The Research of Trap Level Distribution of PI/AlN (Treated)-MMT Films with Different Contents Based on Decay Charge Theory

Through the theoretical deviation based on charge decay theory a trap level distribution function relative to the isothermal discharge current is given in this paper. Based on that, the effect of AlN(treated)-MMT nanoparticles with different contents of 1wt%, 3wt%, 5wt% on surface trap level distribution is researched. The experimental results show that the trap level density is significantly increased compared with traditional IDC and TSC methods. Trap level density and the number of trap charges increase due to the doping AlN (treated)-MMT nanoparticles, and increase with doping contents. The maximum trap energy level density of AlN(treated)-MMT film with 5wt% is 9.14×1024/(eV·m3), which is 3.3 times compared with the PI film corresponding to the trap level in the range of 1.0~1.1eV. The trap level density is affected by the interface trap effect caused by the AlN(treated)-MMT nanoparticles and different contents.

Download Full-text

Using capacitance methods for interface trap level density extraction in graphene field-effect devices

2012 28th International Conference on Microelectronics Proceedings ◽

10.1109/miel.2012.6222868 ◽

2012 ◽

Cited By ~ 8

Author(s):

Gennady I. Zebrev ◽

Evgeny V. Melnik ◽

Daria K. Batmanova

Keyword(s):

Field Effect ◽

Level Density ◽

Interface Trap ◽

Trap Level ◽

Field Effect Devices

Download Full-text

Determination of SiO2–Si interface trap level density (Dit) by vibrating capacitor method

Solid-State Electronics ◽

10.1016/s0038-1101(00)00119-2 ◽

2000 ◽

Vol 44 (10) ◽

pp. 1825-1831 ◽

Cited By ~ 9

Author(s):

János Mizsei

Keyword(s):

Level Density ◽

Interface Trap ◽

Trap Level

Download Full-text

Rapid Thermal Oxidation of GeSi Strained Layers

MRS Proceedings ◽

10.1557/proc-198-521 ◽

1990 ◽

Vol 198 ◽

Author(s):

D. K. Nayak ◽

K. Kamjoo ◽

J. S. Park ◽

J. C. S. Woo ◽

K. L. Wang

Keyword(s):

Oxidation Rate ◽

Level Density ◽

Interface Trap ◽

Trap Level ◽

Cold Wall ◽

Strained Layers ◽

Oxide Charge ◽

Si Substrates ◽

Capacitance Voltage ◽

Gesi Layer

ABSTRACTA cold-wall rapid thermal processor is used for the oxidation of commensurately grown GexSi1−x layers on Si substrates. It is shown for dry oxidation that the oxidation rate of GeSi is the same as that of Si. The dry oxidationrate of GeSi is independent of Ge concentration (up to 20 % considered in this study) in the GeSi layer. For wet oxidation, however, the rate of oxidation of the GexSi1−x layer is found to be significantly higher than that of pure Si, and the oxidation rate increases with the Ge concentration in GexSi1−x layer. Employing highfrequency and quasistatic Capacitance-Voltage measurements, it is found for a thin oxide that a fixed negative oxide charge density in the range of 1011 – 1012/cm2, and the interface trap level density (in the mid-gap region) of about 1012 /cm2.eV are present. Further, the density of this fixed oxide charge at the SiO2 /GeSi interface is found.to increase with the Ge concentration in the commensurately grown GeSi layers.

Download Full-text

"Universality" of Gaussian orthogonal ensemble fluctuations: the two-body random ensemble and shell model spectra

Canadian Journal of Physics ◽

10.1139/p90-048 ◽

1990 ◽

Vol 68 (3) ◽

pp. 301-312 ◽

Cited By ~ 9

Author(s):

Gaetan J. H. Laberge ◽

Rizwan U. Haq

Keyword(s):

Energy Level ◽

Shell Model ◽

Detailed Analysis ◽

Close Agreement ◽

Level Density ◽

Nuclear Interactions ◽

Gaussian Orthogonal Ensemble ◽

Random Hamiltonians

Starting from an appropriate decomposition of the level density into an average and fluctuating part, we studied the energy level fluctuations of an ensemble defined by two-body random Hamiltonians. A detailed analysis of several spectrally averaged fluctuation measures shows close agreement with the predictions of the Gaussian orthogonal ensemble (GOE). This confirms earlier indications that, except for noninteracting particles, fluctuation measures are insensitive to the rank of the interaction. Further, analysis of spectra obtained from realistic nuclear interactions agrees well with the GOE indicating that specific properties of the Hamiltonian have little or no influence on fluctuations. These results, therefore, strengthen our belief in the "universality" of GOE fluctuations.

Download Full-text

A Statistical Adaptable Distribution Function Model for Low Probabilities of Failure

10th Biennial Conference on Reliability, Stress Analysis, and Failure Prevention ◽

10.1115/detc1993-0063 ◽

1993 ◽

Author(s):

Suryaji R. Bhonsle ◽

Paul Thompson

Keyword(s):

Experimental Data ◽

Distribution Function ◽

Experimental Results ◽

Function Model ◽

Log Normal ◽

Function Models

Abstract Weibull, log normal, and some other Distribution function models (D.F.M.) have a tendency to deviate from experimental results. This deviation, either exceedingly conservative or nonconservative, is amplified at low probabilities of failure. To remedy such problems a new D.F.M. is derived. It is then used to predict low probabilities of failure. The predictions are consistent with experimental data and are not too conservative or too nonconservative.

Download Full-text

Energy level density of nuclei

Nuclear Physics A ◽

10.1016/0375-9474(92)90233-a ◽

1992 ◽

Vol 539 (1) ◽

pp. 17-36 ◽

Cited By ~ 78

Author(s):

Shalom Shlomo

Keyword(s):

Energy Level ◽

Level Density

Download Full-text

A New Opacity-Sampling Model Atmosphere Program for Arbitrary Abundances

International Astronomical Union Colloquium ◽

10.1017/s0252921100020327 ◽

1993 ◽

Vol 138 ◽

pp. 87-97 ◽

Cited By ~ 18

Author(s):

Robert L. Kurucz

Keyword(s):

Distribution Function ◽

Energy Level ◽

Lower Energy ◽

Van Der Waals ◽

Model Atmosphere ◽

Function Model ◽

Elemental Abundances ◽

Lower Energy Level ◽

Molecular Lines ◽

Ap Stars

AbstractI have developed a new version of my model atmosphere program called ATLAS12. It recognizes more than 1000 species, each in up to 10 isotopic forms, including all ions of the elements up through Zn and the first 5 ions of heavier elements up through Es. The elemental abundances are treated as variable with depth. ATLAS12 has 6 input files of line data containing 58,000,000 atomic and molecular lines. For each line the wavelength, identification, lower energy level, gf, radiative, Stark, and van der Waals damping constants are packed into 16 bytes. At each wavelength point in a frequency integration the profiles of all the significant nearby lines are computed and summed. The program and line files will be distributed in the fall of 1992.There are no significant differences at A0 between an opacity-sampled model computed with ATLAS12 and opacity-distribution-function model computed with ATLAS9. ATLAS12 allows arbitrary abundances but is slower. The new program can be used to produce improved models for Am and Ap stars that include the effects of millions of lines.

Download Full-text