Mapping of Elemental and Phase Composition in Air-Oxidized Ti3SiC2

Advances in Science and Technology ◽

10.4028/www.scientific.net/ast.45.1091 ◽

2006 ◽

Vol 45 ◽

pp. 1091-1096

Author(s):

It Meng Low

Keyword(s):

Phase Composition ◽

Synchrotron Radiation ◽

Mass Spectroscopy ◽

Surface Composition ◽

Depth Profiling ◽

Oxidation Behaviour ◽

Surface Oxide ◽

Depth Profiles ◽

Synchrotron Radiation Diffraction ◽

Secondary Ion

The oxidation behaviour of Ti3SiC2 in air is not well understood due to mixed results reported in the literature. In this study, the surface composition depth-profiles of air-oxidized Ti3SiC2 have been investigated by synchrotron radiation diffraction (SRD) and secondary ion mass spectroscopy (SIMS) in the temperature range 500-1300°C. Anatase has been observed to form at ~600°C, rutile at ~750°C and tridymite at ~1100°C. Depth-profiling results by SIMS and SRD have revealed a distinct gradation in element and phase composition respectively within the surface oxide layers.

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Depth-Profiling of Phase Composition and Texture in Layered-Graded Al2O3- & Ti3SiC2-Based Systems Using X-Ray and Synchrotron Radiation Diffraction

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.224-226.505 ◽

2002 ◽

Vol 224-226 ◽

pp. 505-510 ◽

Cited By ~ 4

Author(s):

It Meng Low ◽

M. Singh ◽

P. Manurung ◽

E. Wren ◽

D.P. Sheppard ◽

...

Keyword(s):

Phase Composition ◽

Synchrotron Radiation ◽

Depth Profiling ◽

X Ray ◽

Synchrotron Radiation Diffraction

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Depth-profiling of phase composition and preferred orientation in a graded alumina/mullite/aluminium-titanate hybrid using X-ray and synchrotron radiation diffraction

Materials Research Bulletin ◽

10.1016/s0025-5408(02)00764-x ◽

2002 ◽

Vol 37 (7) ◽

pp. 1279-1291 ◽

Cited By ~ 9

Author(s):

M Singh ◽

I.M Low

Keyword(s):

Phase Composition ◽

Synchrotron Radiation ◽

Depth Profiling ◽

Preferred Orientation ◽

X Ray ◽

Aluminium Titanate ◽

Synchrotron Radiation Diffraction

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Carbon Enhancement of SiO[sub 2] Nucleation in Buried Oxide Synthesis Computer Simulations and Secondary Ion Mass Spectroscopy Depth Profiling

Journal of The Electrochemical Society ◽

10.1149/1.1362550 ◽

2001 ◽

Vol 148 (5) ◽

pp. F92 ◽

Cited By ~ 2

Author(s):

A. A. Efremov ◽

V. G. Litovchenko ◽

G. Ph. Romanova ◽

A. V. Sarikov ◽

C. Claeys

Keyword(s):

Computer Simulations ◽

Mass Spectroscopy ◽

Depth Profiling ◽

Secondary Ion Mass Spectroscopy ◽

Buried Oxide ◽

Secondary Ion

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Secondary ion mass spectroscopy depth profiles of heterojunction bipolar transistor emitter-base heterojunctions grown by low pressure OMVPE

Journal of Crystal Growth ◽

10.1016/0022-0248(88)90596-9 ◽

1988 ◽

Vol 93 (1-4) ◽

pp. 637-645 ◽

Cited By ~ 33

Author(s):

P.M. Enquist

Keyword(s):

Mass Spectroscopy ◽

Low Pressure ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Secondary Ion Mass Spectroscopy ◽

Depth Profiles ◽

Secondary Ion

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Secondary ion mass spectroscopy ultrashallow depth profiling for Si/Si1−xGex/Si heterojunction bipolar transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588463 ◽

1996 ◽

Vol 14 (1) ◽

pp. 287 ◽

Cited By ~ 5

Author(s):

D. Krüger

Keyword(s):

Mass Spectroscopy ◽

Heterojunction Bipolar Transistors ◽

Depth Profiling ◽

Bipolar Transistors ◽

Secondary Ion Mass Spectroscopy ◽

Secondary Ion

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Accurate in depth profiling of As and P shallow implants by secondary ion mass spectroscopy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1634957 ◽

2004 ◽

Vol 22 (1) ◽

pp. 341 ◽

Cited By ~ 3

Author(s):

E. de Chambost ◽

A. Merkulov ◽

M. Schuhmacher ◽

P. Peres

Keyword(s):

Mass Spectroscopy ◽

Depth Profiling ◽

Secondary Ion Mass Spectroscopy ◽

Secondary Ion

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Quantitative comparison between Auger electron spectroscopy and secondary ion mass spectroscopy depth profiles of a double layer structure of AlAs in GaAs using the mixing-roughness-information depth model

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1345899 ◽

2001 ◽

Vol 19 (4) ◽

pp. 1111-1115 ◽

Cited By ~ 15

Author(s):

S. Hofmann ◽

A. Rar ◽

D. W. Moon ◽

K. Yoshihara

Keyword(s):

Auger Electron Spectroscopy ◽

Mass Spectroscopy ◽

Electron Spectroscopy ◽

Auger Electron ◽

Layer Structure ◽

Quantitative Comparison ◽

Depth Profiles ◽

Double Layer Structure ◽

Information Depth ◽

Secondary Ion

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7384. Optimization of primary beam conditions for secondary ion mass spectroscopy depth profiling of shallow junctions in silicon using the Perkin-Elmer 6300

Vacuum ◽

10.1016/0042-207x(91)91191-p ◽

1991 ◽

Vol 42 (8-9) ◽

pp. 592

Keyword(s):

Mass Spectroscopy ◽

Depth Profiling ◽

Primary Beam ◽

Secondary Ion Mass Spectroscopy ◽

Shallow Junctions ◽

Secondary Ion

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Surface composition of poly(styrene-d8-styrene) random copolymers studied by static secondary ion mass spectroscopy

Macromolecules ◽

10.1021/ma00072a017 ◽

1993 ◽

Vol 26 (20) ◽

pp. 5400-5404 ◽

Cited By ~ 10

Author(s):

S. Affrossman ◽

M. Hartshorne ◽

R. Jerome ◽

H. Munro ◽

R. A. Pethrick ◽

...

Keyword(s):

Mass Spectroscopy ◽

Surface Composition ◽

Random Copolymers ◽

Secondary Ion Mass Spectroscopy ◽

Secondary Ion

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High-Throughput Screening of Si–Ni Flux for SiC Solution Growth Using a High-Temperature Laser Microscope Observation and Secondary Ion Mass Spectroscopy Depth Profiling

ACS Combinatorial Science ◽

10.1021/co400009z ◽

2013 ◽

Vol 15 (6) ◽

pp. 287-290 ◽

Cited By ~ 5

Author(s):

Shingo Maruyama ◽

Aomi Onuma ◽

Kazuhisa Kurashige ◽

Tomohisa Kato ◽

Hajime Okumura ◽

...

Keyword(s):

High Temperature ◽

Mass Spectroscopy ◽

High Throughput ◽

High Throughput Screening ◽

Depth Profiling ◽

Microscope Observation ◽

Solution Growth ◽

Secondary Ion Mass Spectroscopy ◽

Secondary Ion

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