2-x Ce x CuO 4, and La 2-x Ce x CuO 4, by suppressing the superconductivity with high magnetic fields. The normal state ρ-T curve shows an up-turn at low temperatures, which has a log T dependence with saturation at lowest temperatures. The up-turn is gradually suppressed with increasing magnetic field, resulting in negative magnetoresistance. We discuss these findings on the basis of the Kondo scattering originating from the magnetic moments of Cu 2+ ions.

The ferromagnetic domain structure of haematite

1968 ◽  
Vol 303 (1475) ◽  
pp. 525-529 ◽  
Keyword(s):  
Low Temperature ◽  
Single Crystals ◽  
Domain Structure ◽  
Low Temperatures ◽  
Remanent Magnetization ◽  
Temperature Transition ◽  
Small Temperature ◽  
Temperature Range ◽  
Ferromagnetic Domain ◽  
Synthetic Crystals

Observations are reported of the ferromagnetic domain structure of natural and synthetic single crystals, made at temperatures close to the low temperature transition with the aid of an acetone based magnetic colloid. The domain structure of the synthetic crystals was found to change radically over a small temperature range centred around –12 °C. These changes are correlated with the measured remanent magnetization. Fairly extensive colloid patterns were found on the natural crystals at low temperatures but when the natural crystals were annealed at 1200 °C this low temperature colloid structure was no longer found.

Thermogravimetric study of sequential carbonation and decarbonation processes over Na2ZrO3 at low temperatures (30–80 °C): relative humidity effect

RSC Advances ◽  
2016 ◽  
Vol 6 (71) ◽  
pp. 66579-66588 ◽  
Author(s):  
J. Arturo Mendoza-Nieto ◽  
Heriberto Pfeiffer
Keyword(s):  
Solid State ◽  
Relative Humidity ◽  
Low Temperature ◽  
Low Temperatures ◽  
Humidity Effect ◽  
Temperature Range ◽  
Thermogravimetric Study ◽  
Relative Humidity Effect

Na2ZrO3 was synthetized via solid-state and tested in a low temperature range (30–80 °C) for carbonation and decarbonation processes using RH values between 0 and 80%. Results confirm that it is possible to accomplish successively at least 8 cycles.

LOW TEMPERATURE CHARACTERISTIC OF GaAlAs TEMPERATURE SENSOR DIODE

2001 ◽  
Vol 15 (09n10) ◽  
pp. 319-322 ◽  
Author(s):  
SNEHADRI BIHARI OTA ◽  
JUAN BASCUÑÁN ◽  
SMITA OTA
Keyword(s):  
Low Temperature ◽  
Temperature Measurement ◽  
Temperature Sensor ◽  
Low Temperatures ◽  
Temperature Characteristic ◽  
Lake Shore ◽  
Temperature Range

We have measured the forward characteristics of a GaAlAs temperature sensor diode (Lake Shore) in the temperature range 10–70 K and for fixed current values between 10 nA to 500 μA. On the basis of certain extrapolations, we suggest that these diodes can be used for temperature measurement at at ultra low temperatures.

Notizen: Low Temperature Magnetic Susceptibility of Sm2(WO4)3

1975 ◽  
Vol 30 (12) ◽  
pp. 1783-1784 ◽  
Author(s):  
H.B. Lal ◽  
Naseeb Dar
Keyword(s):  
Magnetic Susceptibility ◽  
Low Temperature ◽  
Crystal Field ◽  
Low Temperatures ◽  
Magnetic Ordering ◽  
Magnetic Exchange ◽  
Temperature Range ◽  
Powder Samples

Abstract The magnetic susceptibility of powder samples of Sm2(WO4)3 has been measured in the temperature range 4.2 to 300 K. At low temperatures the measured values disagree with those calculated for Sm3+-ions using Van Vleck's theory. The high values below 100 K are assigned to magnetic exchange and dipol interactions. There might be magnetic ordering below 4.2 K. The effects of the crystal field and impurities have been shown to be unimportant.

Thermally Stimulated Conductivity in a-Si:H at low Temperatures

1994 ◽  
Vol 336 ◽  
Author(s):  
M. Zhu ◽  
M.B. Von Der Linden ◽  
W.F. Van Der Weg
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Low Temperatures ◽  
Thermal Emission ◽  
Temperature Peak ◽  
Band Tail ◽  
Emission Energy ◽  
Temperature Range ◽  
Multiple Trapping ◽  
Peak Value

ABSTRACTThe low temperature thermally stimulated conductivity (TSC) in a-Si:H film has been investigated in the temperature range from 20 to 150 K. Unlike the results of the high temperature TSC, the low temperature peak value and position (Tm) of TSC do not depend on the starting temperature T0 at low temperatures. This new phenomenon can not be explained by TSC theory [1]. Based on the multiple trapping (MT) Model, TSC theory limits its application to the intermediate and high temperature range. In this paper, a model of the hopping conduction with the transport energy Et in the band tail is proposed to understand the behavior of the low temperature TSC in which the thermal emission energy Em does not depend on the starting temperature of TSC.

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