Determination of SiO2–Si interface trap level density (Dit) by vibrating capacitor method

2000 ◽  
Vol 44 (10) ◽  
pp. 1825-1831 ◽  
Author(s):  
János Mizsei
Keyword(s):  
Level Density ◽  
Interface Trap ◽  
Trap Level

Rapid Thermal Oxidation of GeSi Strained Layers

1990 ◽  
Vol 198 ◽  
Author(s):  
D. K. Nayak ◽  
K. Kamjoo ◽  
J. S. Park ◽  
J. C. S. Woo ◽  
K. L. Wang
Keyword(s):  
Oxidation Rate ◽  
Level Density ◽  
Interface Trap ◽  
Trap Level ◽  
Cold Wall ◽  
Strained Layers ◽  
Oxide Charge ◽  
Si Substrates ◽  
Capacitance Voltage ◽  
Gesi Layer

ABSTRACTA cold-wall rapid thermal processor is used for the oxidation of commensurately grown GexSi1−x layers on Si substrates. It is shown for dry oxidation that the oxidation rate of GeSi is the same as that of Si. The dry oxidationrate of GeSi is independent of Ge concentration (up to 20 % considered in this study) in the GeSi layer. For wet oxidation, however, the rate of oxidation of the GexSi1−x layer is found to be significantly higher than that of pure Si, and the oxidation rate increases with the Ge concentration in GexSi1−x layer. Employing highfrequency and quasistatic Capacitance-Voltage measurements, it is found for a thin oxide that a fixed negative oxide charge density in the range of 1011 – 1012/cm2, and the interface trap level density (in the mid-gap region) of about 1012 /cm2.eV are present. Further, the density of this fixed oxide charge at the SiO2 /GeSi interface is found.to increase with the Ge concentration in the commensurately grown GeSi layers.

The Research of Trap Level Distribution of PI/AlN (Treated)-MMT Films with Different Contents Based on Decay Charge Theory

2014 ◽  
Vol 981 ◽  
pp. 855-858
Author(s):  
Yuan Yuan Liu ◽  
Jing Hua Yin ◽  
Yao Lei
Keyword(s):  
Distribution Function ◽  
Energy Level ◽  
Discharge Current ◽  
Level Density ◽  
Experimental Results ◽  
Interface Trap ◽  
Trap Level ◽  
Surface Trap ◽  
Trap Energy ◽  
Charge Decay

Through the theoretical deviation based on charge decay theory a trap level distribution function relative to the isothermal discharge current is given in this paper. Based on that, the effect of AlN(treated)-MMT nanoparticles with different contents of 1wt%, 3wt%, 5wt% on surface trap level distribution is researched. The experimental results show that the trap level density is significantly increased compared with traditional IDC and TSC methods. Trap level density and the number of trap charges increase due to the doping AlN (treated)-MMT nanoparticles, and increase with doping contents. The maximum trap energy level density of AlN(treated)-MMT film with 5wt% is 9.14×1024/(eV·m3), which is 3.3 times compared with the PI film corresponding to the trap level in the range of 1.0~1.1eV. The trap level density is affected by the interface trap effect caused by the AlN(treated)-MMT nanoparticles and different contents.

Analysis of the Electron Traps at the 4H-SiC/SiO2 Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen Pre-Implanted Layer

2009 ◽  
Vol 615-617 ◽  
pp. 533-536
Author(s):  
Ioana Pintilie ◽  
Francesco Moscatelli ◽  
Roberta Nipoti ◽  
Antonella Poggi ◽  
Sandro Solmi ◽  
...  
Keyword(s):  
Low Frequency ◽  
Gate Oxide ◽  
High Accuracy ◽  
Interface Trap Density ◽  
Interface Trap ◽  
High Concentration ◽  
Mos Capacitors ◽  
Order Of Magnitude ◽  
Good Agreement

This work is focusing on the effect of a high concentration of nitrogen (N) introduced by ion implantation at the SiO2/4H-SiC interface in MOS capacitors. The N implanted sample (Ninterface ~1x1019cm-3) is compared with a non-implanted one (Ninterface ~1x1016cm-3) by means of the electron interface trap density (Dit). The Dit is determined via High-Low frequency C-V method and Thermal Dielectric Relaxation Current (TDRC) technique. It is shown that the TDRC method, mainly used so far for determination of near interface oxide charges, can be exploited to gain information about the Dit too. The determined value of Dit in the N-implanted sample is nearly one order of magnitude lower than that in the sample without N implantation. Good agreement between the TDRC results and those obtained from High-Low frequency C-V measurements is obtained. Furthermore, the TDRC method shows a high accuracy and resolution of Dit evaluation in the region close to the majority carrier band edge and gives information about the traps located into the oxide.

Determination of the29Si level density from 3 to 22 MeV

1997 ◽  
Vol 55 (1) ◽  
pp. 133-143 ◽  
Author(s):  
F. B. Bateman ◽  
S. M. Grimes ◽  
N. Boukharouba ◽  
V. Mishra ◽  
C. E. Brient ◽  
...  
Keyword(s):  
Level Density

The (n,γ) reaction productions of 35S, 42Ar, 45Ca, 63Ni, 85Kr, 89Sr, 113mCd, 121m,123Sn, 147Pm, 151Sm, 152,154,155Eu, 170,171Tm, 185,188W, 194Os, 204Tl, 210Po, 227Ac, 242,244Cm radioisotopes for using in nuclear battery via phenomenological and microscopic level density models

2019 ◽  
Vol 28 (08) ◽  
pp. 1950057 ◽  
Author(s):  
Ozan Artun
Keyword(s):  
Cross Section ◽  
Level Density ◽  
Nuclear Data ◽  
Microscopic Level ◽  
Level Density Models ◽  
Battery Technology ◽  
Reaction Processes ◽  
Nuclear Battery ◽  
Induced Reaction

Aims of this work are: (i) Investigation of the production of some radioisotopes that could be used in nuclear battery technology with neutron-induced reaction processes, (ii) Estimation of the cross-section curves of [Formula: see text] reactions for astrophysical processes in the energy region between 1[Formula: see text]eV and 1[Formula: see text]MeV, (iii) Determination of suitable level density models for the [Formula: see text] reaction processes. Additionally, the obtained results were compared with the experimental data and recommended data. Based on the calculated results, to eliminate lack of nuclear data in the literature, we recommend new experiments for some reaction processes to be performed by the experimenters. Moreover, for the [Formula: see text] reaction processes, suitable level density models were proposed.

Determination of Surface Charge and Interface Trap Densities in Naturally Oxidized n-Type Si wafers Using ae Surface Photovoltages

1987 ◽  
Vol 26 (Part 1, No. 2) ◽  
pp. 226-230 ◽  
Author(s):  
Hiromichi Shimizu ◽  
Kanji Kinameri ◽  
Noriaki Honma ◽  
Chusuke Munakata
Keyword(s):  
Surface Charge ◽  
Interface Trap
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