Process Study of Atomic Layer Deposition Al2O3 in Industry Application for Solar Cells

2013 ◽  
Vol 873 ◽  
pp. 540-545
Author(s):  
Hong Bo Qiu ◽  
Hui Qi Li ◽  
Bang Wu Liu ◽  
Yang Xia
Keyword(s):  
Atomic Layer Deposition ◽  
Rear Surface ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Open Circuit ◽  
Line Contact ◽  
Effective Lifetime ◽  
Layer Deposition ◽  
Opening Line ◽  
The Impact

The rear surface of multi-silicon has been passivated by Atomic Layer Deposition (ALD) Al2O3and Plasma Enhanced Chemical Vapor Deposition (PECVD) SiNx. The results of the effective lifetime of the silicon before and after firing show that the thickness of Al2O3thin films has a significant effect on the passivation quality. The effective lifetime of the silicon can reach up to 40.64μs and show a better passvation quality when the thickness of Al2O3film is 18nm. Moreover, the impact of spacing of the laser opening-line contact on open-circuit voltage and fill-factor has been furthermore investigated. The cells have a better performance when the spacing of the opening-line is 1.2mm. The result of the local topography of the opening-line contact tested by Scanning Electron Microscopy (SEM) shows that the existing of the void in the interface between Al and Si is the main reason for the bad performance of the cells.

Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents

2015 ◽  
Vol 51 (86) ◽  
pp. 15692-15695 ◽  
Author(s):  
A. Delabie ◽  
M. Caymax ◽  
B. Groven ◽  
M. Heyne ◽  
K. Haesevoets ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Reducing Agents ◽  
Layer Deposition ◽  
Temperature Deposition ◽  
The Impact

We demonstrate the impact of reducing agents for Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD) of WS2 from WF6 and H2S precursors.

scholarly journals Influence of the Geometric Parameters on the Deposition Mode in Spatial Atomic Layer Deposition: A Novel Approach to Area-Selective Deposition

Coatings ◽  
2018 ◽  
Vol 9 (1) ◽  
pp. 5 ◽  
Author(s):  
César Masse de la Huerta ◽  
Viet Nguyen ◽  
Jean-Marc Dedulle ◽  
Daniel Bellet ◽  
Carmen Jiménez ◽  
...  
Keyword(s):  
Fluid Dynamics ◽  
Atomic Layer Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Dynamics Simulation ◽  
Selective Deposition ◽  
Temporal Separation ◽  
Present Contribution ◽  
Chemical Vapor Deposition Growth ◽  
Layer Deposition

Within the materials deposition techniques, Spatial Atomic Layer Deposition (SALD) is gaining momentum since it is a high throughput and low-cost alternative to conventional atomic layer deposition (ALD). SALD relies on a physical separation (rather than temporal separation, as is the case in conventional ALD) of gas-diluted reactants over the surface of the substrate by a region containing an inert gas. Thus, fluid dynamics play a role in SALD since precursor intermixing must be avoided in order to have surface-limited reactions leading to ALD growth, as opposed to chemical vapor deposition growth (CVD). Fluid dynamics in SALD mainly depends on the geometry of the reactor and its components. To quantify and understand the parameters that may influence the deposition of films in SALD, the present contribution describes a Computational Fluid Dynamics simulation that was coupled, using Comsol Multiphysics®, with concentration diffusion and temperature-based surface chemical reactions to evaluate how different parameters influence precursor spatial separation. In particular, we have used the simulation of a close-proximity SALD reactor based on an injector manifold head. We show the effect of certain parameters in our system on the efficiency of the gas separation. Our results show that the injector head-substrate distance (also called deposition gap) needs to be carefully adjusted to prevent precursor intermixing and thus CVD growth. We also demonstrate that hindered flow due to a non-efficient evacuation of the flows through the head leads to precursor intermixing. Finally, we show that precursor intermixing can be used to perform area-selective deposition.

scholarly journals Applications of atomic layer deposition and chemical vapor deposition for perovskite solar cells

2020 ◽  
Vol 13 (7) ◽  
pp. 1997-2023 ◽  
Author(s):  
James A. Raiford ◽  
Solomon T. Oyakhire ◽  
Stacey F. Bent
Keyword(s):  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Atomic Layer Deposition ◽  
Vapor Deposition ◽  
Perovskite Solar Cells ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Layer Deposition

A review on the versatility of atomic layer deposition and chemical vapor deposition for the fabrication of stable and efficient perovskite solar cells.

scholarly journals TiO 2 thin film patterns prepared by chemical vapor deposition and atomic layer deposition using an atmospheric pressure microplasma printer

2019 ◽  
Vol 16 (12) ◽  
pp. 1900127 ◽  
Author(s):  
Morteza Aghaee ◽  
Joerie Verheyen ◽  
Alquin A. E. Stevens ◽  
Wilhelmus M. M. Kessels ◽  
Mariadriana Creatore
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Atomic Layer Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Layer Deposition

Improvement of the photocatalytic degradation property of atomic layer deposited ZnO thin films: the interplay between film properties and functional performances

2015 ◽  
Vol 3 (21) ◽  
pp. 11453-11461 ◽  
Author(s):  
V. Rogé ◽  
N. Bahlawane ◽  
G. Lamblin ◽  
I. Fechete ◽  
F. Garin ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Photocatalytic Degradation ◽  
Atomic Layer ◽  
Photocatalytic Properties ◽  
Zno Thin Films ◽  
Film Properties ◽  
Layer Deposition ◽  
The Impact

In this work, we have evidenced the impact of stoichiometry on the photocatalytic properties of ZnO nanofilms grown by atomic layer deposition (ALD).

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