RF MEMS for Reconfigurable RF Front-End: Research in Australia

2014 ◽  
Vol 901 ◽  
pp. 105-110 ◽  
Author(s):  
Liang Gong ◽  
King Yuk Chan ◽  
Yi Yang ◽  
Rodica Ramer
Keyword(s):  
Rf Mems ◽  
Mems Switches ◽  
The Past ◽  
Front End ◽  
Rf Front End ◽  
Rf Mems Switches ◽  
Mems Technology ◽  
Front End Circuits ◽  
Rf Performance ◽  
Reconfigurable Filters

This paper reviews some ground breaking development of RF MEMS technology in Australia at the UNSW, over the past decade. It presents some unique and novel designs using RF MEMS switches to achieve reconfigurable RF front-end circuits. These designs include multiport RF MEMS switches, switch matrices, reconfigurable filters and antennas. The resulting devices achieved RF performance that is unmatched by any existing RF andmicrowave technologies.

scholarly journals RF-MEMS switches with AlN dielectric and their applications

2011 ◽  
Vol 3 (5) ◽  
pp. 509-520 ◽  
Author(s):  
Montserrat Fernández-Bolaños Badía ◽  
Pierre Nicole ◽  
Adrian Mihai Ionescu
Keyword(s):  
Transmission Lines ◽  
Rf Mems ◽  
Beam Steering ◽  
Phase Shifters ◽  
Center Frequency ◽  
Mems Switches ◽  
Rf Mems Switches ◽  
Mems Technology ◽  
Bandwidth Tuning ◽  
Rf Performance

This paper reports on the potential of RF-MEMS technology based on aluminum nitride capacitive dielectric and nickel-suspended membranes to provide RF circuit functions in reconfigurable front-end radios. The RF performance of capacitive switches, distributed MEMS transmission lines (DMTLs) phase shifters for beam steering and tunable filters, including center frequency and bandwidth tuning of bandpass and band-stop filters are presented. Detailed characterization based on S-parameter data demonstrates very promising figures of merit of all fabricated demonstrators from 5 to 40 GHz.

Scope of RF MEMS Technology for Microwave Circuits and Systems

2021 ◽  
pp. 1-22
Author(s):  
Kanthamani Sundharajan
Keyword(s):  
Rf Mems ◽  
Low Cost ◽  
Microwave Circuits ◽  
Micro Electro Mechanical Systems ◽  
Mems Switches ◽  
Phased Array Antennas ◽  
Array Antennas ◽  
Rf Mems Switches ◽  
Mems Technology ◽  
Key Issues

Micro-electro mechanical systems (MEMS) technology has facilitated the need for innovative approaches in the design and development of miniaturized, effective, low-cost radio frequency (RF) microwave circuits and systems. This technology is expected to have significant role in today's 5G applications for the development of reconfigurable architectures. This chapter presents an overview of the evolution of MEMS-based subsystems and devices, especially switches and phased array antennas. This chapter also discusses the key issues in design and analysis of RF MEMS-based devices, particularly with primary emphasis on RF MEMS switches and antennas.

scholarly journals Analysis of RF Front-End Performance of Reconfigurable Antennas with RF Switches in the Far Field

2014 ◽  
Vol 2014 ◽  
pp. 1-14 ◽  
Author(s):  
Insu Yeom ◽  
Junghan Choi ◽  
Sung-su Kwoun ◽  
Byungje Lee ◽  
Changwon Jung
Keyword(s):  
Mobile Devices ◽  
Field Condition ◽  
Rf Mems ◽  
Reconfigurable Antennas ◽  
Reconfigurable Antenna ◽  
Far Field ◽  
Rf Switches ◽  
Mems Switches ◽  
Front End ◽  
Rf Front End

The RF front-end performances in the far-field condition of reconfigurable antennas employing two commonly used RF switching devices (PIN diodes and RF-MEMS switches) were compared. Two types of antennas (monopole and slot) representing general direct/coupled feed types were used for the reconfigurable antennas to compare the excited RF power to the RF switches by the reconfigurable antenna types. For the switching operation of the antennas, a biasing circuit was designed and embedded in the same antenna board, which included a battery to emphasize the antenna’s adaptability to mobile devices. The measurement results of each reconfigurable antenna (radiation patterns and return losses) are presented in this study. The receiving power of the reference antenna was measured by varying the transmitting power of the reconfigurable antennas in the far-field condition. The receiving power was analyzed using the “Friis transmission equation” and compared for two switching elements. Based on the results of these measurements and comparisons, we discuss what constitutes an appropriate switch device and antenna type for reconfigurable antennas of mobile devices in the far-field condition.

Influence of design and fabrication on RF performance of capacitive RF MEMS switches

2016 ◽  
Vol 22 (7) ◽  
pp. 1741-1746 ◽  
Author(s):  
Anna Persano ◽  
Fabio Quaranta ◽  
Giovanni Capoccia ◽  
Emanuela Proietti ◽  
Andrea Lucibello ◽  
...  
Keyword(s):  
Rf Mems ◽  
Mems Switches ◽  
Rf Mems Switches ◽  
Rf Performance

scholarly journals Thermal analysis of RF-MEMS switches for power handling front-end

2005 ◽  
Author(s):  
F. Coccetti ◽  
B. Ducarouge ◽  
E. Scheid ◽  
D. Dubuc ◽  
K. Grenier ◽  
...  
Keyword(s):  
Thermal Analysis ◽  
Rf Mems ◽  
Mems Switches ◽  
Front End ◽  
Power Handling ◽  
Rf Mems Switches

Effect of wafer-level silicon cap packaging on BiCMOS embedded RF-MEMS switch performance

2017 ◽  
Vol 2017 (NOR) ◽  
pp. 1-4
Author(s):  
Selin Tolunay Wipf ◽  
Alexander Göritz ◽  
Matthias Wietstruck ◽  
Maurizio Cirillo ◽  
Christian Wipf ◽  
...  
Keyword(s):  
Rf Mems ◽  
Wafer Level ◽  
3D Fem ◽  
Rf Mems Switch ◽  
Mems Switches ◽  
Mems Switch ◽  
Rf Mems Switches ◽  
Bicmos Technology ◽  
Switch Performance ◽  
Rf Performance

Abstract In this paper, the effect of silicon (Si) cap packaging on the BiCMOS embedded RF-MEMS switch performance is studied. The RF-MEMS switches are designed and fabricated in a 0.25μm SiGe BiCMOS technology for K-band (18 – 27 GHz) applications. The packaging is done based on a wafer-to-wafer bonding technique and the RF-MEMS switches are electrically characterized before and after the Si cap packaging. The experimental data shows the effect of the wafer-level Si cap package on the C-V and S-parameter measurements. The performed 3D FEM simulations prove that the low resistive Si cap, specifically 1 Ω·cm, results in a significant RF performance degradation of the RF-MEMS switch in terms of insertion loss.

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